An oscillator circuit includes an oscillator having a source node and a sink node, the oscillator being configured to generate a pulse signal having an output voltage that corresponds to a charging or discharging operation of a capacitor, a first bias current generating circuit coupled to the source and the sink nodes of the oscillator and configured to supply a first bias current to the oscillator, the first bias current being adjustable, and a second bias current generating circuit coupled to the source and the sink nodes of the oscillator and configured to supply a second bias current to the oscillator, the second bias current being adjustable. The first bias current and the second bias current are used to tune a frequency range of the oscillator.

An optoelectronic oscillator (OEO) is disclosed comprising an electronically tunable filter for transposing narrow pass band characteristics of a surface acoustic wave (SAW) filter to a microwave frequency to provide mode selection in the OEO. An OEO is disclosed comprising a set of optical domain components, a downconverter in communication with an output of the optical domain components, and a set of radio frequency (RF) domain components in communication with an output of the downconverter. The set of RF domain components comprises a tunable filter operating at a filter center frequency and having an output coupled to the set of optical domain components for communicating a mode selection result. The tunable filter including a tuner; and a sub-filter. The sub-filter operating at a fixed center frequency to provide mode selection and adjacent mode suppression with respect to the tunable filter center frequency. The sub-filter center frequency being lower than the tunable filter center frequency, and a ratio of the tunable filter center frequency to a bandwidth of the sub-filter being at least 1000:1.

An oscillator circuit includes an oscillator having a source node and a sink node, the oscillator being configured to generate a pulse signal having an output voltage that corresponds to a charging or discharging operation of a capacitor, a first bias current generating circuit coupled to the source and the sink nodes of the oscillator and configured to supply a first bias current to the oscillator, the first bias current being adjustable, and a second bias current generating circuit coupled to the source and the sink nodes of the oscillator and configured to supply a second bias current to the oscillator, the second bias current being adjustable. The first bias current and the second bias current are used to tune a frequency range of the oscillator.

An optoelectronic oscillator (OEO) is disclosed comprising an electronically tunable filter for transposing narrow pass band characteristics of a surface acoustic wave (SAW) filter to a microwave frequency to provide mode selection in the OEO. An OEO is disclosed comprising a set of optical domain components, a downconverter in communication with an output of the optical domain components, and a set of radio frequency (RF) domain components in communication with an output of the downconverter. The set of RF domain components comprises a tunable filter operating at a filter center frequency and having an output coupled to the set of optical domain components for communicating a mode selection result. The tunable filter including a tuner; and a sub-filter. The sub-filter operating at a fixed center frequency to provide mode selection and adjacent mode suppression with respect to the tunable filter center frequency. The sub-filter center frequency being lower than the tunable filter center frequency, and a ratio of the tunable filter center frequency to a bandwidth of the sub-filter being at least 1000:1.

A nano-electro-mechanical systems (NEMS) oscillator can include an insulating substrate, a source electrode and a drain electrode, a metal local gate electrode, and a micron-sized, atomically thin graphene resonator. The source electrode and drain electrode can be disposed on the insulating substrate. The metal local gate electrode can be disposed on the insulating substrate. The graphene resonator can be suspended over the metal local gate electrode and define a vacuum gap between the graphene resonator and the metal local gate electrode.

A nano-electro-mechanical systems (NEMS) oscillator can include an insulating substrate, a source electrode and a drain electrode, a metal local gate electrode, and a micron-sized, atomically thin graphene resonator. The source electrode and drain electrode can be disposed on the insulating substrate. The metal local gate electrode can be disposed on the insulating substrate. The graphene resonator can be suspended over the metal local gate electrode and define a vacuum gap between the graphene resonator and the metal local gate electrode.