A power amplifier output stage includes a first output array group having a first plurality of semiconductor devices, and a first loading adjustment module coupled to the first output array group. The first loading adjustment module is configured to adjust a loading of the first output array group to produce a first power dissipation value associated with the first output array group. The power amplifier output stage further includes a second output array group having a second plurality of semiconductor devices, and a second source loading adjustment module coupled to a second input of the second output array. The second source loading adjustment module is configured to adjust a source loading of the second output array group to produce a second power dissipation value associated with the second output array group, the first power dissipation value being different from the second power dissipation value.

This application is directed to methods and devices for an efficient power amplification system. An electronic device includes a first and a second power amplifier that are coupled to a quadrature combiner, a temperature monitoring circuit coupled to the first and second power amplifiers, and a controller coupled to the temperature monitoring circuit. The temperature monitoring circuit is configured to determine a temperature difference between the first and second power amplifiers. The controller is configured to adjust operation of at least one of the first and second power amplifiers to reduce the temperature difference between the first and second power amplifiers.

This application is directed to methods and devices for an efficient power amplification system. An electronic device includes a first and a second power amplifier that are coupled to a quadrature combiner, a temperature monitoring circuit coupled to the first and second power amplifiers, and a controller coupled to the temperature monitoring circuit. The temperature monitoring circuit is configured to determine a temperature difference between the first and second power amplifiers. The controller is configured to adjust operation of at least one of the first and second power amplifiers to reduce the temperature difference between the first and second power amplifiers.

A system for generating a radio frequency (RF) signal at a drive frequency and a high voltage. The system includes a RF amplifier to amplify the voltage of a drive signal having a selected RF frequency. The amplified drive signal is used to drive a resonator to generate the RF signal such that the resonant frequency is the same or substantially the same as the drive frequency. A resonance tuning controller compares the drive frequency and the resonant frequency. If the resonant frequency and drive frequency are different, a temperature changing element is controlled to either increase heat or decrease heat radiating toward a tuning component with a resonance parameter that varies with temperature. For example, the heat may change the capacitance of the tuning capacitor causing a change in the resonant frequency of the resonator.

An oscillator (1) according to the present disclosure generates output power, and provides a microwave that is in accordance with the output power as an output wave. The oscillator (1) includes a signal generator (10), a power amplifier (20), and a temperature sensor (40). The signal generator (10) generates an oscillation signal. The power amplifier (20) includes a final stage device (22), and amplifies the oscillation signal to generate the output power. The temperature sensor (40) detects a temperature of the final stage device (22). The final stage device (22) is packaged. The temperature sensor (40) is disposed in a package (200) that includes the final stage device (22).

Disclosed is an integrated circuit module that includes a first die having a plurality of hot regions and at least one cool region when operating under normal conditions. The first die with a top surface includes at least one power amplifier that resides in the plurality of hot regions. The integrated circuit module also includes a second die. The second die has a bottom surface, which is adhered to the top surface of the first die, wherein any portion of the bottom surface of the second die that is adhered to the top surface of the first die resides exclusively on the at least one cool region. In at least one embodiment, the first die is an RF power amplifier die and the second die is a controller die having control circuitry configured to control the at least one power amplifier that is an RF power amplifier type.

A power amplifier output stage includes a first output array group having a first plurality of semiconductor devices, and a first loading adjustment module coupled to the first output array group. The first loading adjustment module is configured to adjust a loading of the first output array group to produce a first power dissipation value associated with the first output array group. The power amplifier output stage further includes a second output array group having a second plurality of semiconductor devices, and a second source loading adjustment module coupled to a second input of the second output array. The second source loading adjustment module is configured to adjust a source loading of the second output array group to produce a second power dissipation value associated with the second output array group, the first power dissipation value being different from the second power dissipation value.