Aspects of the disclosure relate to a radio frequency phase shifter. An example includes an amplification stage to produce an amplified voltage, the amplification stage having a first amplifier with a first input coupled to a first output of a hybrid coupler and a second amplifier with a complementary second input coupled to a complementary second output of the hybrid coupler. A vector modulation stage coupled to the amplification stage receives the amplified voltage and produces a modulated vector, the vector modulation stage has an in-phase section and a quadrature section to control the phase of the modulated vector in response to a phase control signal. A varactor coupled across the first input and the second input of the amplification stage adjusts the capacitance between the first input and the second input in response to a capacitance control signal.

A Doherty amplifier circuit comprising: a splitter having: a splitter-input-terminal for receiving an input signal; a main-splitter-output-terminal; and a peaking-splitter-output-terminal; a main-power-amplifier having a main-power-input-terminal and a main-power-output-terminal, wherein; the main-power-input-terminal is connected to the main-splitter-output-terminal; and the main-power-output-terminal is configured to provide a main-power-amplifier-output-signal; a peaking-power-amplifier having a peaking-power-input-terminal and a peaking-power-output-terminal, wherein: the peaking-power-input-terminal is connected to the peaking-splitter-output-terminal; and the peaking-power-output-terminal is configured to provide a peaking-power-amplifier-output-signal. The splitter, the main-power-amplifier and the peaking-power-amplifier are provided by means of an integrated circuit.

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

Examples disclosed herein relate to a dynamic supply modulation power amplifier architecture for millimeter wave applications. The architecture includes phase shifters coupled to a power input port, power amplifiers coupled to respective power output ports, variable gain amplifiers coupled to the phase shifters and to the power amplifiers and are configured to supply dynamically varying input power to the power amplifiers. The architecture includes a first look-up table coupled to the variable gain amplifiers to control the variable gain amplifiers. The architecture also includes a second look-up table coupled to the power amplifiers, where each of the power amplifiers is supply modulated by active drain voltage modulation controlled by the second look-up table and variable input power from the variable gain amplifiers. Other examples disclosed herein include a radar system for use in an autonomous driving vehicle and an analog beamforming antenna for millimeter wave applications.

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

A sensor amplifier arrangement includes an amplifier having a signal input to receive a sensor signal and a signal output, and a feedback path that couples the signal output to the signal input, wherein the feedback path includes an anti-parallel circuit of diodes, and a voltage divider including a first and a second divider resistor and a voltage divider tap between the first and the second divider resistor, wherein the voltage divider couples the signal output to a reference potential terminal, and the voltage divider tap is coupled to the anti-parallel circuit of diodes and the anti-parallel circuit of diodes is coupled to the signal input.

A tunable matching circuit for use with ultra-low power RF receivers is described to support a variety of RF communication bands. A switched-capacitor array and a switched-resistor array are used to adjust the input impedance presented by the operating characteristics of transistors in an ultra-low-power mode. An RF sensor may be used to monitor performance of the tunable matching circuit and thereby determine optimal setting of the digital control word that drives the switched-capacitor array and switched-resistor array. An effective match over a significant bandwidth is achievable. The optimal matching configuration may be updated at any time to adjust to changing operating conditions. Memory may be used to store the optimal matching configurations of the switched capacitor array and switched resistor array.

A semiconductor device includes first member that includes a switch made of a semiconductor element made from an elemental semiconductor. The first member is joined to a second member including a radio-frequency circuit including a semiconductor element made from a compound semiconductor. The switch and the radio-frequency circuit are connected by a path. The path includes an inter-member connection wire made of a metal pattern arranged on an interlayer insulating film extending from a surface of the second member to a surface of the first member or a conductive member allowing a current to flow in a direction crossing an interface where the first member and the second member are joined.

Methods related to amplification of radio-frequency signals. In some embodiments, a method for amplifying a radio-frequency signal can include configuring a gain stage to be in a selected one of a plurality of gain settings, with at least some of the gain settings resulting in different phases for the radio-frequency signal. The method can further include adjusting the phase of the radio-frequency signal for the selected gain setting, such that the adjusted phase is part of desired phases adjusted from the different phases.

The application discloses a circuit, including: a positive-terminal p-type transistor; a negative-terminal p-type transistor; a positive-terminal n-type transistor, wherein the positive-terminal p-type transistor and the positive-terminal n-type transistor are cascoded between a first reference voltage and a second reference voltage; a negative-terminal n-type transistor, wherein the negative-terminal p-type transistor and the negative-terminal n-type transistor are cascoded between the first reference voltage and the second reference voltage; a first positive-terminal capacitor, a top plate of the first positive-terminal capacitor is coupled to a gate of the positive-terminal n-type transistor; a first negative-terminal capacitor, a top plate of the first negative-terminal capacitor is coupled to a gate of the negative-terminal n-type transistor; a first control circuit, arranged to generate a first control signal to bottom plates of the first positive-terminal capacitor and the first negative-terminal capacitor according to the positive-terminal output signal, the negative-terminal output signal and the target common mode voltage.