A power amplifier circuit includes a first transistor, a capacitor, and a second transistor. The first transistor has an emitter electrically connected to a reference potential, a base, and a collector electrically connected to a first power supply potential. A first end of the capacitor is electrically connected to the collector of the first transistor. The second transistor has an emitter electrically connected to a second end of the capacitor and electrically connected to the reference potential, a base, and a collector electrically connected to the first power supply potential. An RF output signal obtained by amplifying the RF input signal is output from the collector of the second transistor. A second bias circuit includes a third transistor having a collector electrically connected to a second power supply potential, a base, and an emitter from which the second bias current or voltage is output.

A power amplifier circuit includes a first transistor, a capacitor, and a second transistor. The first transistor has an emitter electrically connected to a reference potential, a base, and a collector electrically connected to a first power supply potential. A first end of the capacitor is electrically connected to the collector of the first transistor. The second transistor has an emitter electrically connected to a second end of the capacitor and electrically connected to the reference potential, a base, and a collector electrically connected to the first power supply potential. An RF output signal obtained by amplifying the RF input signal is output from the collector of the second transistor. A second bias circuit includes a third transistor having a collector electrically connected to a second power supply potential, a base, and an emitter from which the second bias current or voltage is output.

The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.

The present disclosure relates to a packaged radiofrequency (RF) power amplifier. The present disclosure further relates to a semiconductor die that is used in such a power amplifier and to an electronic device or system that comprises the semiconductor die and/or power amplifier. According to the disclosure, the semiconductor die comprises a second drain bond assembly arranged spaced apart from the first drain bond assembly and electrically connected thereto, wherein the second drain bond assembly is arranged closer to the input side of the semiconductor die than the first drain bond assembly. The RF power amplifier comprises a first plurality of bondwires which extend between the first drain bond assembly and the output lead, and a second plurality of bondwires which extend from the second drain bond assembly to a first terminal of a grounded capacitor.