Patent classifications
H03H9/02259
PIEZO-RESISTIVE TRANSISTOR BASED RESONATOR WITH FERROELECTRIC GATE DIELECTRIC
Describe is a resonator that uses ferroelectric (FE) materials in the gate of a transistor as a dielectric. The use of FE increases the strain/stress generated in the gate of the FinFET. Along with the usual capacitive drive, which is boosted with the increased polarization, FE material expands or contacts depending on the applied electric field on the gate of the transistor. As such, acoustic waves are generated by switching polarization of the FE materials. In some embodiments, the acoustic mode of the resonator is isolated using phononic gratings all around the resonator using the metal line above and vias' to body and dummy fins on the side. As such, a Bragg reflector is formed above the FE based transistor.
VIBRATOR DEVICE
A vibrator device includes a vibrator element having a base part, and a detection arm and a drive arm as a plurality of vibrating arms extending in a B direction as a first direction from the base part, a base body, and a support substrate configured to support the vibrator element with respect to the base body, wherein the support substrate includes a base-body fixation part to be fixed to the base body, an element support part configured to support the base part of the vibrator element, and a beam part configured to couple the base-body fixation part and the element support part to each other, and the support substrate has a plurality of recessed parts corresponding to the plurality of vibrating arms in an area which is located at a side of a surface opposed to the vibrator element, and on which at least a part of the vibrating arms overlaps in a plan view.
Three dimensional microstructures with selectively removed regions for use in gyroscopes and other devices
Three-dimensional (3D) micro-scale shells are presented with openings of various sizes and geometries on the surface. The shell consist of a suspended ring-shaped resonator, multiple support beams, a support post, and a cap region that connects the support beams to the support post. Shells with openings of various sizes and geometries allow the creation of micro electromechanical systems (MEMS) sensors and actuators with a wide range of engineered mechanical and electrical properties. The openings on the shell surface can, for example, control the mechanical quality factor (Q) and resonance frequencies of the shell when the shell is used as a suspended proof mass of a mechanical resonator of a vibratory gyroscope. The shells can also serve as mechanical supporting layers and/or an electrode connection layer for MEMS actuators and sensors that use 3D shells as proof masses.
BULK ACOUSTIC WAVE (BAW) RESONATOR, PATTERNED LAYER STRUCTURES, DEVICES AND SYSTEMS
Techniques for improving Bulk Acoustic Wave (BAW) reflector and resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A Bulk Acoustic Wave (BAW) resonator of this disclosure may comprise a substrate and an active piezoelectric resonant volume. The active piezoelectric resonant volume of the Bulk Acoustic Wave (BAW) resonator may have a main resonant frequency. The active piezoelectric resonant volume of the Bulk Acoustic Wave (BAW) resonator may comprise first and second piezoelectric layers having respective piezoelectric axis that substantially oppose one another. A first patterned layer may be disposed within the active piezoelectric volume. This may, but need not facilitate suppression of spurious modes. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in a super high frequency (SHF) band. The main resonant frequency of the Bulk Acoustic Wave (BAW) resonator may be in an extremely high frequency (EHF) band.
CLOCK DEVICE
The present description concerns a clock signal generation device (902) comprising: a microelectromechanical resonant element (504); and at least one nanoelectromechanical transduction element (512).
Vibration element, electronic apparatus, and vehicle
A vibration element includes: a base; a first arm continuous with the base; a second arm that is continuous with the base and is adjacent to the first arm; a first electrode disposed on the first arm, the second arm, and the base; a first piezoelectric layer that has a first polarity and that is disposed on the first electrode on the first arm; a second piezoelectric layer that has a second polarity different from the first polarity and that is disposed on the first electrode on the second arm; an insulating layer disposed on the first electrode on the base; and a second electrode disposed on the first piezoelectric layer, the second piezoelectric layer, and the insulating layer.
Distributed-mode beam and frame resonators for high frequency timing circuits
Embodiments of the present disclosure relate generally to MEMS resonators. An exemplary MEMS resonator comprises a resonator beam having a length and a width. The length can be an integer multiple of the width. The integer multiple can be at least two. The resonator is configured to resonate at a frequency upon application of an input signal. The TCF of this resonator can be made close to zero, thus providing a temperature stable resonator. The exemplary MEMS resonator thereby has the advantages of high Q, low polarization voltage, low motional impedance and temperature stability of low frequency resonators while being able resonate at high frequencies of 30 MHz to 30 GHz.
Guided wave devices with selectively loaded piezoelectric layers
A micro-electrical-mechanical system (MEMS) guided wave device includes a plurality of electrodes arranged below a piezoelectric layer (e.g., either embedded in a slow wave propagation layer or supported by a suspended portion of the piezoelectric layer) and configured for transduction of a lateral acoustic wave in the piezoelectric layer. The piezoelectric layer permits one or more additions or modifications to be made thereto, such as trimming (thinning) of selective areas, addition of loading materials, sandwiching of piezoelectric layer regions between electrodes to yield capacitive elements or non-linear elastic convolvers, addition of sensing materials, and addition of functional layers providing mixed domain signal processing utility.
Spurious-mode-free, laterally-vibrating microelectromechanical system resonators
A micro-resonator includes a first electrode positioned on a piezoelectric plate at a first end of the piezoelectric plate, the first electrode including a first set of fingers and a second electrode positioned on the piezoelectric plate at a second end of the piezoelectric plate. The second electrode including a second set of fingers interdigitated with the first set of fingers with an overlapping distance without touching the first set of fingers, the overlapping distance being less than seven-tenths the length of one of the first set of fingers or the second set of fingers. At least one of the first end or the second end of the piezoelectric plate may define a curved shape.
TUNABLE RESONATOR
A resonator device includes a substrate with a first number of fins extending over the substrate. The fins extend along the substrate in a first direction. A second number of conductive fingers are provided over the fins, which extend in a second direction perpendicular to the first direction. The first number is less than or equal to the second number. The conductive fingers are configured to receive an input signal such that the conductive fingers resonate at an output frequency. The conductive fingers define a finger pitch therebetween, and the output frequency is based on the finger pitch.