A semiconductor device includes a switching element, a control circuit, and a first and second temperature detectors. The control circuit controls the switching element and have an overcurrent detection circuit for the switching element. The first temperature detector detects the temperature of the switching element and the second temperature detector detects the temperature of the control circuit. The control circuit includes a reference correction circuit for correcting an overcurrent reference value of the overcurrent detection circuit on the basis of a first detection value and a second detection value detected by the first and second temperature detectors and outputting a corrected overcurrent reference value.

There has been a problem in semiconductor apparatuses of related art in which a circuit operation cannot be returned after a reverse current occurred. In one embodiment, a semiconductor apparatus includes a timer block configured to count up a count value to a predetermined value in response to a control signal being enabled, the control signal instructing a power MOS transistor to be turned on, and a protection transistor including a drain connected to a gate of the power MOS transistor, a source and a back gate connected to a source of the power MOS transistor, and an epitaxial layer in which the power MOS transistor is formed, the epitaxial layer being supplied with a power supply voltage. The protection transistor short-circuits the source and gate of the power MOS transistor in response to an output voltage of the power MOS transistor meeting a predetermined condition and the count value reaching the predetermined value. The timer block resets the count value when the output voltage of the power MOS transistor no longer meets the predetermined condition.

An ignition device capable of more reliably protecting a primary winding of an ignition coil from high temperature is provided. The ignition device includes an ignition coil, a switching element, a temperature sensor, and a thermal cutout circuit. A primary winding of the ignition coil is connected to a DC power supply and the switching element. The temperature sensor is provided to measure the temperature of the switching element. The thermal cutout circuit forcibly turns off the switching element when the temperature of the switching element becomes higher than a predetermined forcible turn-off temperature Toff. The thermal cutout circuit is configured to lower the forcible turn-off temperature Toff when the power supply voltage Vb of the DC power supply decreases.

A semiconductor device 100 has a power transistor N1 of vertical structure and a temperature detection element 10a configured to detect abnormal heat generation by the power transistor N1. The power transistor N1 includes a first electrode 208 formed on a first main surface side (front surface side) of a semiconductor substrate 200, a second electrode 209 formed on a second main surface side (rear surface side) of the semiconductor substrate 200, and pads 210a-210f positioned unevenly on the first electrode 208. The temperature detection element 10a is formed at a location of the highest heat generation by the power transistor N1, the location (near the pad 210b where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads 210a-210f.

A semiconductor device 100 has a power transistor N1 of vertical structure and a temperature detection element 10a configured to detect abnormal heat generation by the power transistor N1. The power transistor N1 includes a first electrode 208 formed on a first main surface side (front surface side) of a semiconductor substrate 200, a second electrode 209 formed on a second main surface side (rear surface side) of the semiconductor substrate 200, and pads 210a-210f positioned unevenly on the first electrode 208. The temperature detection element 10a is formed at a location of the highest heat generation by the power transistor N1, the location (near the pad 210b where it is easiest for current to be concentrated) being specified using the uneven positioning of the pads 210a-210f.

A circuit breaker includes a set of separable contacts moveable between a closed position and an open position, an operating mechanism configured to open the set of contacts, a conductor coupled to the set of contacts, a current transformer coupled to the conductor, and a trip circuit coupled to the operating mechanism and to the current transformer and configured to cause the operating mechanism to open the set of contacts when a current through the conductor exceeds a current threshold that is greater than a saturation threshold of the current transformer. The trip circuit is further configured to vary the current threshold during an interval following a closure of the set of the contacts and to provide a fixed current threshold thereafter.

A device comprises a solid-state power switch and a control configured to operate the power switch if at least one of a plurality of fault conditions of the device is triggered. An interface is configured to output a signal having a value selectively indicative of the triggered at least one fault condition in response to the at least one fault condition being triggered.

An integrated circuit that may be employed as a smart switch is described herein. In accordance with one embodiment the integrated circuit includes a power transistor coupled between a supply pin and an output pin and further includes a control circuit configured to trigger a switch-on and a switch-off of the power transistor in accordance with an input signal. The control circuit is configured to trigger a switch-off of the power transistor when a load current passing through the power transistor is at or above a predetermined current and a supply voltage received at the supply pin is at or below a predetermined threshold voltage.

To provide an overheat protection circuit which is not affected by a leak current while being low in current consumption and good in detection accuracy, and a voltage regulator equipped with the overheat protection circuit. An overheat protection circuit is configured to include a leak current detection circuit which detects that a leak current has flowed at a high temperature, a bias circuit which allows a bias current to flow in response to an output signal of the leak current detection circuit, and a temperature detection circuit operated by the bias current.

An integrated circuit breaker includes a solid state switching module (SSWM) configured to receive and switchable control a line power (LP) for a given phase, and output a first switched power (SP) to a load. A first sensor (LPS) senses LP currents. A second sensor (SPS) senses SP currents. A power module controls operating states of the SSWM based upon LPS and SPS reading(s). The LPS and/or the SPS may also sense temperatures. The power module includes a high voltage domain, isolated from a low voltage domain, that includes a gate driver coupled to the SSWM and a high voltage controller providing drive signals to the gate driver. The low voltage domain includes an LP monitor and an SP monitor that detects anomalous LP and/or SP conditions and communicates error signals to the high voltage domain and to users for reporting, diagnostic, and/or other purposes via an external communications module.