An amplifying circuit includes a reference voltage generating circuit, a common-mode voltage conversion circuit, a common-mode negative feedback circuit, and an amplifying sub-circuit. The reference voltage generating circuit generates a first reference voltage, a second reference voltage, and a reference common-mode voltage according to a post-stage common-mode voltage. The common-mode voltage conversion circuit converts the pre-stage output differential signal into a differential input signal according to the reference common-mode voltage. The common-mode negative feedback circuit generates a control voltage to quickly establish a common-mode negative feedback of the amplifying sub-circuit, wherein the first reference voltage and the second reference voltage are used to cancel a baseline signal of the pre-stage output differential signal. The amplifying circuit can eliminate the baseline signal, convert the common-mode voltage and quickly establish the common-mode negative feedback.

A semiconductor circuitry includes a first circuitry having a differential transistor pair and a pair of current sources connected in series to the differential transistor pair, a pair of transmission lines connected to the differential transistor pair at the opposite side to the current sources, and a second circuitry, connected to a node between the differential transistor pair and the current sources, and configured to test operations of at least the differential transistor pair and a latter-stage circuity connected to the transmission lines, in the state where the current outputs of the pair of current sources are stopped.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.

A differential input amplification-stage circuit comprises a voltage unit, first and second bulk-driven transistors, first and second mirror current sources, and a differential amplifier unit. The first and the second bulk-driven transistors respectively receive first and second input voltages, and converts the first and the second input voltages into first and second output currents. The differential amplifier unit separately outputs first and second adjustment currents under an action of voltages output by the first to the third voltage output ends. The first and the second mirror current sources respectively output first and second predetermined currents according to the first output current and the first adjustment current, and the second output current and the second adjustment current, so as to maintain transconductance constancy of the differential input amplification-stage circuit. Therefore, output stability is improved.

Amplifiers with wide input range and low input capacitance are provided. In certain embodiments, an amplifier input stage includes a pair of input terminals, a pair of n-type input transistors, a first pair of isolation switches connected between the input terminals and the n-type input transistors, a pair of p-type input transistors, and a second pair of isolation switches connected between the input terminals and the p-type input transistors. The amplifier input stage further includes a control circuit that determines whether to use the n-type input transistors and/or the p-type input transistors for amplification based on a detected common-mode voltage of the input terminals. The control circuit opens the first pair of isolation switches to decouple the input terminals from the n-type input transistors when unused, and opens the second pair of isolation switches to decouple the input terminals from the p-type input transistors when unused.

A fully differential rail-to-rail-output amplifier includes a differential input inverter pair, folded cascode pair, class AB control pair, and class AB output rail-to-rail pair. A drain associated with the folded cascode pair is operatively coupled to the class AB control pair, and the drain associated with the folded cascode pair is unconnected to the current source associated with the class AB control pair. A method of providing fully differential rail-to-rail-output amplification includes coupling a folded cascode pair operatively to a differential input inverter pair, coupling a drain associated with the folded cascode pair operatively to a class AB control pair, and coupling a class AB output rail-to-rail pair operatively to the class AB control pair.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.

Amplifiers with wide input range and low input capacitance are provided. In certain embodiments, an amplifier input stage includes a pair of input terminals, a pair of n-type input transistors, a first pair of isolation switches connected between the input terminals and the n-type input transistors, a pair of p-type input transistors, and a second pair of isolation switches connected between the input terminals and the p-type input transistors. The amplifier input stage further includes a control circuit that determines whether to use the n-type input transistors and/or the p-type input transistors for amplification based on a detected common-mode voltage of the input terminals. The control circuit opens the first pair of isolation switches to decouple the input terminals from the n-type input transistors when unused, and opens the second pair of isolation switches to decouple the input terminals from the p-type input transistors when unused.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.