Provided is a nitride semiconductor laser element which includes: a stacked structure including a plurality of semiconductor layers including a light emitting layer, the stacked structure including a pair of resonator end faces located on opposite ends; and a protective film including a dielectric body and disposed on at least one of the pair of resonator end faces. The protective film includes a first protective film (a first emission surface protective film), a second protective film (a second emission surface protective film), and a third protective film (a third emission surface protective film) disposed in stated order above the stacked structure. The first protective film is amorphous, the second protective film is crystalline, and the third protective film is amorphous.

A device that includes a metal(III)-polar III-nitride substrate having a first surface opposite a second surface, a tunnel junction formed on one of the first surface or a buffer layer disposed on the first surface, a p-type III-nitride layer formed directly on the tunnel junction, and a number of material layers; a first material layer formed on the p-type III-nitride layer, each subsequent layer disposed on a preceding layer, where one layer from the number of material layers is patterned into a structure, that one layer being a III-nitride layer. Methods for forming the device are also disclosed.

A method for soldering electronic components includes providing a circuit substrate; providing a plurality of electronic components; placing the plurality of electronic components onto the circuit substrate; applying a conductor between the plurality of electronic components and the circuit substrate; providing an energy source which projects an energy beam with a first coverage; enlarging the energy beam and projecting the energy beam onto the circuit substrate with a second coverage; and melting the conductor within the second coverage via the energy beam and fixing the corresponding electronic components on the circuit substrate through the melted conductor. Besides, a method for manufacturing a LED display is disclosed.

Degradation of laser characteristics and increase in variations in characteristics are reduced. A semiconductor apparatus (100) includes a semiconductor chip including a semiconductor substrate (1) including a group-III nitride semiconductor and a laminate structure (2) located on a first surface (1a) of the semiconductor substrate (1), and on at least one of side surfaces of the semiconductor chip orthogonal to the first surface (1a), plural groove-like machining traces (105) are provided at a pitch of 2 μm (micrometers) or more but 30 μm or less in a direction parallel to a second surface (1b) of the semiconductor substrate (1) opposite to the first surface (1a) of the semiconductor substrate (1), the groove-like machining traces extending from the second surface (1b) to a third surface (1a) of the laminate structure (2) opposite to a surface of the laminate structure (2) contacting the first surface (1a).

A reproducible method for producing a resonant structure of a distributed-feedback semiconductor laser exhibiting a narrow waveguide of the order of some ten micrometers, the production of the diffraction grating being carried out subsequent to the step of producing the strip is provided. In a last step, a diffraction grating is engraved as a function of a desired precise wavelength.

A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.

A 6.4 Tbps silicon-based photonics engine transceiver chip module for high-speed optical communication manufactured based on processing techniques of semiconductors such as silicon-on-insulator (SOI) and indium phosphide (InP). The photonics engine transceiver chip module uses a silicon photonic chip as a substrate, and optical chips of an InP laser and an optical amplifier are heterogeneously integrated with the silicon photonic chip through bonding or flip-chip soldering. As a pump light source, the laser generates a soliton-based optical frequency comb by using an ultra-low loss silicon nitride (SiN) resonator cavity, and can be used as a multi-wavelength laser. This reduces use of a single-wavelength laser chip, reduces a power consumption and heat conduction of a laser in an optical chip of a photonic engine, and improves an integration level of an optical device. The optical frequency comb generates an optical carrier with wide bandwidth coverage and a large quantity of wavelengths.

A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN and having a first Al composition ratio, and a multiple quantum well layer in which a plurality (number N) of barrier layers including AlGaN having a second Al composition ratio more than the first Al composition ratio and a plural (number N) well layers having an Al composition ratio less than the second Al composition ratio are stacked alternately in this order, wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side.

A nitride semiconductor multilayer structure includes a first nitride semiconductor layer; a second nitride semiconductor layer; and a third nitride semiconductor layer formed between the first nitride semiconductor layer and the second nitride semiconductor layer. The third nitride semiconductor layer includes a first region and a second region that surrounds the first region in a same plane, and an indium content of the second region is lower than an indium content of the first region.

A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) growing a first cladding layer of a first conductive type on a substrate; (b) growing a first optical guide layer of the first conductive type on the first cladding layer; (c) forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after the planarizing at least one side surface of the holes is a {10-10} facet.