A switch element includes a source having a plurality of source fingers and a drain having a plurality of drain fingers interleaved with the source fingers. An active mesa region is defined between at least one of the plurality of source fingers and an adjacent at least one of the plurality of drain fingers. A plurality of gates are disposed between the at least one of the plurality of source fingers and the adjacent at least one of the plurality of drain fingers. At least one of gates extends into the active mesa region from outside of the active mesa region and terminates within the active mesa region.

A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electronic device, and the like are provided. The semiconductor device includes a capacitor, a first amplifier circuit including a first output terminal electrically connected to a first electrode of the capacitor, and a second amplifier circuit including an input terminal, a second output terminal, a first transistor, and a second transistor; a second electrode of the capacitor is electrically connected to the input terminal; the input terminal is electrically connected to a gate of the first transistor and one of a source and a drain of the second transistor; one of a source and a drain of the first transistor is electrically connected to the second output terminal; the second transistor has a function of supplying a potential to the input terminal and holding the potential; and a channel formation region of the second transistor includes a metal oxide containing at least one of indium and gallium.

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.

Embodiments of the present disclosure provide a circuit structure. An error amplifier of the structure includes an input terminal coupled to a voltage source, a reference terminal, and an output terminal coupled to a back-gate terminal of a power amplifier. A voltage at the output terminal of the error amplifier indicates a voltage difference between the input terminal and the reference terminal. A logarithmic current source may be coupled to the reference terminal of the error amplifier, the logarithmic current being configured to generate a reference current logarithmically proportionate to a voltage level of the voltage source. A plurality of serially coupled transistor cells, having a shared substrate and coupled between the reference terminal of the error amplifier and ground, each may include a back-gate terminal coupled to the output terminal of the error amplifier.

Embodiments of the present disclosure provide a circuit structure. An error amplifier of the structure includes an input terminal coupled to a voltage source, a reference terminal, and an output terminal coupled to a back-gate terminal of a power amplifier. A voltage at the output terminal of the error amplifier indicates a voltage difference between the input terminal and the reference terminal. A logarithmic current source may be coupled to the reference terminal of the error amplifier, the logarithmic current being configured to generate a reference current logarithmically proportionate to a voltage level of the voltage source. A plurality of serially coupled transistor cells, having a shared substrate and coupled between the reference terminal of the error amplifier and ground, each may include a back-gate terminal coupled to the output terminal of the error amplifier.

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.

Thermally-sensitive structures and methods for sensing the temperature in a region of a FET during device operation are described. The region may be at or near a region of highest temperature achieved in the FET. Metal resistance thermometry (MRT) can be implemented with gate or source structures to evaluate the temperature of the FET.

A novel comparison circuit, a novel amplifier circuit, a novel battery control circuit, a novel battery protection circuit, a power storage device, a semiconductor device, an electronic device, and the like are provided. The semiconductor device includes a capacitor, a first amplifier circuit including a first output terminal electrically connected to a first electrode of the capacitor, and a second amplifier circuit including an input terminal, a second output terminal, a first transistor, and a second transistor; a second electrode of the capacitor is electrically connected to the input terminal; the input terminal is electrically connected to a gate of the first transistor and one of a source and a drain of the second transistor; one of a source and a drain of the first transistor is electrically connected to the second output terminal; the second transistor has a function of supplying a potential to the input terminal and holding the potential; and a channel formation region of the second transistor includes a metal oxide containing at least one of indium and gallium.

Techniques for linearizing a field effect transistor (FET) are provided. In an example, a method can include averaging a voltage at a drain node of the FET and a voltage at a source node of the FET to provide an average voltage, and applying the average voltage to a gate node of the FET.