An amplifier circuit with in-band gain degradation compensation is shown. The amplifier circuit has an input-stage amplifier, at least one intermediate-stage amplifier, and an output-stage amplifier cascaded between an input port and an output port of the amplifier circuit. A compensation capacitor is coupled between the output port of the amplifier circuit and an output port of the input-stage amplifier. A high-order damping circuit is coupled to an output port of the intermediate-stage amplifier.

A parallel input and dynamic cascaded OTA (operational transconductance amplifier includes: plural sub-OTAs which generate corresponding plural transconductance output currents according to corresponding plural differential input voltages; and at least one cascading capacitor which is cascaded between a first sub-OTA and a second sub-OTA. A second transconductance output current generated by the second sub-OTA is coupled through the cascading capacitor to generate a transient bias current on a common mode bias node of the first sub-OTA, thus providing the transient bias current to a differential pair circuit of the first sub-OTA in a case when a transient variation occurs in the differential input voltage corresponding to the first sub-OTA, so that a loop bandwidth and a response speed during a transient state are enhanced.

Doherty power amplifiers and devices are described with a low voltage driver stage in a carrier-path and a high voltage driver stage in a peaking-path. In an embodiment a Doherty power amplifier has a carrier-path driver stage transistor configured to operate using a first bias voltage at the driver stage output, and a final stage transistor configured to operate using a second bias voltage at the final stage output. A peaking-path driver stage transistor is configured to operate using a third bias voltage at the driver stage output, and a final stage transistor electrically coupled to the driver stage output of the peaking-path driver stage transistor is configured to operate using a fourth bias voltage at the final stage output, wherein the third bias voltage is at least twice as large as the first bias voltage.

Provided is a sensor interface including a first cantilever beam bundle including at least one resonator and a first output terminal, a second cantilever beam bundle including at least one resonator and a second output terminal, and a differential amplifier including a first input terminal electrically connected to the first output terminal of the first cantilever beam bundle and a second input terminal electrically connected to the second output terminal of the second cantilever beam bundle.

An amplification circuit includes: an amplifier including a transistor that is connected between an input terminal and an output terminal; an input matching network that is connected between the input terminal and an input side of the amplifier and converts an impedance from a low impedance to a high impedance; a limiter circuit that is connected between a node between the input matching network and the input side of the amplifier, and ground and includes two diodes connected in opposite directions to each other; and a capacitor that is connected in series with the limiter circuit between the node and ground.

An ultrasound detection device includes a probe and a transceiver. The probe includes first and second transducers, and an amplifier circuit. The first transducer transmits ultrasound. The second transducer includes a first electrode connected to a first wire, and converts the ultrasound into an electrical signal. The amplifier circuit includes first and second transistors. The first transistor includes a third electrode connected to the first wire, a fourth electrode as a gate or a base connected to a second electrode of the second transducer, and a fifth electrode connected to the fourth electrode via a resistor and connected to a second wire via a resistor. The second transistor includes an electrode connected to the first wire, an electrode as a gate or a base connected to the fifth electrode, and an electrode connected to the second wire via a resistor and connected to the second wire via a capacitor.

A multiple-stage amplifier includes a driver stage die and a final stage die. The driver stage die includes a first type of semiconductor substrate (e.g., a silicon substrate), a first transistor, and an integrated portion of an interstage impedance matching circuit. A control terminal of the first transistor is electrically coupled to an RF signal input terminal of the driver stage die, and the integrated portion of the interstage impedance matching circuit is electrically coupled between a current-carrying terminal of the first transistor and an RF signal output terminal of the driver stage die. The second die includes a III-V semiconductor substrate (e.g., a GaN substrate) and a second transistor. A connection, which is a non-integrated portion of the interstage impedance matching circuit, is electrically coupled between the RF signal output terminal of the driver stage die and an RF signal input terminal of the final stage die.

An amplifier for converting a single-ended input signal to a differential output signal. The amplifier comprises a first transistor, a second transistor, a third transistor and a fourth transistor. The first transistor, configured in common-source or common-emitter mode, receives the single-ended input signal and generates a first part of the differential output signal. The second transistor, also configured in common-source or common-emitter mode, generates a second part of the differential output signal. The third and fourth transistors are capacitively cross-coupled. The amplifier further comprises inductive degeneration such that a source or emitter of the first transistor is connected to a first inductor and a source or emitter of the second transistor is connected to a second inductor.

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.