Patent classifications
H03H9/02606
Saw resonator comprising layers for attenuating parasitic waves
The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.
SAW RESONATOR COMPRISING LAYERS FOR ATTENUATING PARASITIC WAVES
The invention relates to a SAW resonator (100) comprising at least: a substrate (102); a layer (108) of piezoelectric material arranged on the substrate; a first attenuation layer (112) arranged between the substrate and the layer of piezoelectric material, and/or, when the substrate comprises at least two different layers (104, 106), a second attenuation layer (114) arranged between the two layers of the substrate; and in which the at least one attenuation layer is/are heterogeneous.
Surface elastic wave device comprising a single-crystal piezoelectric film and a crystalline substrate with low visoelastic coefficients
A surface elastic wave device comprises a stack including: a thin film made of a piezoelectric first material; a substrate made from a second material; and exciting means for generating at least one surface acoustic wave propagation mode in the piezoelectric film; wherein: the first material is a single-crystal material and the second material is a crystalline material, the thickness of the thin film of piezoelectric first material being smaller than or equal to 20 m, and the first material and the second material having viscoelastic coefficients lower than or equal to those of quartz for the propagation mode induced by the exciting means.