A method of making a micro-module structure comprises providing a substrate, the substrate having a substrate surface and comprising a substrate post protruding from the substrate surface. A component is disposed on the substrate post, the component having a component top side and a component bottom side opposite the component top side, the component bottom side disposed on the substrate post. The component extends over at least one edge of the substrate post. One or more component electrodes are disposed on the component.

A solidly mounted resonator having an electromagnetic shielding structure and a method for manufacturing the same. The solidly mounted resonator includes: a substrate; an acoustic-wave reflecting layer formed on the substrate; a resonance function layer formed on the acoustic-wave reflecting layer; and a metal shielding wall formed on the substrate, wherein the metal shielding wall surrounds an effective region in the acoustic-wave reflecting layer and the resonance function layer. The electromagnetic shielding structure is formed simultaneously with the resonator, and it is not necessary to provide an additional electromagnetic shielding device. An influence of an external or internal electromagnetic interference source on the resonator is avoided while ensuring a small dimension and a high performance of the resonator.

Embodiments of this disclosure relate to bulk acoustic wave resonators on a substrate. The bulk acoustic wave resonators include a first bulk acoustic wave resonator, a second bulk acoustic wave resonator, a conductor electrically connecting the first bulk acoustic wave resonator to the second bulk acoustic wave resonator, and an air gap positioned between the conductor and a surface of the substrate.

A bulk acoustic wave resonator having a central region, an outer region, and a raised frame region between the central region and the outer region is disclosed. The bulk acoustic wave resonator can include a piezoelectric layer and a top electrode over the piezoelectric layer. The top electrode is disposed at least in the central region, the outer region, and the raised frame region, the top electrode including a first layer and a second layer. A material of the first layer is different from the material of the second layer.

Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.

An elastic wave device includes a piezoelectric layer including a first main surface and a second main surface facing the first main surface, an acoustically reflective layer stacked on the first main surface of the piezoelectric layer, an excitation electrode disposed on the piezoelectric layer, and a support layer. The acoustically reflective layer overlaps at least the excitation electrode in a plan view of the piezoelectric layer from the side of the second main surface. The support layer surrounds the acoustically reflective layer in a plan view of the piezoelectric layer from the side of the second main surface.

A piezoelectric component in which leakage of vibration is suppressed and vibration characteristics are excellent is provided. A piezoelectric component of the invention includes a support substrate; and a piezoelectric element mounted on the support substrate. The piezoelectric element includes electrodes (vibration electrodes) on one main surface and the other main surface of the piezoelectric element so that the electrodes have an area facing each other, and a concave area extending in a width direction of the piezoelectric element, in at least one of excepted areas which are areas other than the electrodes facing each other of the one main surface and the other main surface. At least part of corner portions of the concave area which extend in the width direction forms a curved surface.

Aspects of this disclosure relate to a bulk acoustic wave device with a floating raised frame structure. The bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and a floating raised frame structure positioned on a same side of the piezoelectric layer as the first electrode and spaced apart from the first electrode. The floating raised frame structure is at a floating potential. The bulk acoustic wave device can suppress a raised frame mode. Related methods, filters, multiplexers, radio frequency front ends, radio frequency modules, and wireless communication devices are disclosed.

Certain aspects of the present disclosure provide a filter circuit and techniques for filtering using the filter circuit. The filter circuit generally includes a first filter stage having a first acoustic wave resonator coupled in a series path between a first port of the filter circuit and a second port of the filter circuit, a first inductor-capacitor (LC) tank circuit, a first capacitor coupled between a first terminal of the first acoustic wave resonator and the first LC tank circuit, the first LC tank circuit being coupled between the first capacitor and a reference potential node, and a second capacitor coupled between a second terminal of the first acoustic wave resonator and the first LC tank circuit. In some aspects, the filter circuit includes one or more other filter stages coupled to the first filter stage.

A micro-transfer printable transverse bulk acoustic wave filter comprises a piezoelectric filter element having a top side, a bottom side, a left side, and a right side disposed over a sacrificial portion on a source substrate. A top electrode is in contact with the top side and a bottom electrode is in contact with the bottom side. A left acoustic mirror is in contact with the left side and a right acoustic mirror is in contact with the right side. The thickness of the transverse bulk acoustic wave filter is substantially less than its length or width and its length can be greater than its width. The transverse bulk acoustic wave filter can be disposed on, and electrically connected to, a semiconductor substrate comprising an electronic circuit to control the transverse bulk acoustic wave filter and form a composite heterogeneous device that can be micro-transfer printed.