A method of forming an optical aperture of a vertical cavity surface emitting laser includes the steps of providing a layer stack of semiconductor layers, the semiconductor layers including an intermediate layer comprising a semiconductor material suitable to be oxidized and oxidizing the intermediate layer to an oxidation width so as to form an oxidized outer region and a non-oxidized central region in the intermediate layer. The method also includes removing at least a part of the oxidized outer region so as to form a gap where the oxidized outer region or the part of the oxidized outer region has been removed, depositing an electrically non-conducting material on walls of the gap with a thickness smaller than a thickness of the gap, and filling a remaining void of the gap with a further material.

A vertical cavity surface emitting laser includes a first distributed Bragg reflector, an active layer, and a second distributed Bragg reflector. The first distributed Bragg reflector, the active layer and the second distributed Bragg reflector are arranged in sequence in the direction of a first axis. The second distributed Bragg reflector includes a semiconductor region and a high resistance region. The high resistance region has an electrical resistance higher than the electrical resistance of the semiconductor region. The first axis passes through the semiconductor region. The high resistance region surrounds the semiconductor region. In a cross section including the first axis, the high resistance region has an inner edge extending in a direction inclined with respect to the first axis such that an inner diameter of the high resistance region increases as a distance from the active layer increases in the direction of the first axis.

Systems and methods disclosed herein include a vertical cavity surface emitting laser (VCSEL) device that includes an anode, a cathode, and one or more curved apertures located in an epitaxial layer between the anode and the cathode, each of the one or more curved apertures having an aperture edge and one or more oxidation bridges crossing the curved aperture that allow current to flow inside the curved aperture, in which when a current signal is applied to the VCSEL, current flow between the anode and the cathode is distributed along the aperture edge of the one or more curved apertures.

A semiconductor light-emitting element having a structure in which a substrate, a first reflector, a resonator cavity including an active layer, a second reflector and a transparent conductive film are stacked in this sequence, the semiconductor light-emitting element comprising: a first current constriction portion configured with an oxidation constriction layer; and a second current constriction portion configured with an insulation film, which is formed on an upper face of the second reflector and has an opening, and a contact portion between the transparent conductive film and a semiconductor layer with which the transparent conductive film is in contact, wherein a width d2 of the second current constriction portion is smaller than a width d1 of the first current constriction portion.

A semiconductor light-emitting element having a structure in which a substrate, a first reflector, a resonator cavity including an active layer, a second reflector and a tunnel junction portion are stacked in this sequence, comprising: a first current constriction portion configured with an oxidation constriction layer; and a second current constriction portion including the tunnel junction portion, wherein a width d2 of the second current constriction portion is smaller than a width d1 of the first current constriction portion.

A light source device in which a plurality of semiconductor light-emitting elements are disposed, each of the plurality of semiconductor light-emitting elements being configured with a first reflector, a resonator cavity including an active layer, and a second reflector which are stacked in this sequence on a semiconductor substrate, wherein in each of the semiconductor light-emitting elements, an electric contact region for supplying carriers to the active layer is disposed on a surface of the second reflector on an opposite side thereof to the active layer, and wherein the plurality of semiconductor light-emitting elements include a first semiconductor light-emitting element of which shape of the contact region is a first shape, and a second semiconductor light-emitting element of which shape of the contact region is a second shape which is different from the first shape.

In one example, a vertical cavity surface emitting laser (VCSEL) may include an active region to produce light at a wavelength, an emission surface to emit the light at the wavelength, a first oxide region spaced apart from the active region by a distance of at least a half-wavelength of the wavelength, a first oxide aperture in the first oxide region, a second oxide region between the first oxide region and the second oxide region, and a second oxide aperture in the second oxide region. The emitted light may have a divergence angle that is based on the respective positions and thicknesses of the first oxide region and the second oxide region.

A light emitting device according to an embodiment of the present disclosure includes: a semi-insulating substrate; a semiconductor layer; a semiconductor stacked body; a buried layer; and a non-continuous lattice plane. The semi-insulating substrate has a first surface and a second surface that are opposed to each other. The semiconductor layer is stacked on the first surface of the semi-insulating substrate. The semiconductor layer has electrical conductivity. The semiconductor stacked body is stacked above the first surface of the semi-insulating substrate with the semiconductor layer interposed in between. The semiconductor stacked body has a light emitting region and includes a ridge section on the semi-insulating substrate side. The light emitting region is configured to emit laser light. The buried layer is provided around the ridge section of the semiconductor stacked body. The non-continuous lattice plane is provided between the semi-insulating substrate and the semiconductor stacked body.

A semiconductor component for emitting light includes a main body that comprises at least one mesa body. The mesa body has an emission region for emitting the light. The emission region is assigned a first mirror portion, a second mirror portion, and an active portion arranged between the two mirror portions and serving to produce the light. The semiconductor component further includes electrical contacts for feeding electrical energy into the active portion, with at least one stress element that is attached to a surface of the main body. The stress element is configured to generate in the main body a material stress which has an effect on one or more polarization properties of the emitted light.

A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate, a base on which the substrate is disposed, a holding member that holds the substrate at an angle set in advance with respect to the base, a temperature control unit disposed parallel to the substrate to adjust a temperature of the substrate, and a shaping optical system held against the substrate to shape a luminous flux emitted from the semiconductor multilayer structure.