A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and an electrode disposed at an opposite side to the substrate of the laminated structure, wherein the columnar parts have a light emitting layer, the columnar parts are disposed between the electrode and the substrate, light generated in the light emitting layer propagates through the plurality of columnar parts to cause laser oscillation, and the electrode is provided with a hole.

A VCSEL device includes a first electrical contact, a substrate, a second electrical contact, and an optical resonator arranged on a first side of the substrate. The optical resonator includes a first reflecting structure comprising a first distributed Bragg reflector, a second reflecting structure comprising a second distributed Bragg reflector, an active layer arranged between the first and second reflecting structures, and a guiding structure. The guiding structure is configured to define a first relative intensity maximum of an intensity distribution within the active layer at a first lateral position such that a first light emitting area is provided, to define at least a second relative intensity maximum of the intensity distribution within the active layer at a second lateral position such that a second light emitting area is provided, and to reduce an intensity in between the at least two light-emitting areas during operation.

A method of making a Group III nitride material that includes: providing a substrate; patterning a template on the substrate; depositing a layer of a material comprising aluminum, gallium and nitrogen on the substrate at a temperature; annealing the layer comprising aluminum, gallium and nitrogen; epitaxially growing Distributed Bragg Reflectors to form a structure on the substrate that comprises microcavities; and etching micropillars in the structure for at least 30 seconds with a heated basic solution is described.

A method of incorporating a control structure within a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming an active region over the first mirror, forming a spacer on a surface of the active region, forming a control structure on a surface of the spacer, and forming a second mirror over the control structure. The active region and the spacer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence. The second mirror is formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The control structure is formed using a chemical etching process during a transition period between the MBE phase and the MOCVD phase of the multiphase growth sequence.

Several VCSEL devices for long wavelength applications in wavelength range of 1200-1600 nm are described. These devices include an active region between a semiconductor DBR on a GaAs wafer and a dielectric DBR regrown on the active region. The active region includes multi-quantum layers (MQLs) confined between the active n-InP and p-InAlAs layers and a tunnel junction layer above the MQLs. The semiconductor DBR is fused to the bottom of the active region by a wafer bonding process. The design simplifies integrating the reflectors and the active region stack by having only one wafer bonding followed by regrowth of the other layers including the dielectric DBR. An air gap is fabricated either in an n-InP layer of the active region or in an air gap spacer layer on top of the semiconductor DBR. The air gap enhances optical confinement of the VCSEL. The air gap may also contain a grating.

Provided is a back side emitting light source array device and an electronic apparatus, the back side emitting light source array device includes a substrate, a distributed Bragg reflector (DBR) provided on a first surface of the substrate, a plurality of gain layers which are provided on the DBR, the plurality of gain layers being spaced apart from one another, and each of the plurality of gain layers being configured to individually generate light, and a nanostructure reflector provided on the plurality of gain layers opposite to the DBR, and including a plurality of nanostructures having a sub-wavelength shape dimension, wherein a reflectivity of the DBR is less than a reflectivity of the nanostructure reflector such that the light generated is emitted through the substrate.

A laser device is provided for generating a helical-shaped optical wave and includes: (i) a gain region located between one first end defined by a first mirror and a second end defined by an exit region, (ii) a second mirror arranged so as to form with the first mirror an optical cavity including the gain region and a gap between the exit region and the second mirror, (iii) apparatus for pumping the gain region so as to generate the optical wave, wherein the laser device further includes at least one apparatus for shaping the light intensity and/or phase profiles of the optical wave and arranged for selecting at least one rotary-symmetrical transverse mode of the optical wave, the rotary-symmetrical transverse mode being chosen between those with a radial index equal to zero and with an azimuthal index being an integer with a module higher or equal to 1.

A light emitter includes a substrate, a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of emitting light when current is injected into the light emitting layer, and a third semiconductor layer provided between the substrate and the first semiconductor layer and having the second conductivity type, in which the first semiconductor layer is provided between the third semiconductor layer and the light emitting layer, and the third semiconductor layer has a protruding/recessed structure.

An optoelectronic semiconductor component comprises a first resonator mirror, an active region suitable for generating radiation, and a second resonator mirror, which are arranged one above another in each case along a first direction. The optoelectronic semiconductor component furthermore comprises a refractive index modulation layer within an optical resonator between the first resonator mirror and the second resonator mirror. The refractive index modulation layer comprises first regions of a first material having a first refractive index and also second regions of a second material having a second refractive index, wherein the first regions are arranged directly adjacent to the second regions in a plane perpendicular to the first direction.

A surface light-emission type semiconductor light-emitting device includes a first semiconductor layer; a light-emitting layer provided on the first semiconductor layer; a second semiconductor layer provided on the light-emitting layer; an uneven structure provided on the second semiconductor layer, the uneven structure including a protrusion and a recess next to the protrusion; a first metal layer covering the uneven structure; and a second metal layer provided between the uneven structure and the first metal layer. The second metal layer is provided on one of a bottom surface of the recess, an upper surface of the protrusion, or a side surface of the protrusion. The second metal layer has a reflectance for light radiated from the light-emitting layer, which is less than a reflectance of the first metal layer for the light.