A power amplifier circuit includes a current generator and a current mirror driver. The current generator has a first input connected to a first voltage supply and an output configured to generate a first current. The current generator includes a first transistor, a second transistor, a first resistor and a second resistor. The first transistor has an emitter connected to ground. The second transistor has a base connected to a base of the first transistor and an emitter connected to ground. The first resistor is connected between the first voltage supply and a collector of the first transistor. The second resistor is connected between the first voltage supply and a collector of the second transistor. The current mirror drive has a first input connected to the output of the current generator to receive the first current and an output configured to generate a second current.

A semiconductor device is provided with one or more gate fingers (20) that are provided in an active region on a semiconductor substrate (1), and a source finger (30) and a drain finger (40) that are provided in the active region and arranged alternately to allow each gate finger to be sandwiched between the source and drain fingers. The semiconductor device includes terminal circuit (60) that has inductive impedance at the frequency of a signal input to an input terminal of the one or more gate fingers, and is directly or indirectly connected to the one or more gate fingers at an area being spaced away from a connecting position of the input terminal (21a) of the one or more gate fingers (20).

Provided is a bias circuit that supplies a first bias current or voltage to an amplifier that amplifies a radio frequency signal. The bias circuit includes: an FET that has a power supply voltage supplied to a drain thereof and that outputs the first bias current or voltage from a source thereof; a first bipolar transistor that has a collector thereof connected to a gate of the FET, that has a base thereof connected to the source of the FET, that has a common emitter and that has a constant current supplied to the collector thereof; and a first capacitor that has one end thereof connected to the collector of the first bipolar transistor and that suppresses variations in a collector voltage of the first bipolar transistor.

Broadly speaking, embodiments of the present techniques provide an amplification circuit comprising a sense amplifier and at least one Correlated Electron Switch (CES) configured to provide a signal to the sense amplifier. The sense amplifier outputs an amplified version of the input signal depending on the signal provided by the CES element. The signal provided by the CES element depends on the state of the CES material. The CES element provides a stable impedance to the sense amplifier, which may improve the reliability of reading data from the bit line, and reduce the number of errors introduced during the reading.

An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.

Example multi-band phased array are described. One example multi-band phased array includes a plurality of branches coupled to a plurality of multi-band antennas. Each of the plurality of branches includes a low noise amplifier and a power amplifier. The power amplifier and the low noise amplifier are configured to transmit and receive, in a time-sharing manner, a signal of a first frequency band and a signal of a second frequency band that are received by the multi-band phased array, and the first frequency band and the second frequency band are different and do not overlap. Each of the plurality of branches further includes a phase shifter, where the phase shifter is configured to perform phase shifting on the signal of the first frequency band, and the phase shifter is further configured to perform phase shifting on the signal of the second frequency band.

When a signal source sends a radio-frequency signal to an input amplification circuit, a control circuit sends a first control signal to the input amplification circuit according to the frequency of the radio-frequency signal, the input amplification circuit receives the first control signal and forms an input oscillation loop, the radio-frequency signal forms an amplified first signal through the input oscillation loop, and the input amplification circuit sends the first signal to the output amplification circuit. According to the frequency of the radio-frequency signal, the control circuit transmits a second control signal to the output amplification circuit, which forms an output oscillation loop matched with the first signal. The first signal is amplified by the output oscillation loop to form an emitting signal, the output amplification circuit transmits the emitting signal to the emitting antenna for emitting, thereby improving the utilization ratio of a radio-frequency front end chip package.

A power amplifier circuit includes an amplifier transistor having a base, a collector, a bias circuit, and a first resistance element connected between the base of the amplifier transistor and the bias circuit. The bias circuit includes a voltage generation circuit, a first transistor having a base to which a first direct-current voltage is supplied, and an emitter from which the bias current or voltage is supplied, a second transistor having a base to which a second direct-current voltage is supplied, and an emitter connected to the emitter of the first transistor, a signal supply circuit disposed between the base of the amplifier transistor and the base of the second transistor, and an impedance circuit disposed between the base of the first transistor and the base of the second transistor.

A Doherty amplifier includes: a first amplifier to amplify a first signal as an auxiliary amplifier in a case where a frequency of each of the first signal and a second signal is a first frequency, and amplify the first signal as a main amplifier in a case where the frequency of each of the first signal and the second signal is a second frequency; a second amplifier to amplify the second signal as a main amplifier in a case where the frequency of each of the first signal and the second signal is the first frequency, and amplify the second signal as an auxiliary amplifier in a case where the frequency of each of the first signal and the second signal is the second frequency; and a combiner to synthesize the first signal amplified by the first amplifier and the second signal amplified by the second amplifier.

An outphasing amplifier includes a first amplifier configured to amplify a first signal, a second amplifier configured to amplify a second signal of which a phase difference from the first signal changes, and a synthesizer that has a first transmission line through which a third signal output from the first amplifier passes, a second transmission line through which a fourth signal output from the second amplifier passes, a first coupling circuit that is separately provided from the first transmission line and is coupled to the first transmission line, a second coupling circuit that is separately provided from the second transmission line and coupled to the second transmission line, and a node that synthesizes the third signal having passed through the first transmission line and the fourth signal having passed through the second transmission line.