Disclosed are a wavelength-selectable laser diode and an optical communication apparatus including the same. The wavelength-selectable laser diode includes a substrate, which includes a gain region, a tuning region spaced apart from the gain region, and a phase adjusting region between the tuning region and the gain region, a waveguide layer on the substrate, a clad layer on the waveguide layer, and gratings disposed on the substrate or the clad layer in the gain region and the tuning region.

A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.

A thermally tunable laser includes: a substrate; a laser resonator, wherein the laser resonator includes a gain section, and wherein the laser resonator includes a tuning section; a heating arrangement; a heat sink arrangement for dissipating a heat flow from the laser resonator to the heat sink arrangement; and a hole arrangement for influencing the heat flow from the laser resonator to the heat sink arrangement, wherein the hole arrangement is arranged between the substrate and the heat sink arrangement, wherein one or more holes of the hole arrangement include at least one hole being arranged within a horizontal range of the tuning section, so that a thermal resistance between the tuning section and the heat sink arrangement is increased.

A method or apparatus for narrowing the linewidth of a single mode laser is provided. The linewidth of a single mode laser is narrowed by injecting an optical feedback simultaneously into the first laser cavity mirror and the second laser cavity mirror of the single mode laser.

A laser device includes: a first reflecting unit; a second reflecting unit; a gain unit provided between the first reflecting unit and the second reflecting unit; a divider provided after the first reflecting unit and configured to divide laser light from the first reflecting unit into first light and second light; a first end portion positioned separately from the divider in a first direction, and positioned after the divider, the first end portion being configured to output, as output light, the first light or the first light that has been amplified; and a second end portion positioned separately from the divider in a second direction different from the first direction, the second end portion being configured to output the second light.

A non-etched gap is introduced along the length of an integrated Bragg grating with etched grooves such that the coupling coefficient, K, of the grating is reduced by the non-etched gap. In this way, multiple grating K values may be defined within a photonic integrated circuit using a single lithography and etch step. Additionally, the non-etched gap width may be varied along the length of a single grating to implement a chirped grating.

The optical module includes: a housing having first and second end walls and a pair of side walls; a semiconductor laser element; a first TEC; a wavelength locker unit including an optical splitting component and an etalon filter; and a second TEC. The second end wall is provided with a feedthrough. The pair of side walls is not provided with an external connection terminal. The second TEC is disposed between the first TEC and the second end wall and has: a first substrate thermally coupled to a bottom surface of the housing; a second substrate thermally coupled to the etalon filter; and a heat transfer part that transfers heat. The optical module further includes a wiring pattern that is arranged side by side with the heat transfer part and that supplies electric power to the first TEC from the feedthrough.

A tunable laser for tuning a lasing mode based on light beams travelling through at least one block of channel waveguides with at least two tunable combs, includes: a frequency selective optical multiplexer comprising a first terminal for receiving/transmitting light, at least one block of channel waveguides, each channel waveguide having a reflectively coated first tail and a second tail, and an optical coupling element optically coupling the first terminal with the second tails of the channel waveguides of the at least one block of channel waveguides, each of the channel waveguides having a different length; a gain element generating a broad spectrum of light, the gain element coupling the first terminal of the frequency selective optical multiplexer with a reflective element.

The invention provides a dynamically swept tunable laser system and method for measuring sensor characteristics obtained from an array of optical sensors comprising means for dividing the total wavelength sweep of the laser into different regions in any particular order where each region contains single or multiple contiguous sweep segments and where each sweep segment is referenced by a start and a stop reference and can have different lengths compared to the other sweep segments. The sensor characteristics are determined from each region swept by the tunable laser. The invention provides for the tunable laser to be adapted to operate in a quasi-continuous mode to select segments in any order. The relative sweep rates of regions can be changed such that some regions can be swept more times than other regions.

In the method for controlling a tunable wavelength laser, information designating an oscillation wavelength is inputted. A driving condition for causing laser oscillation at a first wavelength is acquired from a memory. A control value of wavelength characteristics of the etalon and a difference between the first wavelength and a second wavelength are referred to, and a control value of wavelength characteristics of the etalon for causing laser oscillation at the second wavelength is calculated. The control value of wavelength characteristics of the etalon are assigned to the tunable wavelength laser, and a wavelength is controlled so that a wavelength sensing result becomes a first target value. Information indicating a wavelength shift amount from the designated oscillation wavelength is inputted. The wavelength sensing result is calculated as a second target value. The wavelength is controlled so that the wavelength sensing result becomes the second target value.