H01S5/18302

SEMICONDUCTOR LASER DEVICE

Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.

Addressable crossed line projector for depth camera assembly

A projector for illuminating a target area is presented. The projector includes an array of emitters positioned on a substrate according to a distribution. Each emitter in the array of emitters has a non-circular emission area. Operation of at least a portion of the array of emitters is controlled based in part on emission instructions to emit light. The light from the projector is configured to illuminate the target area. The projector can be part of a depth camera assembly for depth sensing of a local area, or part of an eye tracker for determining a gaze direction for an eye.

VCSEL WITH INCREASED WAVELENGTH DEPENDENCE ON DRIVING CURRENT
20230020718 · 2023-01-19 ·

A Vertical Cavity Surface Emitting Laser VCSEL, includes an optical resonator with a first reflector, a second reflector, and an active region for laser emission arranged between the first reflector and the second reflector and remaining regions outside of the active region, and an electrical contact arrangement configured to provide an electrical drive current to electrically pump the optical resonator. The optical resonator further comprises a loss layer introducing optical and/or electrical losses to increase wavelength shift of the laser emission when varying the drive current. If the loss layer is an optical loss layer, the optical losses introduced by the loss layer are higher than the sum of the optical losses in the remaining regions. If the loss layer is an electrical loss layer, the electrical losses introduced by the loss layer are higher by a factor of at least 5 than the electrical losses in the remaining regions.

Light-emitting device, optical device, and measurement device

A light-emitting device includes a laser unit; and a first capacitive element and a second capacitive element that supply a driving electric current to the laser unit; wherein the first capacitive element has smaller equivalent series inductance than the second capacitive element, and the second capacitive element has a larger capacity and a smaller mount area than the first capacitive element.

VISIBLE LIGHT-EMITTING SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME

A semiconductor laser light-emitting structure includes a semiconductor laser light-emitting structure having a vertical-cavity surface-emitting laser structure and configured to emit light having a first wavelength, and a wavelength converter including a metasurface and monolithically formed with the semiconductor laser light-emitting structure on a light output side of the semiconductor laser light-emitting structure, wherein the metasurface is configured to non-linearly convert the light having the first wavelength into light having a second wavelength.

SUBSTRATE DESIGNS FOR TIME-OF-FLIGHT CAMERA PROJECTORS WITH LOW THERMAL RESISTANCE AND LOW PARASITIC INDUCTANCE
20220385039 · 2022-12-01 ·

A circuit (e.g., for use in a time-of-flight camera projector module) may include a top metal layer having an anode and a cathode, one or more capacitors connected to the anode, a vertical-cavity surface-emitting laser connected to the anode and the cathode, and a driver connected to the cathode. The circuit may further include a bottom metal layer connected to ground and arranged below the top metal layer, and a dielectric layer separating the top metal layer and the bottom metal layer. In some implementations, the dielectric layer has a thickness under sixty micrometers and a thermal resistance under fifteen degrees Celsius per watt. Accordingly, a current loop flowing vertically across the dielectric layer has a low self-inductance based on the thickness of the dielectric layer and the bottom metal layer is arranged to dissipate heat generated by the current loop flowing vertically across the dielectric layer.

Radiation tolerant electro-optical devices for communication in space
11515629 · 2022-11-29 · ·

There are described methods and devices for intra-spacecraft communication in space, the electro-optical device having at least one of transmitting capabilities for converting a first electrical signal into a first optical signal and outputting the first optical signal within a spacecraft, and receiving capabilities for receiving a second optical signal within the spacecraft and converting the second optical signal into a second electrical signal, the electro-optical device having at least one integrated circuit dedicated to at least one of the transmitting capabilities and the receiving capabilities, the at least one integrated circuit configured for operating in an analog mode where configuration voltages for the integrated circuit are provided by analog voltage settings unaffected by radiation.

HIGH SPEED SPATIAL LIGHT MODULATOR
20230053851 · 2023-02-23 ·

A high speed spatial light modulators are described. In one non-limiting example, an optical phased array structure comprises a vertical cavity surface-emitting laser (VCSEL) that provides a light beam and a phase delay unit that includes a bi-layer photonic crystal slab. The bi-layer photonic crystal slab (PCS) is attached to the VCSEL and comprises two silicon PCS layers separated by a dielectric layer. The optical phased array structure is configured to control a direction of the light beam by a voltage applied to the phase delay unit. By incorporating a dispersive layer (e.g. graphene), the absorption of the structure can be modulated and accordingly the reflection of the surface can be modulated as well.

OPTICAL INTEGRATED CIRCUIT SENSOR PACKAGE USING A STACKED CONFIGURATION FOR THE SENSOR DIE AND THE EMITTER DIE
20220368100 · 2022-11-17 · ·

An optical sensor package includes an emitter die mounted to an upper surface of a package substrate. A sensor die is mounted to the upper surface of the package substrate using a film on die (FOD) adhesive layer that extends over the upper surface and encapsulates the emitter die. The sensor die is positioned in a stacked relationship with respect to the emitter die such that a light channel region which extends through the sensor die is optically aligned with the emitter die. Light emitted by the emitter die passes through the light channel region of the sensor die. The emitter die and the sensor die are each electrically coupled to the package substrate.

Optical Fiber Illumination by a Set of Light Emitters

An electronic device includes a substrate, a set of light emitters on the substrate and arranged in a plurality of axisymmetric light emitter groups, a set of lenses including a different lens disposed over each axisymmetric light emitter group of the plurality of axisymmetric light emitter groups, and a set of optical fibers. At least one optical fiber in the set of optical fibers has a proximal end, a distal end, and a bend between the proximal end and the distal end. The proximal end is positioned to receive light, through a respective lens in the set of lenses, from the light emitters of a respective axisymmetric light emitter group in the plurality of axisymmetric light emitter groups.