An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.

An oscillation element that oscillates an electromagnetic wave includes a negative resistance element and a resonator including a first conductor and a second conductor, in which the negative resistance element and the resonator are arranged on a substrate, the negative resistance element is electrically connected to the first conductor and the second conductor, the first conductor and the second conductor are capacitively coupled to each other, and when a capacitance between the first conductor and the second conductor is set as C, an inductance of the first conductor and the second conductor is set as L.sub.1, a speed of the oscillated electromagnetic wave in vacuum is set as C.sub.0, a relative dielectric constant of the substrate is set as .sub.r, and a diagonal line length of the substrate is set as d, a series resonant frequency f.sub.1 of the resonator satisfies f.sub.1=1/{2(L.sub.1C)}, and f.sub.1<C.sub.0/[d{(1+.sub.r)/2}].

An oscillation element that oscillates an electromagnetic wave includes a negative resistance element and a resonator including a first conductor and a second conductor, in which the negative resistance element and the resonator are arranged on a substrate, the negative resistance element is electrically connected to the first conductor and the second conductor, the first conductor and the second conductor are capacitively coupled to each other, and when a capacitance between the first conductor and the second conductor is set as C, an inductance of the first conductor and the second conductor is set as L.sub.1, a speed of the oscillated electromagnetic wave in vacuum is set as C.sub.0, a relative dielectric constant of the substrate is set as .sub.r, and a diagonal line length of the substrate is set as d, a series resonant frequency f.sub.1 of the resonator satisfies f.sub.1=1/{2(L.sub.1C)}, and f.sub.1<C.sub.0/[d{(1+.sub.r)/2}].

An element, including: a first conductor layer extending in a first direction; a second conductor layer extending in the first direction; and a semiconductor disposed between the first and second conductor layers, the semiconductor including: a first semiconductor layer in contact with the first conductor layer; a second semiconductor layer in contact with the second conductor layer; and an active layer disposed between the first and second semiconductor layers, in which: the semiconductor has a width of 0.5 m or more and 5 m or less in a direction intersecting the first and second directions, and has a thickness of 0.1 m or more and 1.0 m or less in the second direction; the active layer includes a double-barrier resonant tunnel diode; and each of the two barrier layers has a thickness of 0.7 nm or more and 2.0 nm or less in the second direction.

An element, including: a first conductor layer extending in a first direction; a second conductor layer extending in the first direction; and a semiconductor disposed between the first and second conductor layers, the semiconductor including: a first semiconductor layer in contact with the first conductor layer; a second semiconductor layer in contact with the second conductor layer; and an active layer disposed between the first and second semiconductor layers, in which: the semiconductor has a width of 0.5 m or more and 5 m or less in a direction intersecting the first and second directions, and has a thickness of 0.1 m or more and 1.0 m or less in the second direction; the active layer includes a double-barrier resonant tunnel diode; and each of the two barrier layers has a thickness of 0.7 nm or more and 2.0 nm or less in the second direction.

An element includes a coupling line in which a first conductor layer, a dielectric layer, and a second conductor layer are stacked in this order, and which is connected to the second conductor layer in order to mutually synchronize a plurality of antennas at a frequency of a terahertz wave; and a bias line connecting a power supply for supplying a bias signal to a semiconductor layer and the second conductor layer. A wiring layer in which the coupling line is formed and a wiring layer in which the bias line is formed are different layers. The bias line is disposed in a layer between the first conductor layer and the second conductor layer.