A phase and/or amplitude modulation device includes a TORP signal generator and, during a phase modulation or a phase and amplitude modulation, a generator of a phase-modulated periodic signal of frequency F.sub.PRP applied to a control input of the power supply circuit of the TORP signal generator. The device may also include, during an amplitude modulation or a phase and amplitude modulation, 2.sup.P TORP generators, a thermometric code generator on 2.sup.P bits coding an amplitude modulation, a TORP generator control circuit, applying or not, to the control input of the TORP generator power supply, the periodic signal of frequency F.sub.PRP depending on the bits of the thermometric code signal, and a processing circuit coupled to the outputs of the TORP generators, and configured to produce a linear combination of signals outputted by the TORP generators.

Phase and/or amplitude modulation device, comprising a TORP signal generator, and further including, during a phase modulation or a phase and amplitude modulation, a generator of a phase-modulated periodic signal of frequency F.sub.PRP applied to a control input of the power supply circuit of the TORP generator, and/or including, during an amplitude modulation or a phase and amplitude modulation: 2.sup.P TORP generators, a thermometric code generator on 2.sup.P bits coding an amplitude modulation, a TORP generator control circuit, applying or not, to the control input of the TORP generator power supply, the periodic signal of frequency F.sub.PRP depending on the bits of the thermometric code signal, and a processing circuit coupled to the outputs of the TORP generators, and configured to produce a linear combination of signals outputted by the TORP generators.

An oscillator circuit includes a total of N (N2) class-D oscillator circuits stacked together between a supply voltage node and a reference voltage node. The output ports of adjacent class-D oscillator circuits in the disclosed oscillator circuit are coupled together by capacitors to ensure frequency and phase synchronization for the frequency signals generated by the class-D oscillator circuits. Compared with a reference oscillator circuit formed of a single class-D oscillator circuit, the oscillation amplitude of each of the class-D oscillator circuits in the disclosed oscillator circuit is 1/N of that of the reference oscillator circuit, and the current consumption of the disclosed oscillator circuit is 1/N of that of the reference oscillator circuit.

A commutating circuit includes a single-ended mixer and a passive network. The single-ended mixer includes a differential local oscillator terminal. The passive network includes a plurality of inductors and a capacitor. The plurality of inductors can be coupled to the differential local oscillator terminal. The plurality of inductors can provide an impedance in accordance with a common mode or a differential mode. The commutating circuit can be implemented via a device, a system and/or a method.

Tunneling field effect transistors and fabrication methods thereof are provided, which include: an integrated circuit device which includes a circuit input configured to receive an input voltage and a circuit output configured to deliver an output current. The integrated circuit also includes a circuit element having at least one tunneling field effect transistor (TFET). The circuit element connects the circuit input to the circuit output and is characterized by a V-shaped current-voltage diagram. The V-shaped current-voltage diagram describes the relationship between the input voltage of the circuit input and the output current of the circuit output.

A commutating circuit includes a single-ended mixer and a passive network. The single-ended mixer includes a differential local oscillator terminal. The passive network includes a plurality of inductors and a capacitor. The plurality of inductors can be coupled to the differential local oscillator terminal. The plurality of inductors can provide an impedance in accordance with a common mode or a differential mode. The commutating circuit can be implemented via a device, a system and/or a method.

Tunneling field effect transistors and fabrication methods thereof are provided, which include: an integrated circuit device which includes a circuit input configured to receive an input voltage and a circuit output configured to deliver an output current. The integrated circuit also includes a circuit element having at least one tunneling field effect transistor (TFET). The circuit element connects the circuit input to the circuit output and is characterized by a V-shaped current-voltage diagram. The V-shaped current-voltage diagram describes the relationship between the input voltage of the circuit input and the output current of the circuit output.

Tunneling field effect transistors and fabrication methods thereof are provided, which include: obtaining a gate structure disposed over a substrate structure; and providing a source region and a drain region within the substrate structure separated by a channel region, the channel region underlying, at least partially, the gate structure, and the providing including: modifying the source region to attain a narrowed source region bandgap; and modifying the drain region to attain a narrowed drain region bandgap, the narrowed source region bandgap and the narrowed drain region bandgap facilitating quantum tunneling of charge carriers from the source region or the drain region to the channel region. Devices including digital modulation circuits with one or more tunneling field effect transistor(s) are also provided.