Techniques for interpolating two voltages without loading them and without requiring significant power or additional area are described. The techniques include specific topologies for the buffering amplifiers that offer accuracy by cancelling systematic error sources without relying on high gain, thus simplifying the frequency compensation, and reducing power consumption. This can be achieved by biasing the amplifiers from the load current by an innovative feedback structure, which can remove the need for high impedance nodes inside the amplifiers.

Techniques for interpolating two voltages without loading them and without requiring significant power or additional area are described. The techniques include specific topologies for the buffering amplifiers that offer accuracy by cancelling systematic error sources without relying on high gain, thus simplifying the frequency compensation, and reducing power consumption. This can be achieved by biasing the amplifiers from the load current by an innovative feedback structure, which can remove the need for high impedance nodes inside the amplifiers.

An electrical system includes a power supply and an electrical circuit coupled to the power supply and including an operational amplifier. The operational amplifier includes an input stage and a pre-driver stage coupled to the input stage, wherein the pre-driver stage includes a first input terminal, a second input terminal, and a voltage supply terminal. The operational amplifier also includes an output stage with bipolar transistors coupled to the pre-driver stage. The pre-driver stage is configured to: detect a voltage differential across the first and second input terminals of the pre-driver stage; and provide an adjustable bias current based on the voltage differential.

A power amplifier arrangement comprises a power amplifier comprising at least one transistor having a first gate and a second gate. The first gate is configured to receive a radio frequency input signal superimposed with a first control signal, and the second gate is configured to receive a second control signal. The first control signal is a linearization signal varying in relation to an envelope of the input signal and the second control signal is a temperature compensation signal varying in relation to a temperature of the power amplifier, or vice versa.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.

An apparatus has four transistors. The first and third transistors each have a gate coupled to a first input terminal and second input terminal respectively, a source coupled to a current source and to a first terminal of a bias voltage source, and a substrate coupled to a second terminal of the bias voltage source. The second and fourth transistors each have a gate coupled to the first input terminal and the second input terminal respectively, a source coupled to the drain of the first and third transistors respectively, a drain coupled to a lower voltage supply and a substrate coupled to its source. The bias voltage source increases the threshold voltages of the first and third transistors above the second and fourth transistors, respectively. This ensures that the first and third transistors turn on after the second and fourth transistors, respectively.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.

A bias circuit for a PA. A first transistor has its drain terminal and its gate terminal connected to a first circuit node and its source terminal connected to a first supply terminal, a first current source connected to the first circuit node, and a first resistor connected between the first and second circuit nodes. A second transistor receives a first component of a differential input signal to the PA at its gate terminal, has its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal, and a third transistor receives a second component of the differential input signal to the PA at its gate terminal, having its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal. The gates terminals of the second and the third transistors are biased by a first voltage.

A first embodiment is directed to a circuit including a positive biasing circuit with a drive PMOS for biasing in subthreshold, a negative biasing circuit with a drive NMOS for biasing in subthreshold, and an amplification circuit coupled to the biasing circuits. The amplification circuit includes a first stage with a first boosting stage, a second stage with a second boosting stage, and a resistive element coupled between the first and second stages. A second embodiment is directed to a folded cascode operational amplifier wherein a value of the resistive element is selected to place at least one of a drive MOS in subthreshold. A third embodiment is directed to an integrated circuit with a resistive area neighboring a first boosting area and a second boosting area, the resistive area including a resistive element directly connected to a drive PMOS and a drive NMOS.