A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, an index matching layer and a photonic crystal structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The index matching layer is disposed over the n-type cladding layer and is arranged around the active layer. The index matching layer is electrically insulating, and an effective refractive index of the index matching layer is substantially identical to an effective refractive index of the active layer. The photonic crystal structure is disposed over the active layer and the index matching layer.

A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

To provide an optical semiconductor device having excellent long-term reliability, the optical semiconductor device includes: a substrate; a mesa structure provided on the substrate; a semiconductor burial layer provided in contact with two sides of the mesa structure; and an electrode containing Au, which is provided above the semiconductor burial layer. The mesa structure includes a first conductivity type semiconductor layer, a multiple-quantum well layer, and a second conductivity type semiconductor layer, which are stacked in the stated order from a substrate side. The semiconductor burial layer includes a first semi-insulating InP layer provided in contact with side portions of the mesa structure, a first anti-diffusion layer provided in contact with the first semi-insulating InP layer, and a second semi-insulating InP layer provided on the first anti-diffusion layer. The first anti-diffusion layer has an Au diffusion constant that is smaller than that of the first semi-insulating InP layer.

A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.

The invention relates to an edge emitting laser diode comprising a semiconductor layer stack whose growth direction defines a vertical direction, and wherein the semiconductor layer stack comprises an active layer and a waveguide layer. A thermal stress element is arranged in at least indirect contact with the semiconductor layer stack, the thermal stress element being configured to generate a thermally induced mechanical stress in the waveguide layer that counteracts the formation of a thermal lens.

A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

A tunable laser device is described. In one example, the tunable laser device includes an adaptive ring mirror, a gain waveguide, a loop mirror waveguide, and a booster amplifier waveguide. The gain waveguide and the boost amplifier waveguide can be formed in a semiconductor optical amplifier (SOA) region of the tunable laser device, and the adaptive ring mirror and the loop mirror waveguide can be formed in a silicon photonics region of the tunable laser device. The adaptive ring mirror includes a phase shifter optically coupled between a number of MMI couplers. By inducing a phase shift using the phase shifter, the wavelength of the output of the tunable laser device can be altered or adjusted for use in coherent fiber-optic communications, for example, among other applications.

Disclosed are embodiments of bidirectionally emitting semiconductor (BEST) laser architectures including higher order mode suppression structures. The higher order mode suppression structures are centrally located and extend from an inner transition boundary, which may be established by confronting high reflector (HR) facets in some embodiments or a central plane defining two sides of a unitary, bidirectional optical cavity in other embodiments. Examples of the higher order mode suppression structures include narrow regions of bidirectional flared laser oscillator waveguide (FLOW) devices, which are also referred to as reduced mode diode (REM) devices; high-index regions of bidirectional higher-order mode suppressed laser (HOMSL) devices; and non- or less-etched gain-guided lateral waveguides of bidirectional low divergence semiconductor laser (LODSL) devices. The aforementioned devices may also include scattering features, distributed feedback (DFB) gratings, distributed Bragg reflection (DBR) gratings, and combination thereof that also act as supplemental higher order mode suppression structures.

A semiconductor laser device includes: a first semiconductor layer of a first conductivity type; a light emitting layer formed above the first semiconductor layer; a second semiconductor layer of a second conductivity type formed above the light emitting layer; and an electrode formed above a ridge portion formed in the second semiconductor layer. The electrode is divided at positions at which an integrated value of light intensities of higher-order mode oscillation has a local maximum.