The present disclosure relates to an electronic device comprising a first capacitor and a quartz crystal coupled in series between a first node and a second node; an inverter coupled between the first and second nodes; a first variable capacitor coupled between the first node and a third node; and a second variable capacitor coupled between the second node and the third node.

A variable capacitance circuit includes a capacitor array having a first capacitor in which a plurality of MIM capacitors are coupled in parallel and a second capacitor in which a plurality of MIM capacitors are coupled in series, and a switch array having a first switch and a second switch. A shape pattern of at least one of a first electrode of the first capacitor, a first ground shield, a second electrode of the second capacitor, and a second ground shield is set so that a first capacitance difference per 1 LSB between first capacitance values of the first capacitor when the first switch is turned on and off and a second capacitance difference per 1 LSB between second capacitance values of the second capacitor when the second switch is turned on and off are close to each other.

Described is a high Q-factor inductor. The inductor is formed as a unit cell coil, which is copied twice for a dual-coil inductor and copied four times for a quad-coil inductor. For each copy of the unit cell coil, the coil is rotated a subsequent substantially 90 degrees or substantially −90 degrees. The rotation enables the terminals of the inductor to be routed equal-distant to a circuit that is placed in the line of symmetry between the two coils.

The present disclosure relates to an electronic device comprising a first capacitor and a quartz crystal coupled in series between a first node and a second node; an inverter coupled between the first and second nodes; a first variable capacitor coupled between the first node and a third node; and a second variable capacitor coupled between the second node and the third node.

A voltage-controlled oscillator comprises a varactor. A capacitance of the first varactor is dependent upon a control voltage. The voltage-controlled also comprises an inductor. The inductor is connected to a center-tap connection. The voltage-controlled oscillator also comprises a power source. The power source is configured to provide a bias voltage to the inductor through the center-tap connection. The voltage-controlled oscillator also comprises a coupling capacitor. The coupling capacitor is located between the inductor and the varactor. The voltage-controlled oscillator also comprises a coupling resistor. The coupling resistor is located between the coupling capacitor and the center-tap connection. The center-tap connection provides the bias voltage to the coupling capacitor through the coupling resistor.

The application discloses a method, for building an oscillator frequency adjustment lookup table in a transceiver, wherein the transceiver generates a clock according to a crystal oscillator external to the transceiver for transceiving data. The transceiver includes adjustable capacitor arrays assembly connected to the crystal oscillator, wherein when an equivalent capacitance of the adjustable capacitor assembly is a reference value, the crystal oscillator has a reference frequency, and when the equivalent capacitance changes relative to the reference value, the crystal oscillator correspondingly has a frequency offset relative to the reference frequency. The method includes: performing an interpolation operation according to a first value, a second value, and a third value of the equivalent capacitance, and the corresponding frequency variations, so as to obtain the frequency variations corresponding to a first sub-value between the first value and the second values.

A semiconductor device according to the present embodiment includes a plurality of switching elements and a plurality of variable capacitance elements. The switching elements are switching elements connected in series between a first control terminal and a second control terminal and plural types of capacitance control signals can be supplied to the first control terminal and the second control terminal. The variable capacitance elements have capacitance control terminals connected to corresponding one ends of the switching elements, respectively.

A voltage controlled oscillator includes a resonator and an amplifier. The resonator includes a capacitive element and an inductive element. The inductive element has a plurality of conductive segments forming a physical loop. The inductive element has electrical connections on the physical loop to the plurality of conductive segments forming at least one electrical loop disposed within an interior space formed by the physical loop. The amplifier has an input and an output, the input coupled to a first conductive segment forming a first impedance and the output coupled to a second conductive segment forming a second impedance.

A circuit device includes an oscillation circuit. The oscillation circuit includes a first variable capacitance circuit whose capacitance change characteristic with respect to a capacitance control voltage is a positive characteristic and a second variable capacitance circuit whose capacitance change characteristic with respect to the capacitance control voltage is a negative characteristic, and oscillates a resonator. The circuit device further includes a switch circuit. The switch circuit receives a first input voltage at a first input terminal thereof, receives a second input voltage at a second input terminal thereof, outputs a first output voltage selected from a plurality of voltages including the first input voltage and the second input voltage to a first output terminal thereof to which the first variable capacitance circuit is electrically coupled, and outputs a second output voltage selected from the plurality of voltages to a second output terminal thereof to which the second variable capacitance circuit is electrically coupled.

A semiconductor device and a communication circuit capable of reducing the effect of a noise generated in an inductor are provided. A semiconductor device according to an embodiment includes a substrate, a first circuit disposed in a first area of the substrate, a second circuit disposed in a second area of the substrate, the second circuit being configured to operate selectively with the first circuit, a first inductor disposed in the second area and connected to the first circuit, and a second inductor disposed in the first area and connected to the second circuit.