H02H3/247

GROUNDING DEVICE FOR ELECTRIC FENCE
20220393442 · 2022-12-08 ·

A disclosed electric fence system includes an electric fence; an energizer for generating a plurality of electric pulses applied to the electric fence; a detection circuit for monitoring a voltage of the electric fence; and a grounding device for grounding the electric fence when the electric fence is off. The grounding device is connected to the electric fence, the energizer, the detection circuit, and the ground.

GROUNDING DEVICE FOR ELECTRIC FENCE
20220393442 · 2022-12-08 ·

A disclosed electric fence system includes an electric fence; an energizer for generating a plurality of electric pulses applied to the electric fence; a detection circuit for monitoring a voltage of the electric fence; and a grounding device for grounding the electric fence when the electric fence is off. The grounding device is connected to the electric fence, the energizer, the detection circuit, and the ground.

Fine resolution on-chip voltage simulation to prevent under voltage conditions

Embodiments of the present disclosure relate to managing power provided to a semiconductor circuit to prevent undervoltage conditions. A measured voltage value describing a measured supply voltage at a first subcircuit of a semiconductor circuit can be received, the measured voltage value having a first resolution. A selected metric indicative of a supply voltage present at the first subcircuit can be received, the selected metric having a second resolution higher than the first resolution. The selected metric is calibrated to obtain a calibrated metric when a transition of the measured voltage value occurs.

Fine resolution on-chip voltage simulation to prevent under voltage conditions

Embodiments of the present disclosure relate to managing power provided to a semiconductor circuit to prevent undervoltage conditions. A measured voltage value describing a measured supply voltage at a first subcircuit of a semiconductor circuit can be received, the measured voltage value having a first resolution. A selected metric indicative of a supply voltage present at the first subcircuit can be received, the selected metric having a second resolution higher than the first resolution. The selected metric is calibrated to obtain a calibrated metric when a transition of the measured voltage value occurs.

DYNAMIC TIMING FOR SHUTDOWN INCLUDING ASYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY REFRESH (ADR) DUE TO AC UNDERVOLTAGE
20220357956 · 2022-11-10 ·

A technique for managing undervoltage in a compute system is disclosed. The technique includes a method that further includes: detecting an AC undervoltage condition in the compute system; and upon detecting the AC undervoltage condition: dynamically determining a holdup time as a function of the present load; determining a monitoring period as a function of the dynamically determined holdup time; waiting for the determined monitoring period to expire; and upon expiration of the determined monitoring period, perform a shutdown process if the AC undervoltage condition persists.

DYNAMIC TIMING FOR SHUTDOWN INCLUDING ASYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY REFRESH (ADR) DUE TO AC UNDERVOLTAGE
20220357956 · 2022-11-10 ·

A technique for managing undervoltage in a compute system is disclosed. The technique includes a method that further includes: detecting an AC undervoltage condition in the compute system; and upon detecting the AC undervoltage condition: dynamically determining a holdup time as a function of the present load; determining a monitoring period as a function of the dynamically determined holdup time; waiting for the determined monitoring period to expire; and upon expiration of the determined monitoring period, perform a shutdown process if the AC undervoltage condition persists.

Modulation mode control circuit, switch control circuit including the modulation mode control circuit and power supply device including the switch control circuit

A modulation mode control circuit includes a modulation mode controller configured to select modulation mode based on the result of a comparison between a control voltage and a predetermined PWM threshold voltage and to generate a PWM reference voltage using the PWM threshold voltage and the control voltage and a control signal generation unit configured to generate a first control signal based on the result of a comparison between an oscillation control signal for controlling a switching frequency and the control voltage and the result of a comparison between the oscillation control signal and the PWM threshold voltage and to generate a second control signal based on the result of a comparison between the oscillation control signal and the PWM reference voltage.

Modulation mode control circuit, switch control circuit including the modulation mode control circuit and power supply device including the switch control circuit

A modulation mode control circuit includes a modulation mode controller configured to select modulation mode based on the result of a comparison between a control voltage and a predetermined PWM threshold voltage and to generate a PWM reference voltage using the PWM threshold voltage and the control voltage and a control signal generation unit configured to generate a first control signal based on the result of a comparison between an oscillation control signal for controlling a switching frequency and the control voltage and the result of a comparison between the oscillation control signal and the PWM threshold voltage and to generate a second control signal based on the result of a comparison between the oscillation control signal and the PWM reference voltage.

DELAY-TIME CORRECTION CIRCUIT, SEMICONDUCTOR-DEVICE DRIVE CIRCUIT, AND SEMICONDUCTOR DEVICE

A delay-time correction circuit delays an input signal for generating a pre-drive signal to a drive unit generating a drive signal. A transition-change sensor senses a transition change in one of a turn-on operation and turn-off operation. A correction-signal generator generates a correction signal in response to the transition change sensed by the transition-change sensor and to the input signal. A delay output unit generates an output signal corresponding to the pre-drive signal by delaying the input signal using the correction signal. The delay output unit delays the output signal that instructs the other of a turn-on operation and turn-off operation, from the input signal, in accordance with a length of a period for the transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation.

DELAY-TIME CORRECTION CIRCUIT, SEMICONDUCTOR-DEVICE DRIVE CIRCUIT, AND SEMICONDUCTOR DEVICE

A delay-time correction circuit delays an input signal for generating a pre-drive signal to a drive unit generating a drive signal. A transition-change sensor senses a transition change in one of a turn-on operation and turn-off operation. A correction-signal generator generates a correction signal in response to the transition change sensed by the transition-change sensor and to the input signal. A delay output unit generates an output signal corresponding to the pre-drive signal by delaying the input signal using the correction signal. The delay output unit delays the output signal that instructs the other of a turn-on operation and turn-off operation, from the input signal, in accordance with a length of a period for the transition change in the one of a turn-on operation and turn-off operation that is performed immediately before the other of a turn-on operation and turn-off operation.