A method for generating a constant current. The method can include receiving an input voltage at a voltage input connected to a resistor pair, the resistor pair including a first resistor and a second resistor, the first resistor having a positive temperature coefficient and the second resistor having a negative temperature coefficient. The first and second resistors can be configured such that the variability of resistance over temperature of the first resistor and the variability of resistance over temperature of the second resistor cancel to produce a zero temperature coefficient for the resistor pair. The method can further include applying the input voltage to the resistor pair to generate a current with a zero temperature coefficient.

According to at least one example of the disclosure, a power amplifier system is provided comprising an amplifying transistor configured to amplify a radio frequency signal, a bias circuit configured to provide a bias voltage to the amplifying transistor, and a clamp circuit for protecting the power amplifier system by absorbing a current flowing through the amplifying transistor when the clamp circuit is switched on. The clamp circuit is connected at a bias node between the bias circuit and the amplifying transistor and includes a clamp transistor and a clamp diode, the clamp diode having one end connected to a collector of the clamp transistor at the bias node and another end connected to a base of the clamp transistor.

Systems and apparatuses are disclosed that include a distributed power system configured to provide power to a number of loads. The system includes power converters configured to receive DC power from a common power source, each of the plurality of power converters configured to provide DC power to a corresponding load from. Each of the power converters is positioned proximal to the corresponding load that it powers.

Systems and apparatuses are disclosed that include a distributed power system configured to provide power to a number of loads. The system includes power converters configured to receive DC power from a common power source, each of the plurality of power converters configured to provide DC power to a corresponding load from. Each of the power converters is positioned proximal to the corresponding load that it powers.

Monolithic microwave integrated circuits (MMICs) tolerant to electrical overstress are provided. In certain embodiments, a MMIC includes a signal pad that receives a radio frequency (RF) signal, and an RF circuit coupled to the RF signal pad. The RF circuit includes a transistor layout, an input field-effect transistor (FET) implemented using a first portion of a plurality of gate fingers of the transistor layout, and an embedded protection device electrically connected between a gate and a source of the input FET and implemented using a second portion of the plurality of gate fingers. The MMIC is tolerant to electrical overstress events, such as field-induced charged-device model (FICDM) events.

A peak detector for a power amplifier is provided that includes a threshold voltage detector configured to pulse a detection current in response to an amplified output signal from the amplifier exceeding a peak threshold. A plurality of such peak detectors may be integrated with a corresponding plurality of power amplifiers in a transmitter. Should any peak detector assert an alarm signal or more than a threshold number of alarm signals during a given period, a controller reduces a gain for the plurality of power amplifiers.

The present disclosure relates to circuitry comprising: amplifier circuitry configured to receive a variable supply voltage, wherein the supply voltage varies according to an output signal of the amplifier circuitry; monitoring circuitry configured to monitor one or more parameters of an output signal of the amplifier circuitry; and processing circuitry configured to receive an indication of the voltage of the variable supply voltage and an indication of the monitored parameters from the monitoring circuitry and to apply a correction to one or more of the monitored parameters to compensate for coupling between the variable supply voltage and the monitoring circuitry.

A power amplifier may be configured to operate in an on state and an off state. The power amplifier may include a plurality of transistors and an impedance controller circuit. The plurality of transistors may be electrically coupled to an electrical ground and an output of the power amplifier. The impedance controller circuit may be electrically coupled to the plurality of transistors and a reference voltage. The impedance controller circuit may be configured to provide the reference voltage to the plurality of transistors when the power amplifier is in the off state to cause a leakage current to flow between the reference voltage and the electrical ground.

A semiconductor device (1) according to the present disclosure includes: an n-channel depletion-mode transistor (10); an input matching circuit inside which the gate terminal (11) and the ground terminal (22) are DC-connected; a self-bias circuit (26) including a resistor (14) biasing the transistor (10) by a voltage drop due to a current flowing through the resistor (14), and a capacitor (15) connected in parallel to the resistor 14) and regarded as short-circuit at a frequency of the high-frequency power; and a diode (31) having an endmost anode connected to the source terminal (12) and an endmost cathode connected to the ground terminal (22), and connected in one stage or connected in series in a plurality of stages in the same direction.

A semiconductor device (1) according to the present disclosure includes: an n-channel depletion-mode transistor (10); an input matching circuit inside which the gate terminal (11) and the ground terminal (22) are DC-connected; a self-bias circuit (26) including a resistor (14) biasing the transistor (10) by a voltage drop due to a current flowing through the resistor (14), and a capacitor (15) connected in parallel to the resistor 14) and regarded as short-circuit at a frequency of the high-frequency power; and a diode (31) having an endmost anode connected to the source terminal (12) and an endmost cathode connected to the ground terminal (22), and connected in one stage or connected in series in a plurality of stages in the same direction.