The multiplexer includes a plurality of IDT electrodes on a substrate, an insulating cover located on the substrate so as to configure one or more spaces above the plurality of IDT electrodes, an antenna terminal, transmission terminal, and reception terminal which are all located on the substrate and pass through the cover, and a reinforcing layer which is located on the cover and is made of metal. By the plurality of IDT electrodes, a transmission filter located in a signal path connecting the antenna terminal and the transmission terminal and a receiving filter located in a signal path connecting the antenna terminal and the reception terminal. The reinforcing layer includes a first area part facing the transmission filter and a second area part which faces the receiving filter and is separated from the first area part.

An elastic wave filter includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a first shield electrode provided on the piezoelectric substrate, a first insulating film laminated on the piezoelectric substrate and extending onto the first shield electrode, a first signal terminal provided on the first insulating film, a second signal terminal provided on the piezoelectric substrate, and a first ground terminal provided on the piezoelectric substrate and connected to a ground potential. The first shield electrode is not electrically connected to the IDT electrode and the first and second signal terminals. The first signal terminal is included in the first shield electrode when seen from above. One of the first signal terminal and the second signal terminal is an output terminal and the other thereof is an input terminal.

A filter device includes a piezoelectric substrate, a dielectric layer on the piezoelectric substrate, a first IDT electrode on the dielectric layer, a second IDT electrode positioned on the piezoelectric substrate in an area where the dielectric layer is not provided such that the first and second IDT electrodes are side by side in an acoustic wave propagation direction extending along a principal surface of the piezoelectric substrate, a first reflector on the dielectric layer and adjacent to the first IDT electrode on a side of the second IDT electrode, and a second reflector on the piezoelectric substrate and adjacent to the second IDT electrode on a side of the first IDT electrode. The dielectric layer includes an edge portion between the first and second reflectors in planar view seen from a stacking direction of the piezoelectric substrate and the dielectric layer.

An elastic wave filter includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a first shield electrode provided on the piezoelectric substrate, a first insulating film laminated on the piezoelectric substrate and extending onto the first shield electrode, a first signal terminal provided on the first insulating film, a second signal terminal provided on the piezoelectric substrate, and a first ground terminal provided on the piezoelectric substrate and connected to a ground potential. The first shield electrode is not electrically connected to the IDT electrode and the first and second signal terminals. The first signal terminal is included in the first shield electrode when seen from above. One of the first signal terminal and the second signal terminal is an output terminal and the other thereof is an input terminal.

Various arrangements for electrically coupling the electrodes of coupled resonator structures (CRSes) to form unique two- and three-terminal devices as well as the use of such CRSes in filter networks are disclosed.

An acoustic wave filter device includes a substrate, first and second acoustic impedance layers, a piezoelectric layer, first and second interdigital transducer electrodes, an input terminal, an output terminal, ground terminals, a series arm circuit, and a parallel arm circuits. The first interdigital transducer electrode at least partially overlaps the first acoustic impedance layer in the plan view. The second interdigital transducer electrode at least partially overlaps the second acoustic impedance layer in the plan view. The series arm circuit is provided on a first path connecting the input terminal and the output terminal and includes the first and second interdigital transducer electrodes. A conductive layer in the first acoustic impedance layer and a conductive layer in the second acoustic impedance layer are electrically insulated from each other.

In an elastic wave device, a first electrode structure and a second electrode structure are provided on a piezoelectric substrate, first and second elastic wave element portions are configured by the first electrode structure and the second electrode structure, respectively, and a first bump that is configured of a conductive material to provide shielding is provided on an electrode formation surface of the piezoelectric substrate between the first elastic wave element portion and the second elastic wave element portion.

A packaged acoustic wave component has a device substrate and a metal layer disposed over the device substrate. An acoustic wave device is disposed over at least a portion of the metal layer so that the metal layer is interposed between the device substrate and at least a portion of the acoustic wave device. A cap substrate is spaced above the device substrate, and peripheral wall that is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the acoustic wave device. One or more vias extend through the device substrate and are disposed under the metal layer.

A method of forming an acoustic wave device is disclosed. The method can include providing a structure having a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first portion and the second portion, a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion, a first interdigital transducer electrode on the first portion of the piezoelectric layer, and a second interdigital transducer electrode on the second portion of the piezoelectric layer. the method can also include etching at least a portion of the piezoelectric layer such that a region over the third substrate portion is free from the piezoelectric layer.

An acoustic wave device is disclosed. The acoustic wave device can include a support substrate that includes a first substrate portion, a second substrate portion, and a third substrate portion between the first substrate portion and the second substrate portion. The acoustic wave device can include a piezoelectric layer that includes a first portion over the first substrate portion and a second portion over the second substrate portion. The piezoelectric layer can be arranged such that a region over the third substrate portion is free from the piezoelectric layer. The acoustic wave device can include a filter circuit formed on the first portion of the piezoelectric layer. The acoustic wave device can include a cancelation circuit on the second portion of the piezoelectric layer.