Power amplification system is disclosed. A power amplification system can include a Class-E push-pull amplifier including a transformer balun. The power amplification can further include a reactance compensation circuit coupled to the transformer balun. In some embodiments, the reactance compensation circuit is configured to reduce variation over frequency of a fundamental load impedance of the power amplification system.

Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.

Methods and devices for amplifying an input RF signal according to at least two gain-states is described. According to one aspect, a multi gain amplifier circuit including a low noise amplifier having a stack of transistors is used for amplification of the input RF signal. When switching from a low gain-state to a high gain-state, the drain-to-source voltage of the output transistor of the stack is increased to affect region of operation of the output transistor, and thereby reduce non-linearity at the output of the amplifier. When switching from the high gain-state to the low gain-state, the drain-to-source voltage of the input transistor of the stack is increased to affect region of operation of the input transistor, and thereby reduce non-linearity at the output of the amplifier.

A multibeam-inductive-output-tube amplifier comprises an output cavity and a plurality of electron guns each intended to emit an electron beam through the output cavity, each electron gun comprising a cathode intended to emit the electron beam and a gate allowing the density of the electron beam to be modulated. The amplifier comprises, associated with each gun, a DC voltage supply, each of the supplies connected to the gate of the corresponding electron gun so as to bias the gate. The voltage of at least one of the supplies is adjustable so as to balance the density of the various electron beams.

A multibeam-inductive-output-tube amplifier comprises an output cavity and a plurality of electron guns each intended to emit an electron beam through the output cavity, each electron gun comprising a cathode intended to emit the electron beam and a gate allowing the density of the electron beam to be modulated. The amplifier comprises, associated with each gun, a DC voltage supply, each of the supplies connected to the gate of the corresponding electron gun so as to bias the gate. The voltage of at least one of the supplies is adjustable so as to balance the density of the various electron beams.

A power amplifier device includes a semiconductor substrate; a plurality of first transistors that are provided on the semiconductor substrate and receive input of a radio-frequency signal; a plurality of second transistors that are provided on the semiconductor substrate and electrically connected to the respective plurality of first transistors, and output a radio-frequency output signal obtained by amplifying the radio-frequency signal; a plurality of first bumps provided so as to overlay the respective plurality of first transistors; and a second bump provided away from the plurality of first bumps and provided so as not to overlay the plurality of first transistors and the plurality of second transistors. When viewed in plan from a direction perpendicular to a surface of the semiconductor substrate, a first transistor and a first bump, a second transistor, the second bump, a second transistor, and a first transistor and a first bump are arranged in sequence.

The present invention provides a vacuum tube audio amplifier which includes an audio pre-amplifying portion and an audio output transforming portion. The audio pre-amplifying portion includes an equalizer for enhanced sound quality and amplifies an audio signal, which is subsequently transmitted to the audio output transforming portion. Furthermore, the audio output transforming portion includes an audio output transformer which includes a plurality of stacked E-shaped silicon steel sheets and a plurality of stacked I-shaped silicon steel sheets, wherein the stacked E-shaped silicon steel sheets and the stacked I-shaped silicon steel sheets have a same height which is smaller than or equal to 48 mm.

The present invention provides a vacuum tube audio amplifier which includes an audio pre-amplifying portion and an audio output transforming portion. The audio pre-amplifying portion includes an equalizer for enhanced sound quality and amplifies an audio signal, which is subsequently transmitted to the audio output transforming portion. Furthermore, the audio output transforming portion includes an audio output transformer which includes a plurality of stacked E-shaped silicon steel sheets and a plurality of stacked I-shaped silicon steel sheets, wherein the stacked E-shaped silicon steel sheets and the stacked I-shaped silicon steel sheets have a same height which is smaller than or equal to 48 mm.

The present invention provides a vacuum tube audio amplifier which includes an audio pre-amplifying portion and an audio output transforming portion. The audio pre-amplifying portion includes an equalizer for enhanced sound quality and amplifies an audio signal, which is subsequently transmitted to the audio output transforming portion. Furthermore, the audio output transforming portion includes an audio output transformer which includes a plurality of stacked E-shaped silicon steel sheets and a plurality of stacked I-shaped silicon steel sheets, wherein the stacked E-shaped silicon steel sheets and the stacked I-shaped silicon steel sheets have a same height which is smaller than or equal to 48 mm.

The present invention provides a vacuum tube audio amplifier which includes an audio pre-amplifying portion and an audio output transforming portion. The audio pre-amplifying portion includes an equalizer for enhanced sound quality and amplifies an audio signal, which is subsequently transmitted to the audio output transforming portion. Furthermore, the audio output transforming portion includes an audio output transformer which includes a plurality of stacked E-shaped silicon steel sheets and a plurality of stacked I-shaped silicon steel sheets, wherein the stacked E-shaped silicon steel sheets and the stacked I-shaped silicon steel sheets have a same height which is smaller than or equal to 48 mm.