Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.

The present disclosure relates to a tunable Bulk Acoustic Wave (BAW) resonator with a top electrode, a bottom electrode, a piezoelectric layer sandwiched between the top electrode and the bottom electrode, and a reflection region underneath the bottom electrode. The reflection region includes a reflection layer and an ion-conductible structure between the bottom electrode and the reflection layer. Herein, the ion-conductible structure has a first terminal layer coupled to the bottom electrode, a second terminal layer coupled to the reflection layer, and an ion conductor between the first terminal layer and the second terminal layer. The ion conductor is eligible to transport ions between the first terminal layer and the second terminal layer, so as to achieve a mass-loading shift between the first terminal layer and the second terminal layer, and consequently, to tune a resonance frequency of the tunable BAW resonator.

A zero-output coupled resonator filter (ZO-CRF) and related radio frequency (RF) filter circuit are provided. In examples discussed herein, the ZO-CRF can be configured to function as a shunt resonator(s) in an RF filter circuit (e.g., a ladder filter circuit). The ZO-CRF includes a first resonator and a second resonator that are coupled to each other via a coupling layer. The first resonator and the second resonator receive a first voltage and a second voltage, respectively. The first voltage and the second voltage can be configured in a number of ways to cause the ZO-CRF to resonate at different resonance frequencies. As such, it may be possible to modify resonance frequency of the ZO-CRF in an RF filter circuit based on signal connection. As a result, it may be possible to reduce total inductance of the RF filter circuit, thus helping to reduce footprint of the RF filter circuit.

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.

Piezoelectric acoustic metamaterial resonators include a piezoelectric substrate having a top surface and a bottom surface and a plurality of magnetostrictive members disposed on the top surface of the piezoelectric substrate and extending along a length of the piezoelectric substrate and spaced across a width of the piezoelectric substrate.

Embodiments of an acoustic wave filter system that includes at least one acoustic wave filter and acoustic wave tuning control circuitry are disclosed. The acoustic wave filter includes at least one acoustic wave resonator and defines a passband. To provide tuning for calibration or for dynamic filter operation, the acoustic wave tuning control circuitry is configured to bias one or more of the acoustic wave resonators with bias voltages. Biasing an acoustic wave resonator affects the resonances of the resonator, thereby allowing for the passband of the acoustic wave resonator to be tuned. Accordingly, the acoustic wave tuning control circuitry is configured to adjust the bias voltages so that the acoustic wave filter shifts the passband. In this manner, the passband of the acoustic wave filter can be tuned with high degree of accuracy and without requiring physical alterations to the acoustic wave resonators.

An electrical circuit assembly can include a semiconductor integrated circuit, such as fabricated including CMOS devices. A first lateral-mode resonator can be fabricated upon a surface of the semiconductor integrated circuit, such as including a deposited acoustic energy storage layer including a semiconductor material, a deposited piezoelectric layer acoustically coupled to the deposited acoustic energy storage layer, and a first conductive region electrically coupled to the deposited piezoelectric layer and electrically coupled to the semiconductor integrated circuit. The semiconductor integrated circuit can include one or more transistor structures, such as fabricated prior to fabrication of the lateral-mode resonator. Fabrication of the lateral-mode resonator can include low-temperature processing specified to avoid disrupting operational characteristics of the transistor structures.

Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.

Embodiments of an acoustic wave filter system that includes at least one acoustic wave filter and acoustic wave tuning control circuitry are disclosed. The acoustic wave filter includes at least one acoustic wave resonator and defines a passband. To provide tuning for calibration or for dynamic filter operation, the acoustic wave tuning control circuitry is configured to bias one or more of the acoustic wave resonators with bias voltages. Biasing an acoustic wave resonator affects the resonances of the resonator, thereby allowing for the passband of the acoustic wave resonator to be tuned. Accordingly, the acoustic wave tuning control circuitry is configured to adjust the bias voltages so that the acoustic wave filter shifts the passband. In this manner, the passband of the acoustic wave filter can be tuned with high degree of accuracy and without requiring physical alterations to the acoustic wave resonators.