Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

To realize a compact device that detects phase or controls phase or an amplitude with high sensitivity, a signal controller includes: a linear conductor having a first end fixed to a negative electrode and a second end serving as a free end; a positive electrode facing the free end with a small gap therebetween; a first signal source that applies a voltage between the negative electrode and the positive electrode, the voltage applied being variable; a driving electrode that applies an electric field to a space around the conductor, the electric field having a component perpendicular to the lengthwise direction of the conductor; and a second signal source that applies an AC signal to the driving electrode. The signal processor can be a device for controlling or modulating phase or amplitude.

To realize a compact device that detects phase or controls phase or an amplitude with high sensitivity, a signal controller includes: a linear conductor having a first end fixed to a negative electrode and a second end serving as a free end; a positive electrode facing the free end with a small gap therebetween; a first signal source that applies a voltage between the negative electrode and the positive electrode, the voltage applied being variable; a driving electrode that applies an electric field to a space around the conductor, the electric field having a component perpendicular to the lengthwise direction of the conductor; and a second signal source that applies an AC signal to the driving electrode. The signal processor can be a device for controlling or modulating phase or amplitude.

Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.

Disclosed are various embodiments of a terahertz wave modulator. The wave modulator can include one or more layers of piezoelectric/ferroelectric single crystal or polycrystalline material. The crystalline material can be configured to resonate when a low-energy external excitation is applied. An incident terahertz waveform can be dynamically controlled when the incident terahertz waveform interacts with the at least one layer of piezoelectric crystalline material while the at least one layer of piezoelectric crystalline material is resonating. The dynamic control of the incident terahertz waveform can be with respect to at least one of a phase shift and an amplitude modulation of the waveform.