[Object] To provide a vertical cavity surface emitting laser element that has low thermal resistance and is capable of operating at high temperature, a vertical cavity surface emitting laser element array, a vertical cavity surface emitting laser module, and a method of producing a vertical cavity surface emitting laser element. [Solving Means] A vertical cavity surface emitting laser element (100) according to the present technology includes: a first substrate (110); a second substrate (120); a first DBR layer (131); and a second DBR layer (132). The first substrate (110) is formed of a first material and includes an active layer (115). The second substrate (120) is formed of a second material and is bonded to the first substrate (110), the second material causing light having a specific wavelength to be transmitted therethrough and being different from that of the first substrate (110). The first DBR layer (131) is provided on a side of the first substrate (110) opposite to the second substrate (120) and reflects the light having the wavelength. The second DBR layer (132) is provided on a side of the second substrate (120) opposite to the first substrate (110) and reflects the light having the wavelength.

A method of forming an optical aperture of a vertical cavity surface emitting laser includes the steps of providing a layer stack of semiconductor layers, the semiconductor layers including an intermediate layer comprising a semiconductor material suitable to be oxidized and oxidizing the intermediate layer to an oxidation width so as to form an oxidized outer region and a non-oxidized central region in the intermediate layer. The method also includes removing at least a part of the oxidized outer region so as to form a gap where the oxidized outer region or the part of the oxidized outer region has been removed, depositing an electrically non-conducting material on walls of the gap with a thickness smaller than a thickness of the gap, and filling a remaining void of the gap with a further material.

A vertical cavity surface emitting laser (VCSEL) may include a substrate layer, epitaxial layers on the substrate layer, and angled reflectors configured to receive an optical beam emitted toward a bottom surface of the VCSEL and redirect the optical beam through an exit window in a top surface of the VCSEL. In some implementations, the angled reflectors may be formed in the substrate layer. Additionally, or alternatively, the VCSEL may include molded optics, where the molded optics include the angled reflectors. In some implementations, the exit window may include an integrated lens.

In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate; a first mirror disposed over the substrate; a bonding layer disposed over the first mirror; and an active region disposed over the bonding layer. The substrate is a gallium arsenide (GaAs) substrate, and the active region is an indium phosphide (InP)-based active region.

A semiconductor light emitter includes a substrate, a semiconductor multilayer structure including a light emission unit that emits light in an oblique direction with respect to the substrate in an emission region in a longitudinal direction and a lateral direction orthogonal to the longitudinal direction, and a shaping optical system that shapes a luminous flux emitted from the light emission unit, in which a lens closest to the light emission unit in the shaping optical system is a cylindrical lens having positive power in the lateral direction, a front major plane of the cylindrical lens is parallel to the light emission unit and a generatrix direction of the cylindrical lens is parallel to the longitudinal direction, and the following conditional equation (1) is satisfied in a case where a distance from the light emission unit to a light incident surface of the cylindrical lens is D, a distance from the light incident surface to the front major plane of the cylindrical lens is HA, and a focal length of the cylindrical lens is f,

D<f−HA  (1).

A vertical cavity light-emitting element includes a substrate, a first multilayer film reflecting mirror, a semiconductor structure layer, an electrode, an electrode layer, and a second multilayer film reflecting mirror. The first multilayer film reflecting mirror is formed on the substrate. The semiconductor structure layer includes a nitride semiconductor. The nitride semiconductor includes a first semiconductor layer that is formed on the first multilayer film reflecting mirror and is a first conductivity type, a second semiconductor layer that is formed on the first semiconductor layer and is the first conductivity type, a light-emitting layer that is formed on the second semiconductor layer and is configured to expose a region including an outer edge of a top surface of the second semiconductor layer, and a third semiconductor layer that is formed on the light-emitting layer and is a second conductivity type opposite to the first conductivity type. The electrode is formed on the top surface of the second semiconductor layer. The electrode layer is electrically in contact with the third semiconductor layer in one region of a top surface of the third semiconductor layer. The second multilayer film reflecting mirror constitutes a resonator with the first multilayer film reflecting mirror. The second semiconductor layer has a larger resistance than the first semiconductor layer.

A semiconductor laser light-emitting structure includes a semiconductor laser light-emitting structure having a vertical-cavity surface-emitting laser structure and configured to emit light having a first wavelength, and a wavelength converter including a metasurface and monolithically formed with the semiconductor laser light-emitting structure on a light output side of the semiconductor laser light-emitting structure, wherein the metasurface is configured to non-linearly convert the light having the first wavelength into light having a second wavelength.

A closely spaced emitter array may include a first emitter comprising a first plurality of structures and a second emitter, adjacent to the first emitter, comprising a second plurality of structures. The first emitter and the second emitter may be configured in the closely spaced emitter array such that different types of structures between the first plurality of structures and the second plurality of structures do not overlap while maintaining close spacing between the first emitter and the second emitter.

In some implementations, an emitter may include a substrate and a set of layers on the substrate. The set of layers may include a first mirror, a second mirror that includes a partial reflector and an additional layer, and at least one active region between the first mirror and the second mirror. A first reflectivity of the second mirror at a lateral center of the second mirror may be different than a second reflectivity of the second mirror at a lateral edge of the second mirror.

A method for producing a composite component (100) and a composite component (100) comprising a plurality of components (10), a removable sacrificial layer (4), an anchoring structure (3) and a common intermediate carrier (90) are specified. The components each have a semiconductor body (2) comprising an active zone (23), are configured to generate coherent electromagnetic radiation and are arranged on the common intermediate carrier. The sacrificial layer is arranged in a vertical direction between the intermediate carrier and the components. The anchoring structure comprises a plurality of anchoring elements (3A, 3B), wherein the anchoring structure and the sacrificial layer provide a mechanical connection between the intermediate carrier and the components. Without the sacrificial layer, the components are mechanically connected to the intermediate carrier solely via the anchoring elements, wherein the anchoring elements are formed in such a way that under mechanical load they release the components so that the components are detachable from the intermediate carrier and are thus formed to be transferable.