A method and related apparatus for extending a DC voltage range of a rectifier circuit for the supply, from an AC grid, of a DC load which is connected to a DC rectifier output of the rectifier circuit, wherein an AC rectifier input of the rectifier circuit is connected via a grid connection point to the AC grid, wherein the rectifier circuit includes an AC/DC converter having an AC input and a DC output, wherein the AC/DC converter includes a converter circuit having semiconductor switches and freewheeling diodes connected in an antiparallel arrangement thereto, wherein an inductance is connected between the AC input of the AC/DC converter and the grid connection point. The method includes setting a desired DC operating voltage U.sub.DOC,soll on the DC output of the AC/DC converter or on the DC rectifier output, or both, by an actuation of semiconductor switches of the AC/DC converter, wherein, when the desired DC operating voltage U.sub.DC,soll lies below a value of an amplitude .Math..sub.4 of an alternating voltage on the AC input of the AC/DC converter, the semiconductor switches of the AC/DC converter are actuated for an exchange of reactive power Q.sub.1(t) with the AC grid, which has a voltage-lowering effect upon the amplitude .Math..sub.4 of the AC voltage at the AC input of the AC/DC converter, such that the amplitude .Math..sub.4 approaches the desired DC operating voltage U.sub.DC,soll, and wherein the exchange of the reactive power Q.sub.1(t) with the AC grid is executed during or shortly before an electrical connection or an electrical isolation of the DC load to or from the rectifier circuit.

A control circuit for a power converter that configures a system that is mounted to a vehicle and includes a rotating electric machine that has multiple phases and includes a rotor that is capable of transmitting power to and from a drive wheel, and the power converter that includes upper- and lower-arm switches that are electrically connected to phase windings of the rotating electric machine. The control circuit determines whether an abnormality has occurred in the system, determines whether the system has been started based on an output voltage of the insulating power supply, and performs short-circuit control to turn on an on-side switch that is either one of the upper- and lower-arm switches and to turn off an off-side switch that is the other of the upper- and lower-arm switches, in response to the system being determined to have been started, and the abnormality being determined to have occurred.

We disclose a III-nitride semiconductor based heterojunction power device comprising: a first heterojunction transistor formed on a substrate, the first heterojunction transistor comprising: a first III-nitride semiconductor region formed over the substrate, wherein the first III-nitride semiconductor region comprises a first heterojunction comprising at least one two dimensional carrier gas; a first terminal operatively connected to the first III-nitride semiconductor region; a second terminal laterally spaced from the first terminal and operatively connected to the first III-nitride semiconductor region; a first plurality of highly doped semiconductor regions of a first polarity formed over the first III-nitride semiconductor region, the first plurality of highly doped semiconductor regions being formed between the first terminal and the second terminal; a first gate region operatively connected to the first plurality of highly doped semiconductor regions; and a second heterojunction transistor formed on the substrate. The second heterojunction transistor comprises: a second III-nitride semiconductor region formed over the substrate, wherein the second III-nitride semiconductor region comprises a second heterojunction comprising at least one two dimensional carrier gas; a third terminal operatively connected to the second III-nitride semiconductor region; a fourth terminal laterally spaced from the third terminal in the first dimension and operatively connected to the second III-nitride semiconductor region; a second gate region being formed over the second III-nitride semiconductor region, and between the third terminal and the fourth terminal. One of the first and second heterojunction transistors is an enhancement mode field effect transistor and the other of the first and second heterojunction transistors is a depletion mode field effect transistor.

We disclose a III-nitride semiconductor based heterojunction power device comprising: a first heterojunction transistor formed on a substrate, the first heterojunction transistor comprising: a first III-nitride semiconductor region formed over the substrate, wherein the first III-nitride semiconductor region comprises a first heterojunction comprising at least one two dimensional carrier gas; a first terminal operatively connected to the first III-nitride semiconductor region; a second terminal laterally spaced from the first terminal and operatively connected to the first III-nitride semiconductor region; a first plurality of highly doped semiconductor regions of a first polarity formed over the first III-nitride semiconductor region, the first plurality of highly doped semiconductor regions being formed between the first terminal and the second terminal; a first gate region operatively connected to the first plurality of highly doped semiconductor regions; and a second heterojunction transistor formed on the substrate. The second heterojunction transistor comprises: a second III-nitride semiconductor region formed over the substrate, wherein the second III-nitride semiconductor region comprises a second heterojunction comprising at least one two dimensional carrier gas; a third terminal operatively connected to the second III-nitride semiconductor region; a fourth terminal laterally spaced from the third terminal in the first dimension and operatively connected to the second III-nitride semiconductor region; a second gate region being formed over the second III-nitride semiconductor region, and between the third terminal and the fourth terminal. One of the first and second heterojunction transistors is an enhancement mode field effect transistor and the other of the first and second heterojunction transistors is a depletion mode field effect transistor.

Techniques are disclosed that use an alternating current bridge circuit to determine whether an impedance change occurs at an input to DC-DC voltage converter(s). Techniques are also disclosed for a DC power distribution system that utilizes isolation circuitry coupled to an input of DC-DC voltage converter(s).

Techniques are disclosed that use an alternating current bridge circuit to determine whether an impedance change occurs at an input to DC-DC voltage converter(s). Techniques are also disclosed for a DC power distribution system that utilizes isolation circuitry coupled to an input of DC-DC voltage converter(s).

A pre-charge control circuit includes a control unit, a conversion unit, and a pre-charge switch. The control unit provides a control signal according to a PWM signal, and the conversion unit provides a control voltage according to the control signal. The pre-charge switch adjusts a magnitude of the current flowing through the input path of the electronic circuit according to the control voltage.

A method of wirelessly transmitting power includes: causing a power transmission circuit to transmit, to a master power reception circuit, a portion of power it is capable of transmitting; adjusting operation of a slave power reception unit until a first rectified voltage produced by the master power reception circuit and a second rectified voltage produced by the slave power reception unit are equal; causing the power transmission circuit to transmit additional power to the slave power reception unit, resulting in the first and second rectified voltages being unequal; and adjusting operation of the slave power reception unit until the first and second rectified voltages are again equal. A dummy load is connected to the slave power reception unit prior to causing the power transmission circuit to transmit the additional power, and is disconnected once the first and second rectified voltages are equal.

An electrical power system for a vehicle comprising a base powernet and a primary powernet electrically connected to primary safety critical loads. A switch is disposed between the base powernet and the primary powernet. The switch is configured to transition between a closed state that electrically connects the base powernet to the primary powernet and an open state that disconnects the base powernet from the primary powernet.

A converter module is provided with a first power delivery circuit, a second power delivery circuit, and a controller. The first power delivery circuit supplies current from a first direct current (DC) source to a resonant stage in a first direction. The first power delivery circuit comprises at least two first switches. The second power delivery circuit supplies the current from the first DC source to the resonant stage in a second direction, opposite the first direction. The controller includes memory, and a processor that is programmed to: enable the first power delivery circuit and the second power delivery circuit alternately to provide power as a periodic waveform to the resonant stage; and disable the at least two first switches individually in a sequence to generate a phase shift in the periodic waveform and to disable the first power delivery circuit.