A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

Embodiments of a tunable bandpass microelectromechanical (MEMS) filter are described. In one embodiment, such a filter includes a pair of arch beam microresonators, and a pair of voltage sources electrically coupled to apply a pair of adjustable voltage biases across respective ones of the pair of arch beam microresonators. The pair of voltage sources offer independent tuning of the bandwidth of the filter. Based on the structure and arrangement of the filter, it can be tunable by 125% or more by adjustment of the adjustable voltage bias. The filter also has a relatively low bandwidth distortion, can exhibit less than 2.5 dB passband ripple, and can exhibit sideband rejection in the range of at least 26 dB.

A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

A moveable micromachined member of a microelectromechanical system (MEMS) device includes an insulating layer disposed between first and second electrically conductive layers. First and second mechanical structures secure the moveable micromachined member to a substrate of the MEMS device and include respective first and second electrical interconnect layers coupled in series, with the first electrically conductive layer of the moveable micromachined member and each other, between first and second electrical terminals to enable conduction of a first joule-heating current from the first electrical terminal to the second electrical terminal through the first electrically conductive layer of the moveable micromachined member.

Embodiments of a tunable bandpass microelectromechanical (MEMS) filter are described. In one embodiment, such a filter includes a pair of arch beam microresonators, and a pair of voltage sources electrically coupled to apply a pair of adjustable voltage biases across respective ones of the pair of arch beam microresonators. The pair of voltage sources offer independent tuning of the bandwidth of the filter. Based on the structure and arrangement of the filter, it can be tunable by 125% or more by adjustment of the adjustable voltage bias. The filter also has a relatively low bandwidth distortion, can exhibit less than 2.5 dB passband ripple, and can exhibit sideband rejection in the range of at least 26 dB.