An acoustic wave device includes a support substrate, a piezoelectric body layer, an interdigital transducer electrode, and an external connection electrode. The piezoelectric body layer is on the support substrate. The interdigital transducer electrode is on the piezoelectric body layer. The external connection electrode is electrically connected to the interdigital transducer electrode. The external connection electrode does not overlap the piezoelectric body layer in a plan view from a thickness direction of the support substrate. The support substrate includes a hollow portion. The hollow portion is at least on an end portion of the support substrate in a plan view from the thickness direction.

A surface acoustic wave resonator arrangement comprises a piezoelectric substrate (100) and a surface acoustic wave resonator (110) which includes an interdigital transducer (111,112) disposed on the piezoelectric substrate (100). A trench (13 0) is disposed within the piezoelectric substrate (100) facing the resonator (110). Trench (130) causes reflected waves (143,144) in response to waves (141,142) leaking from the surface acoustic wave resonator. Trench (130) is configured such that the reflected acoustic waves (143,144) achieve phases at the edge (115) of the resonator (110) such that the accumulated phases of all the reflected waves received at edge (115) is zero or substantially zero, thereby avoiding constructive interference of the reflected waves with the acoustic waves resonating in the resonator. Thereby undesired acoustic coupling between resonators or influence of waves reflected at edges of the piezoelectric substrate or dicing lines is reduced.

An example integrated circuit package includes an acoustic wave resonator, the acoustic wave resonator including a Fresnel surface. In some examples, the Fresnel surface includes a plurality of recessed features and/or protruding features at different locations on the Fresnel surface, each of the plurality of features to confine main mode acoustic energy from a respective portion of the Fresnel surface in a central portion of the acoustic wave resonator.

An electro acoustic filter component with improved acoustic and/or electro acoustic performance is provided. The component comprises a piezoelectric material (PM) the sides of which are plane and preferably free from chipping defects. The piezoelectric material may be arranged above a carrier substrate (CS). A functional layer (FL) with plane sides may be arranged above an electrode structure (ES) as trimming, TCF or passivation layer. In the manufacturing method the piezoelectric material and the functional layer are removed from the dicing line, such that no chipping occurs for these layers.

An acoustic wave device includes: a first substrate having a first surface and a side surface; an acoustic wave resonator located on the first surface of the first substrate; and a first insulator film that covers the acoustic wave resonator and is in contact with at least a part, which is located closer to the first surface, of the side surface of the first substrate.

An example integrated circuit package includes an acoustic wave resonator, the acoustic wave resonator including a Fresnel surface. In some examples, the Fresnel surface includes a plurality of recessed features and/or protruding features at different locations on the Fresnel surface, each of the plurality of features to confine main mode acoustic energy from a respective portion of the Fresnel surface in a central portion of the acoustic wave resonator.

An acoustic wave device includes a support substrate, a piezoelectric body layer, an interdigital transducer electrode, and an external connection electrode. The piezoelectric body layer is on the support substrate. The interdigital transducer electrode is on the piezoelectric body layer. The external connection electrode is electrically connected to the interdigital transducer electrode. The external connection electrode does not overlap the piezoelectric body layer in a plan view from a thickness direction of the support substrate. The support substrate includes a hollow portion. The hollow portion is at least on an end portion of the support substrate in a plan view from the thickness direction.

Acoustic wave resonators having Fresnel features are disclosed. An example integrated circuit package includes an acoustic wave resonator, the acoustic wave resonator including a Fresnel surface. In some examples, the Fresnel surface includes a plurality of recessed features and/or protruding features at different locations on the Fresnel surface, each of the plurality of features to confine main mode acoustic energy from a respective portion of the Fresnel surface in a central portion of the acoustic wave resonator.

In certain aspects, a thin film surface acoustic wave (SAW) die comprises a high-resistivity substrate, a bonding layer on the high-resistivity substrate, and a thin film piezoelectric island on the bonding layer, where an edge of the thin film piezoelectric island is offset from an edge of the bonding layer.

An acoustic wave device includes: a first substrate having a first surface and a side surface; an acoustic wave resonator located on the first surface of the first substrate; and a first insulator film that covers the acoustic wave resonator and is in contact with at least a part, which is located closer to the first surface, of the side surface of the first substrate.