A laser structure comprising a first photonic crystal surface emitting laser (PCSEL), a second PCSEL, and a coupling region that extends between the first PCSEL and the second PCSEL along a longitudinal axis and that is electrically controllable so as to be capable of coherently coupling the first PCSEL to the second PCSEL. Each PCSEL include an active layer, a photonic crystal, and a two-dimensional periodic array distributed in an array plane parallel to the longitudinal axis within the photonic crystal where the two-dimensional periodic array is formed of regions having a refractive index that is different to the surrounding photonic crystal.

A semiconductor light-emitting element has a distributed Bragg reflector that is grown by depositing an InAlN layer and a GaN layer a plurality of times in that order on a semipolar plane of a semiconductor substrate, and a semiconductor structure layer that is formed on the distributed Bragg reflector and includes an active layer. The InAlN layer has a plurality of projections on an interface with the GaN layer, and the InAlN layer has a low In region which is formed at the top of each of the plurality of projections and which is lower in In composition than the remaining region.

A laser device for generating an optical wave including at least two frequencies, such laser device including: a first element including a gain region, a second mirror, distinct from the first element, and arranged so as to form with a first mirror an optical cavity including the gain region; means for pumping the gain region so as to generate the optical wave; means for shaping the light intensity of the optical wave arranged for selecting at least two transverse modes of the optical wave; and means for shaping the longitudinal and/or transversal phase profile of the optical wave and arranged for adjusting at least two transverse modes of the optical wave.

A two-dimensional photonic crystal surface emitting laser capable of improving characteristics of light to be emitted, particularly optical output , which includes: a two-dimensional photonic crystal including a plate-shaped base member and modified refractive index regions where the modified refractive index regions have a refractive index different from that of the plate-shaped base member and are two-dimensionally and periodically arranged in the base member; an active layer provided on one side of the two-dimensional photonic crystal; and a first electrode and a second electrode provided sandwiching the two-dimensional photonic crystal and the active layer for supplying current to the active layer, where the second electrode covers a region equal to or wider than the first electrode, wherein the first electrode is formed so as to supply the current to the active layer with a different density depending on the in-plane position on the first electrode.

Embodiments described herein provide a layered structure that comprises a substrate that includes a first porous multilayer of a first porosity, an active quantum well capping layer epitaxially grown over the first porous multilayer, and a second porous multilayer of the first porosity over the active quantum well capping layer, where the second porous multilayer aligns with the first porous multilayer.

Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

A grating reflector. The grating reflector includes a mesh structure defining a mesh plane and having a thickness normal thereto. The mesh structure includes parallel bars and parallel crossbars, which extend along a direction orthogonal to the bars. The bars and crossbars define a 2D grid of elongated holes, each extending through the mesh structure perpendicular to the mesh plane. The holes are elongated along a direction parallel to the bars and have a substantially rectangular shape with rounded corners. The 2D grid is defined by a cross-shaped unit cell having a bar section and an intersecting crossbar section. The grating reflector has a reflectivity in a bandwidth around a center wavelength higher than 0.99. A ratio between the unit cell volume and the center wavelength in the mesh material cubed is between 1.35 and 1.55.

An electrically pumped photonic-crystal surface-emitting lasers with optical detector comprises plurality of air holes, by the variation of position and size proportion form a photonic crystal having main structure and sub structure, and produces an optical detection signal by light guiding proportion of the light guiding tunnel, further have power proportion of the laser by reading the strength of the optical detection signal, so the automatic power control circuit can feedback the power proportion for controlling the surface-emitting laser.

Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.