Patent classifications
H03F1/30
Power amplifier circuitry
Disclosed is power amplifier circuitry having a bipolar junction power transistor with a base, a collector, and an emitter. The power amplifier circuitry includes bias correction sub-circuitry configured to generate a compensation current substantially opposite in phase and substantially equal in magnitude to an error current passed by a parasitic base-collector capacitance inherently coupled between the base and collector, wherein the bias correction sub-circuitry has a compensation output coupled to the base and through which the compensation current flows to substantially cancel the error current.
RECEIVER CONTROL CIRCUIT AND TERMINAL
Disclosed are a receiver control circuit and a terminal. The receiver control circuit includes: a smart power amplifier module, a coder-decoder, and a receiver. The smart power amplifier module is electrically connected to the receiver by a first switch module. The first switch module includes a first switch component unit that is formed by a metal oxide semiconductor field-effect transistor (MOSFET). The first switch module further includes a first follower unit, where the first follower unit is configured to keep an unchanged voltage difference between a gate electrode of the MOSFET of the first switch component unit and a drain electrode thereof, and a gate electrode voltage of the MOSFET of the first switch component unit is greater than a drain electrode voltage thereof. The coder-decoder is electrically connected to the receiver by the second switch module. The second switch module includes a second switch component unit.
VARIABLE GAIN AMPLIFIER WITH TEMPERATURE COMPENSATED GAIN
An amplifier with temperature compensation where the amplifier has transistors configured to amplify a received signal to create an amplified signal. The amplifier gain changes over temperature. A gain control circuit, connected to the amplifier, that adjusts the amplifier gain responsive to a gain control signal. A temperature compensation circuit includes numerous elements. A constant current source that generates a constant current which is used to create a constant voltage. A temperature dependent current source that generates a temperature dependent current which is used to create a temperature dependent voltage, such that the temperature dependent current source has an inverse temperature dependance as compared to the amplifier. An operational amplifier compares the constant voltage to the temperature dependent voltage and generates an offset signal which varies over temperature. A gated buffer is configured to receive the offset signal and responsive thereto, selectively modify the gain control signal.
VARIABLE GAIN AMPLIFIER WITH TEMPERATURE COMPENSATED GAIN
An amplifier with temperature compensation where the amplifier has transistors configured to amplify a received signal to create an amplified signal. The amplifier gain changes over temperature. A gain control circuit, connected to the amplifier, that adjusts the amplifier gain responsive to a gain control signal. A temperature compensation circuit includes numerous elements. A constant current source that generates a constant current which is used to create a constant voltage. A temperature dependent current source that generates a temperature dependent current which is used to create a temperature dependent voltage, such that the temperature dependent current source has an inverse temperature dependance as compared to the amplifier. An operational amplifier compares the constant voltage to the temperature dependent voltage and generates an offset signal which varies over temperature. A gated buffer is configured to receive the offset signal and responsive thereto, selectively modify the gain control signal.
Power amplifier
A power amplifier circuit includes a current generator and a current mirror driver. The current generator has a first input connected to a first voltage supply and an output configured to generate a first current. The current generator includes a first transistor, a second transistor, a first resistor and a second resistor. The first transistor has an emitter connected to ground. The second transistor has a base connected to a base of the first transistor and an emitter connected to ground. The first resistor is connected between the first voltage supply and a collector of the first transistor. The second resistor is connected between the first voltage supply and a collector of the second transistor. The current mirror drive has a first input connected to the output of the current generator to receive the first current and an output configured to generate a second current.
COMPENSATION OF TRAPPING IN FIELD EFFECT TRANSISTORS
A circuit includes a field effect transistor (FET), a reference transistor having an output coupled to an output of the FET, an active bias circuit coupled to the reference transistor and configured to generate an input signal for the reference transistor in response to a change in drain current of the reference transistor due to carrier trapping and to apply the input signal to an input of the reference transistor, and a summing node coupled to an input of the FET and to the input of the reference transistor. The summing node adds the input signal to an input signal of the FET to compensate the carrier trapping effect.
Programmable driver for frequency mixer
The disclosure relates to technology for shifting a frequency range of a signal. In one aspect, a circuit comprises a frequency mixer, a frequency synthesizer configured to generate an oscillator signal, a programmable driver, and a controller. The programmable driver is configured to receive the oscillator signal from the frequency synthesizer and to provide the oscillator signal to the oscillator input of the frequency mixer. The programmable driver is configured to have a variable drive strength. The controller is configured to control the drive strength of the programmable driver based on a frequency of the oscillator signal to adjust a rise time and a fall time of the oscillator signal at the oscillator input of the frequency mixer.
Programmable driver for frequency mixer
The disclosure relates to technology for shifting a frequency range of a signal. In one aspect, a circuit comprises a frequency mixer, a frequency synthesizer configured to generate an oscillator signal, a programmable driver, and a controller. The programmable driver is configured to receive the oscillator signal from the frequency synthesizer and to provide the oscillator signal to the oscillator input of the frequency mixer. The programmable driver is configured to have a variable drive strength. The controller is configured to control the drive strength of the programmable driver based on a frequency of the oscillator signal to adjust a rise time and a fall time of the oscillator signal at the oscillator input of the frequency mixer.
DOHERTY AMPLIFIER CIRCUITS
A Doherty amplifier circuit comprising: a splitter having: a splitter-input-terminal for receiving an input signal; a main-splitter-output-terminal; and a peaking-splitter-output-terminal; a main-power-amplifier having a main-power-input-terminal and a main-power-output-terminal, wherein; the main-power-input-terminal is connected to the main-splitter-output-terminal; and the main-power-output-terminal is configured to provide a main-power-amplifier-output-signal; a peaking-power-amplifier having a peaking-power-input-terminal and a peaking-power-output-terminal, wherein: the peaking-power-input-terminal is connected to the peaking-splitter-output-terminal; and the peaking-power-output-terminal is configured to provide a peaking-power-amplifier-output-signal. The splitter, the main-power-amplifier and the peaking-power-amplifier are provided by means of an integrated circuit.
FLIP CHIP CIRCUIT
A flip chip circuit comprising: a semiconductor substrate; a power amplifier provided on the semiconductor substrate; and a metal pad configured to receive an electrically conductive bump for connecting the flip chip to external circuitry. At least a portion of the power amplifier is positioned directly between the metal pad and the semiconductor substrate.