A laser diode apparatus has a first waveguide layer including a gain region connected in series with a second waveguide layer with a second gain region. A tunnel junction is positioned between the first and second guide layers. A single collimator is positioned in an output path of laser beams emitted from the first and second waveguide layers. The optical beam from the single collimator may be coupled into an optical fiber.

An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.

A semiconductor optical amplifier integrated laser includes a semiconductor laser oscillator portion that oscillates laser light having a wavelength included in a gain band and a semiconductor optical amplifier portion that amplifies laser light output from the semiconductor laser oscillator portion. The semiconductor laser oscillator portion and the semiconductor optical amplifier portion have one common p-i-n structure, the common p-i-n structure includes an active layer, a cladding layer provided apart from the active layer, and a common functional layer formed in the cladding layer, and the common functional layer includes a first portion that reflects light having a wavelength within the gain band in the semiconductor laser oscillator portion and a second portion that transmits light having a wavelength within the gain band in the semiconductor optical amplifier portion.

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer having a main extension plane and which, in operation, is configured to generate light in an active region and emit light via a light-outcoupling surface, the active region extending from a back surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an active region disposed on the active layer and having an aperture and an insulation region disposed around the aperture; and a second reflective layer disposed on the active region. The second reflective layer may include a core reflective layer disposed in a position vertically corresponding to the aperture. The embodiment may include a cladding insulation layer disposed around the core reflective layer. The horizontal cross-section of the aperture may be different from the horizontal cross-section of the core reflective layer.

There is provided a semiconductor element containing gallium nitride. The semiconductor element includes a semiconductor layer including a first surface having a first region and a second region that is a projecting portion having a strip shape and projecting relative to the first region or a recessed portion having a strip shape and being recessed relative to the first region. Of the first surface, at least one of surfaces of the first region and the second region includes a crystal plane having a plane orientation different from a (000-1) plane orientation and a (1-100) plane orientation.

A phosphor integrated laser-based light source includes a thermally conductive material arranged on a package base adjacent to a laser diode chip and an optically transparent material coupled to the thermally conductive material. A groove extends between the thermally conductive material and the optically transport material and is aligned to receive electromagnetic radiation from the laser diode chip. A wavelength conversion material is coupled to the optically transparent material and is configured to receive at least a portion of the electromagnetic radiation emitted into the groove and transmitted through the optically transparent material. A reflective material surrounds sides of the optically transparent material and the wavelength conversion material.

A phosphor integrated laser-based light source includes a thermally conductive material arranged on a package base adjacent to a laser diode chip and an optically transparent material coupled to the thermally conductive material. A groove extends between the thermally conductive material and the optically transport material and is aligned to receive electromagnetic radiation from the laser diode chip. A wavelength conversion material is coupled to the optically transparent material and is configured to receive at least a portion of the electromagnetic radiation emitted into the groove and transmitted through the optically transparent material. A reflective material surrounds sides of the optically transparent material and the wavelength conversion material.

An array layout of VCSELs is intentionally mis-aligned with respect to the xy-plane of the device structure as defined by the crystallographic axes of the semiconductor material. The mis-alignment may take the form of skewing the emitter array with respect to the xy-plane, or rotating the emitter array. In either case, the layout pattern retains the desired, row/column structure (necessary for dicing the structure into one-dimensional arrays) while reducing the probability that an extended defect along a crystallographic plane will impact a large number of individual emitters.