Tunneling field effect transistors and fabrication methods thereof are provided, which include: an integrated circuit device which includes a circuit input configured to receive an input voltage and a circuit output configured to deliver an output current. The integrated circuit also includes a circuit element having at least one tunneling field effect transistor (TFET). The circuit element connects the circuit input to the circuit output and is characterized by a V-shaped current-voltage diagram. The V-shaped current-voltage diagram describes the relationship between the input voltage of the circuit input and the output current of the circuit output.

Tunneling field effect transistors and fabrication methods thereof are provided, which include: an integrated circuit device which includes a circuit input configured to receive an input voltage and a circuit output configured to deliver an output current. The integrated circuit also includes a circuit element having at least one tunneling field effect transistor (TFET). The circuit element connects the circuit input to the circuit output and is characterized by a V-shaped current-voltage diagram. The V-shaped current-voltage diagram describes the relationship between the input voltage of the circuit input and the output current of the circuit output.