A semiconductor laser device includes an N-type cladding layer, an active layer, and a P-type cladding layer. The active layer includes a well layer, a P-side first barrier layer above the well layer, and a P-side second barrier layer above the P-side first barrier layer. The P-side second barrier layer has an AI composition ratio higher than an AI composition ratio of the P-side first barrier layer. The P-side second barrier layer has band gap energy greater than band gap energy of the P-side first barrier layer. The semiconductor laser device has an end face window structure in which band gap energy of a portion of the well layer in a vicinity of an end face that emits the laser light is greater than band gap energy of a central portion of the well layer in a resonator length direction.

A laser structure may include a substrate, an active region arranged on the substrate, and a waveguide arranged on the active region. The waveguide may include a first surface and a second surface that join to form a first angle relative to the active region. A material may be deposited on the first surface and the second surface of the waveguide.

A light-emitting element includes a mesa structure in which a first compound semiconductor layer of a first conductivity type, an active layer, and a second compound semiconductor layer of a second conductivity type are disposed in that order, wherein at least one of the first compound semiconductor layer and the second compound semiconductor layer has a current constriction region surrounded by an insulation region extending inward from a sidewall portion of the mesa structure; a wall structure disposed so as to surround the mesa structure; at least one bridge structure connecting the mesa structure and the wall structure, the wall structure and the bridge structure each having the same layer structure as the portion of the mesa structure in which the insulation region is provided; a first electrode; and a second electrode disposed on a top face of the wall structure.

The embodiment relates to a light-emitting device in which a positional relationship between a modified refractive index region's gravity-center position and the associated lattice point differs from a conventional device, and a production method. In this device, a stacked body including a light-emitting portion and a phase modulation layer optically coupled to the light-emitting portion is on a substrate. The phase modulation layer includes a base layer and plural modified refractive index regions in the base layer. Each modified refractive index region's gravity-center position locates on a virtual straight line passing through a corresponding reference lattice point among lattice points of a virtual square lattice on the base layer's design plane. A distance between the reference lattice point and the modified refractive index region's gravity center along the virtual straight line is individually set such that this device outputs light forming an optical image.

A semiconductor laser comprises: a semiconductor substrate; a semiconductor structure part that is formed on the substrate; a surface electrode formed on the structure part opposite to the substrate; and a conductive member formed on the surface electrode opposite to the substrate. The conductive member is such that part of or the whole of a side face thereof on an emission facet side, the side face being one side face in an x-direction parallel to an extending direction of an active layer, is formed to be away from an emission facet in the structure part toward a side of the other facet opposed to the emission facet in the x-direction. In the semiconductor laser, a receding portion is formed such that at least part of the conductive member recedes toward the side of the other facet in the x-direction from the emission facet.

A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

A laser diode includes a ridge portion, channel portions located adjacent to the ridge portion such that the ridge portion is sandwiched, the channel portions being shorter in height than the ridge portion, terrace portions adjacent to opposite sides of the respective channel portions from the ridge portion and longer in height than the channel portions, supporting portions provided over the respective channel portions, separated from side surfaces of the ridge portion or side surfaces of terrace portions or both, and made of resin, a ceiling portion including first portions provided over the supporting portions and second portions continuous with the first portions and located over the respective channel portions with hollow portions interposed therebetween, the ceiling portion being made of resin, and a metal layer provided over the ceiling portion and connected to an upper surface of the ridge portion.

A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

A multi-terraced structure includes three or more sections with different thicknesses and adjacent to each other in a direction in which an optical waveguide extends. An adjacent pair of the three or more sections includes one section smaller in thickness and closer to an end face of the semiconductor multilayers and another section larger in thickness and farther from the end face of the semiconductor multilayers. The three or more sections include: a first section with a smallest thickness, including the lowermost layer; a second section adjacent to the first section, including the lowermost layer and additionally a stress relief layer composed of a material equal to or lower than Au in Young's modulus; and a third section with a largest thickness, including all layers from the uppermost layer to the lowermost layer.

The invention relates to a semiconductor laser diode (1) comprising: —a semiconductor layer sequence (2) having an active region (20) provided for generating radiation; —a radiation decoupling surface (10) which extends perpendicular to a main extension plane of the active region; —a main surface (11) which delimits the semiconductor layer sequence in the vertical direction; —a contact layer (3) which adjoins the main surface; and —a heat-dissipating layer (4), regions of which are arranged on a side of the contact layer facing away from the active region, wherein the contact layer is exposed in places for external electrical contact of the semiconductor laser diode. The invention also relates to a semiconductor component.