For example, a semiconductor device includes one or more first subcontacts electrically conducted to a substrate. At least one of the one or more first subcontacts is formed in an element arrangement region, and has a lower impedance than the substrate. Preferably, at least one of the one or more first subcontacts is adjacent to a circuit element formed in the element arrangement region. Preferably, on the substrate, which is of a first conductivity type, an epilayer of a second conductivity type is formed, and the one or more first subcontacts include a first line having a lower impedance than the substrate, and a semiconductor region of the first conductivity type penetrating through the epilayer to electrically conduct the first line and the substrate to each other.

A differential MEMS-readout circuit comprises a first input bonding pad, including a first contact pin and a second contact pin. The differential MEMS-readout circuit comprises a second input bonding pad, including a first contact pin and a second contact pin; and a differential-readout amplifier section comprising a first input connected to the first contact pin of the first input bonding pad and a second input connected to the first contact pin of the second bonding pad, wherein the differential-readout amplifier section comprises a first and a second transistor circuit and each of the second contact pins of the first and second input bonding pads is coupled to one of the first and the second transistor circuits or is coupled to one of the first and the second transistor circuits and/or to ground.

An operational amplifier 1 comprises transistors Q1 and Q2 forming an input stage, and input resistors R1 and R2 which form a filter together with parasitic capacitors C1 and C2 accompanying the transistors Q1 and Q2. Resistance values R of the resistors R1 and R2 may be set to R=1/(2π.Math.fc.Math.C), where C is the capacitance value of each of the parasitic capacitors C1 and C2, and fc is the target cutoff frequency of the filter. The operational amplifier 1 may also include a power supply resistor R0 which forms a filter together with a parasitic capacitor C0 accompanying a power supply line.

A signal receiver includes a first transistor, a second transistor, a load circuit, an amplifying circuit and a load circuit. The first transistor has a first end receiving a power voltage, and a control end receive a first input signal. The second transistor has a first end receiving the power voltage, and a control end receiving a second input signal, wherein the first input signal and the second input signal are differential signals and transit between a first voltage and a reference ground voltage, the first voltage is larger than the power voltage. The load circuit is coupled to the first transistor and the second transistor. The amplifying circuit generates an output signal according a first signal on the second end of the first transistor and a second signal on the second end of the second transistor.

An electrical system includes a power supply and an electrical circuit coupled to the power supply and including an operational amplifier. The operational amplifier includes an input stage and a pre-driver stage coupled to the input stage, wherein the pre-driver stage includes a first input terminal, a second input terminal, and a voltage supply terminal. The operational amplifier also includes an output stage with bipolar transistors coupled to the pre-driver stage. The pre-driver stage is configured to: detect a voltage differential across the first and second input terminals of the pre-driver stage; and provide an adjustable bias current based on the voltage differential.

Distributed amplifier systems and methods are disclosed. An example distributed amplifier system includes first stage traveling wave amplifier (TWA) circuitry that is controllable to provide one of a first set of discrete gain settings. The first stage TWA circuitry includes a first input transmission line, a first output transmission line, and a first plurality of amplifiers coupled antiparallel between the first input transmission line and the first output transmission line. The first set of discrete gain settings has approximately constant logarithmic spacing.

For broadband data communication, a data signal voltage at a signal input node can be converted to an output signal current at a signal output node. A first transistor device can contribute to the output signal current, with its transconductance or other gain reduced to accommodate larger signal swings, at which a second transistor can turn on and increase an effective resistance value of at least a portion of a gain degeneration resistor associated with the first transistor device. The second transistor can also contribute to the output signal current to help maintain or enhance an overall gain between the signal input node and the signal output node. Multiple secondary stages, push-pull arrangements, buffer amplifier configurations (which may or may not contribute to current in the gain degeneration resistor), input and output transformers, negative feedback to help reduce component variability, and frequency modification circuits or components are also described.

A receiver circuit includes an analog front end and a non-linear equalizer. The analog front end including a super source follower (SSF) amplifier having a first input terminal adapted to couple to a transmission line to receive an input signal referenced to a first voltage level, a second input adapted to receive a reference voltage, and first and second output terminals adapted to provide an amplified signal referenced to a second voltage level. The non-linear equalizer coupled to receive an output signal of the analog front end and compensate for inter-symbol interference at a data rate of at least 14 Gbps. The SSF amplifier includes transistors having relative sizes selected to provide a frequency response of the SSF amplifier with a peak at a frequency approximately ⅔ of the data rate.

An operational amplifier 1 comprises transistors Q1 and Q2 forming an input stage, and input resistors R1 and R2 which form a filter together with parasitic capacitors C1 and C2 accompanying the transistors Q1 and Q2. Resistance values R of the resistors R1 and R2 may be set to R=1/(2π.Math.fc.Math.C), where C is the capacitance value of each of the parasitic capacitors C1 and C2, and fc is the target cutoff frequency of the filter. The operational amplifier 1 may also include a power supply resistor R0 which forms a filter together with a parasitic capacitor C0 accompanying a power supply line.

A differential amplifier circuit includes: a control current source supplying a control current; paired bipolar transistors; an a variable resistance circuit including: a series circuit of a first resistor and a second resistor having an identical resistance, the series circuit electrically connected between a first terminal and a second terminal of the variable resistance circuit; a first field effect transistor (FET) having a source and a drain being electrically connected to emitters of the paired bipolar transistors, respectively; and a second FET having a drain, a gate being electrically connected to the drain thereof, the gate of the first FET, and a control terminal of variable resistance circuit, a source being electrically connected to a connection node between the first resistor and the second resistor, wherein the control current source adjusts the control current to allow transconductance of the second FET to be kept constant.