A method for fabricating a semiconductor device on a semiconductor substrate, wherein the semiconductor device is adapted to provide target lasing properties, the method includes creating, a mask layer over the semiconductor substrate, the mask layer having at least one opening to expose a region of the semiconductor substrate, etching using a first etching process the exposed region, utilizing inductively coupled plasma with preselected first set of parameters to obtain a baseline mesa profile, the baseline mesa profile having a baseline mesa angle, re-etching using a second etching process the etched region, utilizing inductively coupled plasma with preselected second set of parameters, to alter the baseline mesa profile to obtain a requisite mesa profile having a requisite mesa angle defined by the target lasing properties and the requisite mesa angle being different from the baseline mesa angle, removing the mask layer and defining a p-n junction for the semiconductor substrate.

Some aspects for the invention include a method and a structure including a light-emitting device disposed over a second crystalline semiconductor material formed over a semiconductor substrate comprising a first crystalline material.

A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.

A laser diode has a layer arrangement including a first layer structure extending along a Z axis in a longitudinal direction, along an X axis in a transverse direction and along a Y axis in a height direction, and a second and third layer structure arranged along the Z axis on opposite longitudinal sides of the first layer structure and adjoining the first layer structure, wherein the active zone of the first layer structure is arranged offset in height relative to the active zones of the second and third layer structures, and an intermediate layer is arranged laterally with respect to the first layer structure in the second and third layer structures, the intermediate layer configured as an electrically blocking layer that hinders or prevents a current flow, and the intermediate layer being arranged between the active zone and an n contact.

A method for fabricating a semiconductor device on a semiconductor substrate, wherein the semiconductor device is adapted to provide target lasing properties, the method includes creating, a mask layer over the semiconductor substrate, the mask layer having at least one opening to expose a region of the semiconductor substrate, etching using a first etching process the exposed region, utilizing inductively coupled plasma with preselected first set of parameters to obtain a baseline mesa profile, the baseline mesa profile having a baseline mesa angle, re-etching using a second etching process the etched region, utilizing inductively coupled plasma with preselected second set of parameters, to alter the baseline mesa profile to obtain a requisite mesa profile having a requisite mesa angle defined by the target lasing properties and the requisite mesa angle being different from the baseline mesa angle, removing the mask layer and defining a p-n junction for the semiconductor substrate.

A method for fabricating a semiconductor device on a semiconductor substrate and an optical laser system utilizing laser devices fabricated from the method. The optical laser system includes a first laser device configured to generate laser light, an optical assembly configured to receive the generated laser light from the first laser device, and collimate the received laser light from the first laser device to provide collimated laser light. The optical laser system further comprises a second laser device configured to receive the collimated laser light, and amplify the received collimated laser light via application of a drive current to generate amplified laser light, wherein at least one of the first laser device and the second laser device is fabricated via the method for fabricating a semiconductor device on a semiconductor substrate.