Disclosed is a surface etched grating semiconductor laser with periodic pumping structure. The structure includes a lower doped dielectric layer, a multiple quantum well active layer, a ridge-shaped doped dielectric layer, periodic grating grooves formed on the ridge-shaped doped dielectric layer and a top electrical contact layer forming ohmic electrical contact with electrical contact regions between the grating grooves. Carriers are injected through the periodic electrical contact layer, flow through the electrical contact regions, spread laterally when reaching the bottom of the grating grooves, and then continue to spread to the multiple quantum well active layer. In a case of uniform distribution, a laser based on refractive index modulation is realized. In a case of non-uniform distribution, a laser with mixed modulation is realized by introducing additional gain modulation.

A Bragg grating includes a lower waveguide layer, a middle waveguide layer disposed on the lower waveguide layer, an upper waveguide structure disposed on the middle waveguide layer opposite to the lower waveguide layer, and a buried layer. The upper waveguide structure includes upper waveguide elements that are arranged on a surface of the middle waveguide layer, and that are spaced apart from one another by cavities. The buried layer fills the cavity. The middle waveguide layer has a refractive index lower than that of each of the lower waveguide layer and the upper waveguide elements. The lower waveguide layer has a doping type the same as that of the middle waveguide layer. A method for manufacturing the Bragg grating is also provided.

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

A semiconductor optical element includes a first cladding layer; a second cladding layer formed in a ridge shape; and optical confinement layer interposed between the first cladding layer and the second cladding layer to propagate light, wherein the second cladding layer is configured with a ridge bottom layer; a ridge intermediate layer; and a ridge top layer in this order from the optical confinement layer, and the ridge intermediate layer is formed wider in cross section perpendicular to the optical axis—the light propagating direction in optical confinement layer—than the ridge bottom layer and the ridge top layer.

The invention relates to a method for fabricating a semiconductor structure. The method comprises fabricating a photonic crystal structure of a first material, in particular a first semiconductor material and selectively removing the first material within a predefined part of the photonic crystal structure. The method further comprises replacing the first material within the predefined part of the photonic crystal structure with one or more second materials by selective epitaxy. The one or more second materials may be in particular semiconductor materials. The invention further relates to devices obtainable by such a method.

An on-chip integrated semiconductor laser structure and a method for preparing the same. The structure includes: an epitaxial structure including a first N contact layer, a first N confinement layer, a first active region, a first P confinement layer, a first P contact layer, an isolation layer, a second N contact layer, a second N confinement layer, a second active region, a second P confinement layer, and a second P contact layer sequentially deposited on a substrate; a first waveguide and a second waveguide; a first optical grating and a second optical grating; and current injection windows.

A method for manufacturing an optical device includes providing a carrier waver, provide a first substrate having a first surface region, and forming a first gallium and nitrogen containing epitaxial material overlying the first surface region. The first epitaxial material includes a first release material overlying the first substrate. The method also includes patterning the first epitaxial material to form a plurality of first dice arranged in an array; forming a first interface region overlying the first epitaxial material; bonding the first interface region of at least a fraction of the plurality of first dice to the carrier wafer to form bonded structures; releasing the bonded structures to transfer a first plurality of dice to the carrier wafer, the first plurality of dice transferred to the carrier wafer forming mesa regions on the carrier wafer; and forming an optical waveguide in each of the mesa regions, the optical waveguide configured as a cavity to form a laser diode of the electromagnetic radiation.

A PIC has first, second and third elements fabricated on a common substrate. The first element includes a structure supporting efficient coupling of one or more free-space optical modes of incident light into one or more waveguide guided optical modes. The second element includes an on-chip interferometer having an input optically coupled to the waveguide guided optical modes; one or more arms; one or more outputs; and a phase tuner configured to change optical path length in one or more of the arms. The third element includes one or more light detecting structures optically coupled to the one or more outputs of the second element, such that variation in optical power in the one or more outputs is detected, allowing an assessment of coherence characterizing the light incident on the first element of the PIC to be provided.

A QCL may include a substrate, an emitting facet, and semiconductor layers adjacent the substrate and defining an active region. The active region may have a longitudinal axis canted at an oblique angle to the emitting facet of the substrate. The QCL may include an optical grating being adjacent the active region and configured to emit one of a CW laser output or a pulsed laser output through the emitting facet of substrate.

Disclosed is a method for producing a laminate of a resin film and a perovskite film, including compressing a preliminary product having a resin film, a perovskite film and an inorganic support in that order with heating, followed by separating the laminate of a resin film and a perovskite film from the inorganic support. According to the production method, a perovskite film having a fine indented pattern such as a diffraction grating structure can be produced in a simplified manner