A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.

A beam positioner can be broadly characterized as including a first acousto-optic (AO) deflector (AOD) operative to diffract an incident beam of linearly polarized laser light, wherein the first AOD has a first diffraction axis and wherein the first AOD is oriented such that the first diffraction axis has a predetermined spatial relationship with the plane of polarization of the linearly polarized laser light. The beam positioner can include at least one phase-shifting reflector arranged within a beam path along which light is propagatable from the first AOD. The at least one phase-shifting reflector can be configured and oriented to rotate the plane of polarization of light diffracted by the first AOD.

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.

A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.

A beam positioner for deflecting a beam path, along which a diffracted beam of linearly polarized laser light is propagatable, within a two-dimensional scan field, the beam positioner includes a first acousto-optic deflectors (AOD) to deflect the beam path within a first one-dimensional scan field extending along a first axis of the two-dimensional scan field, a second AOD to deflect the beam path within a second one-dimensional scan field extending along a second axis of the two-dimensional scan field, a phase retarder arranged between the first AOD and the second AOD and within the beam path along which the beam of laser light is propagatable from the first AOD and a mirror arranged between the first AOD and the second AOD and within the beam path along which the beam of laser light is propagatable from the first AOD.

A beam positioner can be broadly characterized as including a first acousto-optic (AO) deflector (AOD) operative to diffract an incident beam of linearly polarized laser light, wherein the first AOD has a first diffraction axis and wherein the first AOD is oriented such that the first diffraction axis has a predetermined spatial relationship with the plane of polarization of the linearly polarized laser light. The beam positioner can include at least one phase-shifting reflector arranged within a beam path along which light is propagatable from the first AOD. The at least one phase-shifting reflector can be configured and oriented to rotate the plane of polarization of light diffracted by the first AOD.

A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InOaAs. The CGH is composed of AlGaAs.

The subject invention includes a semiconductor laser with the laser having a DBR mirror on a substrate, a quantum well on the DBR mirror, and an interior CGH with a back propagated output for emitting a large sized Gaussian and encircling high energy. The DBR mirror has a plurality of GaAs/AlGaAs layers, while the quantum well is composed of AlGaAs/InGaAs. The CGH is composed of AlGaAs.

A laser comprising a laser cavity formed by a first optical reflector, a gain region, a second optical reflector having a plurality of reflection peaks, and at least one optically active region. The first mirror may be a DBR or comb mirror and the second mirror may be a comb mirror. The spectral reflectance of the second optical reflector is adjusted at least partially based on an electric signal received form the optically active region such that only one reflection peak is aligned with a cavity mode formed by the first and second reflector.