An active metamaterial array of the present disclosure includes: a substrate; a plurality of metamaterial structures disposed on the substrate and spaced apart from each other; a conductivity variable material layer formed between each of the plurality of the metamaterial structures so as to selectively connect the metamaterial structures; an electrolyte material layer formed on the metamaterial structures and the conductivity variable material layer; and a gate electrode disposed at one end of the substrate so as to be in contact with one region of the electrolyte material layer, and when an external voltage is applied to the gate electrode, the gate electrode changes the conductivity of the conductivity variable material layer by controlling the migration of ions contained in the electrolyte material layer.

A system for EMNZ metamaterial-based direct antenna modulation. The system includes a signal generator, a metamaterial switch and an antenna. The signal generator may is configured to generate a microwave signal. The metamaterial switch is configured to generate a modulated microwave signal from the microwave signal. The modulated microwave signal is generated by selectively passing the microwave signal through the metamaterial switch. The metamaterial switch includes a first conductive plate and a first loaded conductive plate. The first loaded conductive plate includes a second conductive plate and a first monolayer graphene. The first monolayer graphene includes a first tunable conductivity. The first monolayer graphene is positioned between the first conductive plate and the second conductive plate. An effective permittivity of the metamaterial switch is configured to be adjusted to a predetermined value. The effective permittivity of the metamaterial switch is adjusted responsive to tuning the first tunable conductivity.

A terahertz wave fast modulator based on coplanar waveguide combining with transistor is disclosed. The terahertz waves are inputted through a straight waveguide structure, and then are coupled through a probe structure onto a core part of the present invention, which includes a suspended coplanar waveguide structure and a modulation unit with high electron mobility transistor, wherein the suspended coplanar waveguide structure is formed by three metal wires and a semiconductor substrate; and the modulation unit with high electron mobility transistor is located between adjacent metal transmission strips of the coplanar waveguide structure. Transmission characteristics of the terahertz waves in the coplanar waveguide structure are changed through the switching on/off of the modulation unit, so as to fast modulate the amplitudes and phases of the terahertz waves, and finally the modulated terahertz waves are transmitted through a probe—waveguide structure.

This application discloses a variable capacitor, a reflection-type phase shifter, and a semiconductor device, which relate to the technical field of electronics, so as to resolve the problem that a capacitance value of a variable capacitor is sensitive to changes in PVT. The variable capacitor includes: a first comb structure and a first set of fingers, where the first comb structure includes a plurality of comb teeth, the first set of fingers includes at least one finger, and the finger in the first set of fingers is disposed between at least two comb teeth of the first comb structure, without electrical contact; a second comb structure and a second set of fingers, where the second comb structure includes a plurality of comb teeth.

A system for EMNZ metamaterial-based direct antenna modulation. The system includes a signal generator, a metamaterial switch and an antenna. The signal generator may is configured to generate a microwave signal. The metamaterial switch is configured to generate a modulated microwave signal from the microwave signal. The modulated microwave signal is generated by selectively passing the microwave signal through the metamaterial switch. The metamaterial switch includes a first conductive plate and a first loaded conductive plate. The first loaded conductive plate includes a second conductive plate and a first monolayer graphene. The first monolayer graphene includes a first tunable conductivity. The first monolayer graphene is positioned between the first conductive plate and the second conductive plate. An effective permittivity of the metamaterial switch is configured to be adjusted to a predetermined value. The effective permittivity of the metamaterial switch is adjusted responsive to tuning the first tunable conductivity.

A high-electron mobility transistor (HEMT) array terahertz wave modulator loaded in a waveguide is provided, which belongs to the technical field of electromagnetic functional devices and focuses on fast dynamic functional devices in the terahertz band. The device comprises a waveguide cavity and a modulation chip. The modulation chip comprises a semiconductor material substrate, a heterostructure material epitaxial layer, an artificial microstructure, and a socket circuit. The applied voltage controls the distribution change of the two-dimensional electron gas in the HEMT, which in turn controls the resonance mode conversion in the artificial microstructure, thereby control the transmission of electromagnetic waves in the waveguide. The modulator has a modulation depth of up to 96% and a modulation rate above 2 GHz.

One aspect of the present disclosure provides a terahertz-wave detector including a semiconductor substrate, an active element formed on the semiconductor substrate and a first resistive portion electrically connected in parallel with the active element.

A system for EMNZ metamaterial-based direct antenna modulation. The system includes a signal generator, a metamaterial switch and an antenna. The signal generator may is configured to generate a microwave signal. The metamaterial switch is configured to generate a modulated microwave signal from the microwave signal. The modulated microwave signal is generated by selectively passing the microwave signal through the metamaterial switch. The metamaterial switch includes a first conductive plate and a first loaded conductive plate. The first loaded conductive plate includes a second conductive plate and a first monolayer graphene. The first monolayer graphene includes a first tunable conductivity. The first monolayer graphene is positioned between the first conductive plate and the second conductive plate. An effective permittivity of the metamaterial switch is configured to be adjusted to a predetermined value. The effective permittivity of the metamaterial switch is adjusted responsive to tuning the first tunable conductivity.

A system for EMNZ metamaterial-based direct antenna modulation. The system includes a signal generator, a metamaterial switch and an antenna. The signal generator may is configured to generate a microwave signal. The metamaterial switch is configured to generate a modulated microwave signal from the microwave signal. The modulated microwave signal is generated by selectively passing the microwave signal through the metamaterial switch. The metamaterial switch includes a first conductive plate and a first loaded conductive plate. The first loaded conductive plate includes a second conductive plate and a first monolayer graphene. The first monolayer graphene includes a first tunable conductivity. The first monolayer graphene is positioned between the first conductive plate and the second conductive plate. An effective permittivity of the metamaterial switch is configured to be adjusted to a predetermined value. The effective permittivity of the metamaterial switch is adjusted responsive to tuning the first tunable conductivity.

An active metamaterial array of the present disclosure includes: a substrate; a plurality of metamaterial structures disposed on the substrate and spaced apart from each other; a conductivity variable material layer formed between each of the plurality of the metamaterial structures so as to selectively connect the metamaterial structures; an electrolyte material layer formed on the metamaterial structures and the conductivity variable material layer; and a gate electrode disposed at one end of the substrate so as to be in contact with one region of the electrolyte material layer, and when an external voltage is applied to the gate electrode, the gate electrode changes the conductivity of the conductivity variable material layer by controlling the migration of ions contained in the electrolyte material layer.