A surface emitting laser includes a lower reflector layer, an active layer , an upper reflector layer , and a wiring. The lower reflector layer, the active layer, and the upper reflector layer form a mesa, a terrace, and a connecting portion. A first groove is provided between the mesa and the terrace. The connecting portion connects the mesa and the terrace, and extends in a direction inclined from <011> direction of the substrate. A high-resistance region is formed in the terrace, in the connecting portion, and in a peripheral portion of the mesa. The wiring is provided on top surfaces of the terrace, the connecting portion, and the mesa. The mesa includes an oxide region extending from a side surface of the mesa and a current confinement structure including an aperture surrounded by the oxide region.

There are provided a surface emission laser 10, a surface emission laser array in which the surface emission laser 10 is arrayed two-dimensionally, and a surface emission laser manufacturing method that enable efficient injection of a current to an active layer 200b, while suppressing deterioration of the crystallinity of layers stacked above a contact area.

The present technology provides a surface emission laser 10 including a substrate 100, and a mesa structure 200 formed on the substrate 100, in which the mesa structure 200 includes at least a part of a first multilayer film reflector 200a stacked on the substrate 100, an active layer 200b stacked on the first multilayer film reflector 200a, and a second multilayer film reflector 200c stacked on the active layer 200b, and an impurity area 800 is provided over a contact area CA that is adjacent to the mesa structure 200, and contacts an electrode 600, and a side wall section of a portion of the mesa structure 200 which portion includes the first multilayer film reflector 200a.

A surface emitting laser according to one embodiment of the present disclosure includes a mesa part including, in order, a first conductivity-type DBR layer, an active layer, a second conductivity-type DBR layer, and a second conductivity-type contact layer. The surface emitting laser further includes: a first conductivity-type contact layer provided in a region on the first conductivity-type DBR layer side in a positional relationship with respect to the mesa part; a first conductivity-type semiconductor layer that is disposed at a position opposed to the mesa part with the first conductivity-type contact layer interposed therebetween, and is in contact with the first conductivity-type contact layer, the first conductivity-type semiconductor layer having a lower impurity concentration than the first conductivity-type contact layer; a first electrode layer in contact with the first conductivity-type contact layer; and a second electrode layer in contact with the second conductivity-type contact layer.

A light-emitting device according to an embodiment of the present disclosure includes: a semiconductor stack in which a first light reflection layer configured by an arsenic-based semiconductor layer including carbon as an impurity, an active layer, and a second light reflection layer are stacked; a first buffer layer provided on the first light reflection layer side of the semiconductor stack, having one face that faces the semiconductor stack and another face that is on an opposite side of the one face, and configured by a phosphorus-based semiconductor layer; and a second buffer layer provided at least between the first light reflection layer and the first buffer layer, and configured by an arsenic-based semiconductor layer including zinc or magnesium as an impurity.

Provided is a vertical cavity surface emitting laser diode (VCSEL) with a small divergence angle. The VCSEL includes a multi-layer structure on a substrate. The multi-layer structure includes an active region and current confinement layers. Each of the current confinement layers has an optical aperture (OA). When the area of the OA of the current confinement layer outside the active region is larger than the areas of the OAs of the current confinement layers inside the active region, such that the VCSEL has a small divergence angle in the short pulse mode.

A detection apparatus includes a light emitting unit including a first light emitting region that has at least one light emitting element and radiates light to a first radiation region and a second light emitting region that has at least one light emitting element and radiates light to a second radiation region, a drive unit that drives the light emitting unit, and a detection unit that detects an object based on a time until light radiated from the light emitting unit is reflected by the object and is received, in which the first radiation region is positioned outside with respect to the second radiation region, and an amount of light radiated from the first light emitting region is greater than an amount of light radiated from the second light emitting region.

A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

A method of forming a VCSEL device cavity using a multiphase growth sequence includes forming a first mirror over a substrate, forming a tunnel junction over the first mirror, forming an oxidation aperture (OA) layer over the tunnel junction, forming a p-doped layer over the OA layer, forming an active region over the p-doped layer, forming a second mirror over the active region, and forming a contact layer over the second mirror. The first mirror, the tunnel junction, the OA layer, and the p-doped layer are formed using a metal-organic chemical vapor deposition (MOCVD) process during an MOCVD phase of the multiphase growth sequence. The active region, the second mirror, and the contact layer are formed using a molecular beam epitaxy (MBE) process during an MBE phase of the multiphase growth sequence.

[Object] An object of the present technology is to provide a light-emitting element array capable of preventing a light-emitting element from being damaged and a method of producing the light-emitting element array.

[Solving Means] A light-emitting element array according to the present technology includes: a plurality of light-emitting elements two-dimensionally arranged on a light-emitting element surface of the light-emitting element array, each of the plurality of light-emitting elements being a vertical cavity surface emitting laser and being formed in a mesa shape surrounded by a recessed portion formed in the light-emitting element surface, an inclined surface being formed on an outer periphery of a light-emitting element group including the plurality of light-emitting elements, a depth of the recessed portion from the light-emitting element surface gradually increasing as away from the light-emitting element group.

Provided is a surface emitting laser apparatus capable of improving the yield.

The present technology includes: a stacked structure having at least one light emission unit including a first oxidized constriction layer and an electrode unit including a second oxidized constriction layer at different positions in an in-plane direction; and a conductive layer that makes the light emission unit and the electrode unit conductive with each other, in which the conductive layer includes a first portion covering a region between the light emission unit and the electrode unit, a second portion covering a near half part of the electrode unit, the near half part being relatively close to the light emission unit, and a third portion covering a far half part of the electrode unit, the far half part being relatively far from the light emission unit, in the stacked structure, and a degassing unit is provided in the first portion and/or the second portion and the third portion.