The present invention discloses a variable gain amplifier circuit having linearity compensation mechanism is provided. A lower amplification transistor of a lower branch of an amplification circuit is controlled by an AC input signal. Upper amplification transistors of an upper branch generate an AC output signal at an amplification output terminal. An amplification control circuit controls the turn-on and turn-off of the upper amplification transistor according to an amplification control voltage. An inductor is electrically coupled between a power supply terminal and the amplification output terminal. In a gain adjustment circuit, each of adjustment control circuits controls the turn-on and turn-off of each of adjustment transistors according to a adjustment control voltage. A first voltage adjustment circuit adjusts an impedance of each of the adjustment transistors to further adjust an AC cross voltage relation between the lower amplification transistor and the upper amplification transistors.

Disclosed herein are embodiments of a wide bandwidth attenuator circuit having a tunable gain and tunable input impedance. In some embodiments, the wideband attenuator circuit comprises a serial capacitor shunted to ground by a plurality of circuit slices that are connected in parallel and switchably coupled to the output node of the attenuator. Each circuit slice has a tunable resistor that can be set to a conductive state (“enabled”) or a high impedance state (“disabled”) The number of enabled circuit slices that are connected in parallel may be used to program the attenuator gain and the attenuator impedance.

The present invention is directed to electrical circuits and techniques thereof. More specifically, an embodiment of the present invention provides a variable gain amplifier that includes a first transistor and a second transistor whose gate terminals are coupled to a first input terminal. A first drain terminal of the first transistor and a first source terminal of the second transistor is coupled to a voltage gain control switch. There are other embodiments as well.

An amplifier includes a first circuitry, a second circuitry, and a plurality of amplifier circuitries. The first circuitry controls an enable signal. The second circuitry controls a bias signal. Circuitries which output signals are decided from among the plurality of circuitries based on the enable signal, and each of the circuitries which output the signals amplifies an input signal with a gain corresponding to the bias signal.

A method of controlling bandwidth and peaking over gain in a variable gain amplifier (VGA) device and structure therefor. The device includes at least three differential transistor pairs configured as a cross-coupled differential amplifier with differential input nodes, differential bias nodes, differential output nodes, a current source node, and two cross-coupling nodes. The cross-coupled differential amplifier includes a load resistor coupled to each of the differential output nodes and one of the cross-coupling nodes, and a load inductor coupled to the each of the cross-coupling nodes and a power supply rail. A current source is electrically coupled to the current source node. The cross-coupling configuration with the load resistance and inductance results in a lower bandwidth and lowered peaking at low gain compared to high gain. Further, the tap point into the inductor can be chosen as another variable to “tune” the bandwidth and peaking in a communication system.

An attenuator arrangement comprising at least a first attenuation path configured to couple between a signal processing chain, SPC, and a measurement apparatus; said SPC comprising a first and second SPC terminal, said SPC configured to apply one or both of a gain and phase change on a signal passed between the SPC terminals; said measurement apparatus configured to measure one or both of the gain and the phase change applied by SPC by coupling to and receiving signals from said SPC terminals; wherein one of said first SPC terminal and said second SPC terminal is coupled to the measurement apparatus through said first attenuation path; and wherein the at least first attenuation path of the attenuator arrangement is configured to provide, selectively, for attenuation of the signal to the measurement apparatus to make the signal power of the signals from said SPC terminals more equal.

A high-frequency power amplifier is configured in such a way as to include an input matching circuit, an amplifying element, an output matching circuit, a coupling circuit, a detection circuit, and an output terminal, and in such a way that either the input matching circuit or the output matching circuit has an active element, the detection circuit receives a signal outputted by the coupling circuit and outputs a control voltage into which the detection circuit converts the signal to the active element, and the active element changes the impedance of the active element in accordance with the control voltage outputted by the detection circuit, thereby changing the power of a signal outputted by either the input matching circuit having the active element or the output matching circuit having the active element, to change the power of a signal which the coupling circuit outputs to the output terminal.

A number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.

A circuit having a DC-to-DC converter and an input circuit connected on the line side of the DC-to-DC converter, having a first terminal and a second terminal for connection to a power supply and a third terminal and a fourth terminal for connection to the DC-to-DC converter. Between the first and third terminals, the input circle has a semiconductor element, wherein a first component terminal of the semiconductor element is connected via at least a first capacitor and a second capacitor to a second component terminal of the semiconductor element, wherein a resistance of the semiconductor element is controllable by a voltage between the first component terminal and the second component terminal.

A number of field effect transistor circuits include voltage controlled attenuators or voltage controlled processing circuits. Example circuits include modulators, lower distortion variable voltage controlled resistors, sine wave to triangle wave converters, and or servo controlled biasing circuits.