A device, comprising: an antenna array provided with a plurality of antennas each having a semiconductor layer having terahertz-wave gain; and a coupling line for mutual frequency-locking of at least two of the antennas at a frequency of the terahertz-wave, wherein the coupling line is connected to a shunt device, and the shunt device is connected in parallel to the semiconductor layer of each of the two antennas.

An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency f.sub.LC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.

An element which oscillates or detects terahertz waves includes a resonance unit including a differential negative resistance element, a first conductor, a second conductor, and a dielectric body, a bias circuit configured to supply a bias voltage to the differential negative resistance element, and a line configured to connect the resonance unit and the bias circuit to each other. The differential negative resistance element and the dielectric body are disposed between the first and second conductors. The line is a low impedance line in a frequency f.sub.LC of resonance caused by inductance of the line and capacitance of the resonance unit using an absolute value of a differential negative resistance of the differential negative resistance element as a reference.

A resistance circuit is configured such that a P-type resistance section and an N-type resistance section are electrically connected in series, the P-type resistance section is configured with P-type diffusion layer resistance elements that are disposed to form a right angle with respect to each other and that are electrically connected in series, and the N-type resistance section is configured with N-type diffusion layer resistance elements that are disposed to form the right angle with respect to each other and that are electrically connected in series. Furthermore, the P-type diffusion layer resistance element is disposed along a <100> orientation direction of a semiconductor substrate, and the N-type diffusion layer resistance element is disposed along a <110> orientation direction of the semiconductor substrate. It is thereby possible to provide the resistance circuit, an oscillation circuit, and an in-vehicle sensor apparatus that reduce stress-induced characteristic fluctuations.

A differential constructive wave oscillator device including a single, continuous differential transmission line that is arranged into first and second parallel traces in the form of a Mobius loop. The continuous transmission line includes first and second crossover points, each of which provides for a point of inflection between the first and second traces. In each stage of the device, both the first and second traces of the transmission line carry the forward traveling wave signal from a differential input port to a differential output port. Each phase includes a differential delay section that provides for a phase shift between a signal on the first trace and a signal on the second trace. Each phase additionally includes a differential feedback amplifier that amplifies the forward traveling wave signal at the differential output port, generates a differential feedback signal, and routes the differential feedback signal to the differential input port.

A differential constructive wave oscillator device including a single, continuous differential transmission line that is arranged into first and second parallel traces in the form of a Mobius loop. The continuous transmission line includes first and second crossover points, each of which provides for a point of inflection between the first and second traces. In each stage of the device, both the first and second traces of the transmission line carry the forward traveling wave signal from a differential input port to a differential output port. Each phase includes a differential delay section that provides for a phase shift between a signal on the first trace and a signal on the second trace. Each phase additionally includes a differential feedback amplifier that amplifies the forward traveling wave signal at the differential output port, generates a differential feedback signal, and routes the differential feedback signal to the differential input port.

An oscillation element that oscillates an electromagnetic wave includes a negative resistance element and a resonator including a first conductor and a second conductor, in which the negative resistance element and the resonator are arranged on a substrate, the negative resistance element is electrically connected to the first conductor and the second conductor, the first conductor and the second conductor are capacitively coupled to each other, and when a capacitance between the first conductor and the second conductor is set as C, an inductance of the first conductor and the second conductor is set as L.sub.1, a speed of the oscillated electromagnetic wave in vacuum is set as C.sub.0, a relative dielectric constant of the substrate is set as .sub.r, and a diagonal line length of the substrate is set as d, a series resonant frequency f.sub.1 of the resonator satisfies f.sub.1=1/{2(L.sub.1C)}, and f.sub.1<C.sub.0/[d{(1+.sub.r)/2}].

An oscillation element that oscillates an electromagnetic wave includes a negative resistance element and a resonator including a first conductor and a second conductor, in which the negative resistance element and the resonator are arranged on a substrate, the negative resistance element is electrically connected to the first conductor and the second conductor, the first conductor and the second conductor are capacitively coupled to each other, and when a capacitance between the first conductor and the second conductor is set as C, an inductance of the first conductor and the second conductor is set as L.sub.1, a speed of the oscillated electromagnetic wave in vacuum is set as C.sub.0, a relative dielectric constant of the substrate is set as .sub.r, and a diagonal line length of the substrate is set as d, a series resonant frequency f.sub.1 of the resonator satisfies f.sub.1=1/{2(L.sub.1C)}, and f.sub.1<C.sub.0/[d{(1+.sub.r)/2}].

Power amplifiers with injection-locked oscillator are provided. In certain configurations, a packaged module includes a package substrate, a semiconductor die attached to the package substrate and having a power amplifier formed thereon, and an output matching network attached to the package substrate and operable to provide output impedance matching to an output of the power amplifier. The power amplifier includes two or more stages electrically coupled between the input and an output, and the two or more stages include an injection-locked oscillator stage that receives a radio frequency input signal and generates an injection-locked radio frequency signal.

Power amplifiers with injection-locked oscillator are provided. In certain configurations, a packaged module includes a package substrate, a semiconductor die attached to the package substrate and having a power amplifier formed thereon, and an output matching network attached to the package substrate and operable to provide output impedance matching to an output of the power amplifier. The power amplifier includes two or more stages electrically coupled between the input and an output, and the two or more stages include an injection-locked oscillator stage that receives a radio frequency input signal and generates an injection-locked radio frequency signal.