Patent classifications
H01S5/1046
TECHNOLOGIES FOR A PHASE-LOCKED TERAHERTZ PLASMONIC LASER ARRAY WITH MICROCAVITIES
A plasmonic laser array device may comprise a first microcavity element having a first radiating end facet and a second radiating end facet opposite the first radiating end facet in a longitudinal direction of the device. The device may comprise a second microcavity element having a third radiating end facet and a fourth radiating end facet opposite the third radiating facet in the longitudinal direction. The device may comprise a first microcavity gap configured to separate the first microcavity element and the second microcavity element in the longitudinal direction. The device may comprise a bottom (e.g., metal) layer configured to underly the first microcavity element, the second microcavity element, and the first microcavity gap. The device may comprise an arrangement that places the first microcavity element and the second microcavity element into a phase-locked orientation for a phased-locked operation of the plasmonic laser array device.
Vehicle component with an accessory mounting feature and a method and tool for forming
A vehicle component, and a method and tool for forming the component are provided. First and second tools with first and second surfaces, respectively, are provided. The first tool is translated along a first axis towards the second tool such that the first and second surfaces cooperate to define a mold cavity configured to form an accessory mount feature with an aperture. The second surface is configured to form an integrated rib extending outwardly from an upper surface of the mount feature to a planar bearing surface surrounding the aperture with the planar bearing surface oriented at an acute angle relative to the upper surface. The first axis is substantially parallel to the upper surface.
LASER ON SILICON MADE WITH 2D MATERIAL GAIN MEDIUM
A laser structure includes a substrate and a first dielectric layer formed on the substrate. A multi-quantum well is formed on the first dielectric layer and has a plurality of alternating layers. The alternating layers include a dielectric layer having a sub-wavelength thickness and a monolayer of a two dimensional material.
HYBRID PHOTONIC PLASMONIC INTERCONNECTS (HYPPI) WITH INTRINSIC AND EXTRINSIC MODULATION OPTIONS
The Hybrid Photonic Plasmonic Interconnect (HyPPI) combines both low loss photonic signal propagation and passive routing with ultra-compact plasmonic devices. These optical interconnects therefore uniquely combine fast operational data-bandwidths (in hundreds of Gbps) for light manipulation with low optical attenuation losses by hybridizing low loss photonics with strong light-matter-interaction plasmonics to create, modulate, switch and detect light efficiently at the same time. Initial implementations were considered for on-chip photonic integration, but also promising for free space or fiber-based systems. In general two technical options exist, which distinguished by the method the electric-optic conversion is executed: the extrinsic modulation method consists of an continuous wave source such as an LED or laser operating at steady power output, and signal encoding is done via an electro-optic modulator downstream of the source in the interconnect. In contrast, in the intrinsic method, the optical source is directly amplitude modulated.
WAVEGUIDE EMBEDDED PLASMON LASER WITH MULTIPLEXING AND ELECTRICAL MODULATION
This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.
Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layer
A process for fabricating an optoelectronic device for emitting infrared radiation, including: i) producing a first stack containing a light source, and a first bonding sublayer made from a metal of interest chosen from gold, titanium and copper, ii) producing a second stack containing a GeSn-based active layer obtained by epitaxy at an epitaxy temperature (T.sub.epi), and a second bonding sublayer made from the metal of interest, iii) determining an assembly temperature (Tc) substantially between an ambient temperature (T.sub.amb) and the epitaxy temperature (T.sub.epi), such that a direct bonding energy per unit area of the metal of interest is higher than or equal to 0.5 J/m.sup.2; and iv) joining, by direct bonding, at the assembly temperature (Tc), the stacks.
Electro-Optical Apparatus
Embodiments described herein relate to methods and apparatus for generating electromagnetic radiation in an electro-optical apparatus. An electro-optical apparatus comprises a core region; a cladding region extending around the core region, and a first layer of a material extending along an interface between the core region and the cladding region, wherein the first layer is configured with a changing refractive index along at least a first direction; and a set of driving electrical contacts configured to apply a voltage in a second direction on the first layer, such that electrons in the first layer are accelerated between the set of driving electrical contacts to generate a surface polariton wave at the interface between the core region and the cladding region, wherein the surface polariton wave propagates in the first direction, and wherein a thickness of the first layer is less than an extinction length of the surface polariton wave in the material, and the first layer is positioned a distance less than or equal to the extinction length of the surface polariton from the interface between the core region and the cladding region.
NANOLASER BASED ON DEPTH-SUBWAVELENGTH GRAPHENE-DIELECTRIC HYPERBOLIC DISPERSIVE CAVITY
The disclosure provides a nanolaser based on a depth-subwavelength graphene-dielectric hyperbolic dispersive cavity, comprising a pumping light source and the depth-subwavelength graphene-dielectric hyperbolic dispersive cavity; wherein the depth-subwavelength graphene-dielectric hyperbolic dispersive cavity is a spherical or hemispherical hyperbolic dispersive microcavity formed by alternately wrapping a dielectric core with graphene layers and dielectric layers. Because the graphene plasmon has unique excellent performances, such as an electrical adjustability, a low intrinsic loss, a high optical field localization, and a continuously adjustable resonance frequency from mid-infrared to terahertz, compared with a common metal-dielectric hyperbolic dispersive characteristic, a graphene-dielectric hyperbolic dispersive metamaterial used by the disclosure not only may highly localize an energy of an electromagnetic wave in a more depth-subwavelength cavity, but also may reduce an ohmic loss and improve a quality factor.
Electro-optical apparatus
Embodiments described herein relate to methods and apparatus for generating electromagnetic radiation in an electro-optical apparatus. An electro-optical apparatus comprises a core region; a cladding region extending around the core region, and a first layer of a material extending along an interface between the core region and the cladding region, wherein the first layer is configured with a changing refractive index along at least a first direction; and a set of driving electrical contacts configured to apply a voltage in a second direction on the first layer, such that electrons in the first layer are accelerated between the set of driving electrical contacts to generate a surface polariton wave at the interface between the core region and the cladding region, wherein the surface polariton wave propagates in the first direction, and wherein a thickness of the first layer is less than an extinction length of the surface polariton wave in the material, and the first layer is positioned a distance less than or equal to the extinction length of the surface polariton from the interface between the core region and the cladding region.
Devices with semiconductor hyperbolic metamaterials
A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas, wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive.