A vertical cavity surface-emitting laser configured to emit laser light having a wavelength of 830 nm to 910 nm includes a substrate having a main surface including GaAs, a first distributed Bragg reflector, an active layer, and a second distributed Bragg reflector. The substrate, the first distributed Bragg reflector, the active layer, and the second distributed Bragg reflector are arranged in a first axis direction intersecting the main surface. The main surface has an off angle of 6° or more with respect to a (100) plane. The active layer includes In.sub.xAl.sub.yGa.sub.1-x-yAs (0<x<1, 0≤y<1). The active layer has a strain. An absolute value of the strain is 0.5% to 1.4%.

A smart light source configured for visible light communication. The light source includes a controller comprising a modem configured to receive a data signal and generate a driving current and a modulation signal based on the data signal. Additionally, the light source includes a light emitter configured as a pump-light device to receive the driving current for producing a directional electromagnetic radiation with a first peak wavelength in the ultra-violet or blue wavelength regime modulated to carry the data signal using the modulation signal. Further, the light source includes a pathway configured to direct the directional electromagnetic radiation and a wavelength converter optically coupled to the pathway to receive the directional electromagnetic radiation and to output a white-color spectrum. Furthermore, the light source includes a beam shaper configured to direct the white-color spectrum for illuminating a target of interest and transmitting the data signal.

Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

An aspect of the present disclosure includes a direct modulated laser (DML) with a dielectric current confinement ridge waveguide (RWG) structure. The DML comprises a substrate, one or more layers of material disposed on the substrate to provide a multi quantum well (MQW), first and second insulation/dielectric structures disposed on opposite sides of the MQW, and one or more layers of material disposed on the MQW to provide a mesa structure for receiving a driving current. The mesa structure is preferably disposed between the first and second insulation structures to provide a dielectric current confinement (RWG) structure. The mesa structure further preferably includes an overall width that is greater than the overall width than the active region of the DML that provides the MQW.

Materials containing picocrystalline quantum dots that form artificial atoms are disclosed. The picocrystalline quantum dots (in the form of born icosahedra with a nearly-symmetrical nuclear configuration) can replace corner silicon atoms in a structure that demonstrates both short range and long-range order as determined by x-ray diffraction of actual samples. A novel class of boron-rich compositions that self-assemble from boron, silicon, hydrogen and, optionally, oxygen is also disclosed. The preferred stoichiometric range for the compositions is (B.sub.12H.sub.w).sub.xSi.sub.yO.sub.z with 3≤w≤5, 2≤x≤4, 2≤y≤5 and 0≤z≤3. By varying oxygen content and the presence or absence of a significant impurity such as gold, unique electrical devices can be constructed that improve upon and are compatible with current semiconductor technology.

A monolithically integrated optical device. The device has a gallium and nitrogen containing substrate member having a surface region configured on either a non-polar or semi-polar orientation. The device also has a first waveguide structure configured in a first direction overlying a first portion of the surface region. The device also has a second waveguide structure integrally configured with the first waveguide structure. The first direction is substantially perpendicular to the second direction.

A packaged integrated white light source configured for illumination and communication or sensing comprises one or more laser diode devices. An output facet configured on the laser diode device outputs a laser beam of first electromagnetic radiation with a first peak wavelength. The first wavelength from the laser diode provides at least a first carrier channel for a data or sensing signal.

A disclosed surface-emitting laser module includes a surface-emitting laser formed on a substrate to emit light perpendicular to its surface, a package including a recess portion in which the substrate having the surface-emitting laser is arranged, and a transparent substrate arranged to cover the recess portion of the package and the substrate having the surface-emitting laser such that the transparent substrate and the package are connected on a light emitting side of the surface-emitting laser. In the surface-emitting laser module, a high reflectance region and a low reflectance region are formed within a region enclosed by an electrode on an upper part of a mesa of the surface-emitting laser, and the transparent substrate is slanted to the surface of the substrate having the surface-emitting laser in a polarization direction of the light emitted from the surface-emitting laser determined by the high reflectance region and the low reflectance region.

A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.

Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.