A biased-transistor-module comprising: a module-input-terminal; a module-output-terminal; a reference-terminal; a module-supply-terminal configured to receive a supply voltage; a module-reference-voltage-terminal configured to receive a module reference voltage; a main-transistor having a main-control-terminal, a main-first-conduction-channel-terminal and a main-second-conduction-channel-terminal, wherein the main-first-conduction-channel-terminal is connected to the module-output-terminal, and the main-second-conduction-channel-terminal is connected to the reference-terminal, and the main-control-terminal is connected to an input-signal-node, wherein the input-signal-node is connected to the module-input-terminal; and a bias-circuit. The bias-circuit comprises: a first-bias-transistor; a first-bias-resistor; a second-bias-transistor; and a second-bias-resistor.

An apparatus for providing a supply control signal for a supply unit, the supply unit being configured to provide a variable controlled power supply to the power amplifier. The apparatus includes a determination module configured to determine a deviation of a signal from at least one nominal value; and an adjustment module configured to provide the supply control signal after an adjustment based on the determined deviation.

An embodiment of a Doherty amplifier module includes a substrate, an RF signal splitter, a carrier amplifier die, and a peaking amplifier die. The RF signal splitter divides an input RF signal into first and second input RF signals, and conveys the first and second input RF signals to first and second splitter output terminals. The carrier amplifier die includes one or more first power transistors configured to amplify, along a carrier signal path, the first input RF signal to produce an amplified first RF signal. The peaking amplifier die includes one or more second power transistors configured to amplify, along a peaking signal path, the second input RF signal to produce an amplified second RF signal. The carrier and peaking amplifier die are coupled to the substrate so that the RF signal paths through the carrier and peaking amplifier die extend in substantially different (e.g., orthogonal) directions.

According to some example embodiments, an apparatus includes a buck-boost converter, a first buck converter connected at an output terminal of the buck-boost converter, a second buck converter connected at the output terminal of the buck-boost converter, a first LA including a first supply voltage input connected to the output terminal of the buck-boost converter, and an output terminal connected to an output terminal of the first buck converter, where the first LA is configured to provide a first modulated supply voltage to a first PA of a first transmitter, and a second LA including a second supply voltage input connected to the output terminal of the buck-boost converter, and an output terminal connected to an output terminal of the second buck converter, where the second LA is configured to provide a second modulated supply voltage to a second PA of a second transmitter.

It is disclosed an amplifier for driving a capacitive load, comprising an input terminal adapted to receive an input voltage signal, an output terminal adapted to drive the capacitive load, a linear amplification stage, switching amplification stage, a capacitor, a first switch and a measurement and control circuit. The measurement and control circuit is configured to: measure the value of the current generated at the output from the linear amplification stage and generate a driving voltage signal of the switching amplification stage; generate the first switching signal to open the first switch and generate an enabling signal to enable the operation of at least part of the switching amplification stage; generate the first switching signal to close the first switch and generate the enabling signal to disable the operation of the switching amplification stage; generate the first switching signal to open the first switch.

Provided is an amplifier that includes a first transistor including a gate terminal to which an applied input signal is input, where a current depending on the applied input signal flows through the first transistor. A gate terminal of a second transistor is connected to a load section, and a current depending on a change in a voltage of the drain terminal of the first transistor flows through the second transistor. A source terminal of the first transistor and a drain terminal of the second transistor are connected in common to a first resistance, and the current from the first transistor and the current from the second transistor flow through the first resistance. A third transistor supplies a current approximately equal to the current of the second transistor. The current supplied by the third transistor is output from an output end.

Apparatuses, systems, and methods for implementing a multi-driver architecture are described. The multi-driver architecture may include a first driver and a second driver configured to receive an input voltage. A predriver logic circuit may select one of the first driver and the second driver to convert the input voltage into an output voltage. A controller may be connected to the first driver and the second driver, and a switch may be connected between an output terminal of the first driver and the controller. The controller may be configured to control an internal resistance of the switch. In response to the first driver being selected by the predriver logic circuit, the first driver may output the output voltage at a constant impedance level.

The present invention provides an amplifier including an input stage, an amplifier stage, a power stage and a de-gain stage. The input stage is configured to receive an input signal to generate an amplified signal. The amplifier stage is configured to generate a first driving signal and a second driving signal according to the amplified signal. The power stage comprises a first input terminal and a second input terminal, wherein the power stage is coupled to a supply voltage and a ground voltage, for receiving the first driving signal and the second driving signal from the first input terminal and the second input terminal, respectively, and generating an output signal.

Power amplifiers with adaptive bias for envelope tracking applications are provided herein. In certain embodiments, an envelope tracking system includes a power amplifier that amplifies a radio frequency (RF) signal and that receives power from a power amplifier supply voltage, and an envelope tracker that generates the power amplifier supply voltage based on an envelope of the RF signal. The power amplifier includes a field-effect transistor (FET) for amplifying the RF signal, and a current mirror including an input that receives a reference current and an output connected to the power amplifier supply voltage. An internal voltage of the current mirror is used to bias the gate of the FET to compensate the FET for changes in the power amplifier supply voltage arising from envelope tracking.

A semiconductor device is provided. The semiconductor device comprises an output terminal from which an output voltage is output, a switching converter configured to control the output voltage on the basis of a first reference voltage, a load capacitor configured to be charged with a voltage corresponding to the output voltage, a linear amplifier connected to one end of an alternating current (AC) coupling capacitor and configured to control a voltage of the AC coupling capacitor on the basis of a second reference voltage, and a switching circuit configured to control a charging speed of the load capacitor and control a connection between the output terminal and one end and another end of the AC coupling capacitor.