Components of a power amplifier controller may support lower voltages than the power amplifier itself. As a result, a surge protection circuit that prevents a power amplifier from being damaged due to a power surge may not effectively protect the power amplifier controller. Embodiments disclosed herein present an overvoltage protection circuit that prevents a charge-pump from providing a voltage to a power amplifier controller during a detected surge event. By separately detecting and preventing a voltage from being provided to the power amplifier controller during a surge event, the power amplifier controller can be protected regardless of whether the surge event results in a voltage that may damage the power amplifier. Further, embodiments of the overvoltage protection circuit can prevent a surge voltage from being provided to a power amplifier operating in 2G mode.

Components of a power amplifier controller may support lower voltages than the power amplifier itself. As a result, a surge protection circuit that prevents a power amplifier from being damaged due to a power surge may not effectively protect the power amplifier controller. Embodiments disclosed herein present an overvoltage protection circuit that prevents a charge-pump from providing a voltage to a power amplifier controller during a detected surge event. By separately detecting and preventing a voltage from being provided to the power amplifier controller during a surge event, the power amplifier controller can be protected regardless of whether the surge event results in a voltage that may damage the power amplifier. Further, embodiments of the overvoltage protection circuit can prevent a surge voltage from being provided to a power amplifier operating in 2G mode.

Integrated circuits, such as power amplifier integrated circuits, are disclosed containing compact-footprint, vertically-integrated capacitor-avalanche diode (AD) structures. In embodiments, the integrated circuit includes a semiconductor substrate, a metal layer system, and a vertically-integrated capacitor-AD structure. The metal layer system includes, in turn, a body of dielectric material in which a plurality of patterned metal layers are located. The vertically-integrated capacitor-AD structure includes a first AD formed, at least in part, by patterned portions of the first patterned metal layer. A first metal-insulator-metal (MIM) capacitor is also formed in the metal layer system and at least partially overlaps with the first AD, as taken along a vertical axis orthogonal to the principal surface of the semiconductor substrate. In certain instances, at least a majority, if not the entirety of the first AD vertically overlaps with the first MIM capacitor, by surface area, as taken along the vertical axis.

A biased-transistor-module comprising: a module-input-terminal; a module-output-terminal; a reference-terminal; a module-supply-terminal configured to receive a supply voltage; a module-reference-voltage-terminal configured to receive a module reference voltage; a main-transistor having a main-control-terminal, a main-first-conduction-channel-terminal and a main-second-conduction-channel-terminal, wherein the main-first-conduction-channel-terminal is connected to the module-output-terminal, and the main-second-conduction-channel-terminal is connected to the reference-terminal, and the main-control-terminal is connected to an input-signal-node, wherein the input-signal-node is connected to the module-input-terminal; and a bias-circuit. The bias-circuit comprises: a first-bias-transistor; a first-bias-resistor; a second-bias-transistor; and a second-bias-resistor.

A protection and attenuation circuit for sensitive AC loads is described. The circuit provides AC power protection and attenuation utilizing high-efficiency switch-mode techniques to attenuate an AC power signal by incorporating a bidirectional, transistorized switch driven from a pulse width modulation signal, PWM. The circuit monitors characteristics of the AC power signal driving a known load and characteristics of the load or other elements and determines the duty cycle of the pulse width modulated signal, PWM, based upon the duration and amplitude of the over-voltage, over-current, over-limit or other event.

A protection and attenuation circuit for sensitive AC loads is described. The circuit provides AC power protection and attenuation utilizing high-efficiency switch-mode techniques to attenuate an AC power signal by incorporating a bidirectional, transistorized switch driven from a pulse width modulation signal, PWM. The circuit monitors characteristics of the AC power signal driving a known load and characteristics of the load or other elements and determines the duty cycle of the pulse width modulated signal, PWM, based upon the duration and amplitude of the over-voltage, over-current, over-limit or other event.

An output stage of an operational amplifier includes a low voltage (LV) metal oxide semiconductor (MOS) device and a dynamic current limit circuit. An output current of the operational amplifier flows through the LV MOS device. The dynamic current limit circuit is configured to sense a drain voltage of the LV MOS device and increase a clamping voltage for the LV MOS device when the drain voltage of the LV MOS device is less than a threshold voltage.

An output stage of an operational amplifier includes a low voltage (LV) metal oxide semiconductor (MOS) device and a dynamic current limit circuit. An output current of the operational amplifier flows through the LV MOS device. The dynamic current limit circuit is configured to sense a drain voltage of the LV MOS device and increase a clamping voltage for the LV MOS device when the drain voltage of the LV MOS device is less than a threshold voltage.

An apparatus for amplifying an audio source includes a speaker and a chip. The chip includes a processor configured to generate a signal and an amplifier element configured to amplify the signal into an amplified signal. The chip further includes a current monitor configured to monitor the current of the amplified signal prior to the amplified signal being output from the chip to the speaker and a voltage monitor configured to monitor the voltage of the amplified signal prior to the amplified signal being output from the chip to the speaker. The processor of the chip is configured to control a power of the amplified signal output from the chip to the speaker based at least on the current and the voltage.

A semiconductor device includes a semiconductor chip that has a main surface, a device region that is demarcated at the main surface, a differential amplifier that is formed in the device region and that amplifies and outputs a differential signal input to the differential amplifier, an insulation layer that covers the device region on the main surface, and a shield electrode that is incorporated in the insulation layer such as to conceal the device region in a plan view and that is fixed to a ground potential.