A semiconductor device and a method of manufacturing a semiconductor device are provided. The semiconductor device includes a carrier, an element, and a first electronic component. The element is disposed on the carrier. The first electronic component is disposed above the element. The element is configured to adjust a first bandwidth of a first signal transmitted from the first electronic component.

A circuit device includes a first terminal, a first oscillation circuit oscillating a resonator and generating a first voltage for automatic gain control for controlling amplitude of a signal output from the resonator, a digital signal generation circuit generating a digital signal corresponding to the first voltage, and a first interface circuit outputting the digital signal to the first terminal.

A fabrication method of a surface acoustic wave (SAW) filter includes obtaining a piezoelectric substrate, forming a first interdigital transducer (IDT) on a first portion of the piezoelectric substrate, forming a first pad metal layer on the first IDT, forming a first dielectric layer on the first portion of the piezoelectric substrate, covering the first IDT and the first pad metal layer, forming a trench in the first dielectric layer, forming a second dielectric layer on the first dielectric layer, forming a third dielectric layer on the second dielectric layer, removing a second portion of the piezoelectric substrate to obtain a piezoelectric layer, forming a second IDT on the piezoelectric layer, and etching and releasing a portion of the first dielectric layer surrounded by the trench to form a cavity.

A method of manufacturing a packaged surface acoustic wave filter chip is disclosed. The method can include providing a structure having first interdigital transducer electrodes formed with a first piezoelectric layer, second interdigital transducer electrodes formed with a second piezoelectric layer, and a substrate between the first and second piezoelectric layers. The method can include forming a plurality of through electrodes extending at least partially through a thickness of the structure such that a first set of through electrodes of the plurality of through electrodes are electrically connected to the first interdigital transducer electrodes and a second set of through electrodes of the plurality of through electrodes are electrically isolated from the first interdigital transducer electrodes.

An electronic component package includes a lid, a first layer, a second layer disposed between the first layer and the lid and configuring a first frame, a third layer disposed between the second layer and the lid and configuring a second frame, a bonding member bonding the third layer to the lid, and a via wire electrically coupled to the lid and penetrating the second frame, in which, when an inner diameter of a first corner portion of the first frame is denoted by R1 and an inner diameter of a second corner portion of the second frame overlapping the first corner portion in a plan view is denoted by R2, R1<R2, and an inner surface of the second corner portion protrudes more than an inner surface of the first corner portion in a cross-sectional view.

An electronic component includes a support member, a piezoelectric film, and an interdigital transducer. The support member includes silicon as a primary component. The piezoelectric film is provided directly or indirectly on the support member. The interdigital transducer includes a plurality of electrode fingers. The plurality of electrode fingers are provided side by side separately from each other. The interdigital transducer is provided on the principal surface of the piezoelectric film. The film thickness of the piezoelectric film is about 3.5 λ or less, where λ denotes the wavelength of an acoustic wave determined by the electrode finger pitch of the interdigital transducer. In the support member, the high-impurity-concentration region is further from the piezoelectric film than the low-impurity-concentration region.

A resonator element includes: a substrate; and an electrode that includes a first conductive layer provided on a surface of the substrate, and a second conductive layer, provided on the opposite side to the first conductive layer on the substrate side, which is disposed within an outer edge of the first conductive layer when seen in a plan view from a direction perpendicular to the surface.

A resonator device includes: a resonator element; a heat generating unit; a first package including a first base at which the resonator element and the heat generating unit are disposed, and a first lid bonded to the first base so as to accommodate the resonator element between the first lid and the first base; and a low emissivity layer that is disposed at an inner surface of the first lid and that has an emissivity lower than an emissivity of the first lid. In addition, a constituent material of the first lid is silicon, and the emissivity of the low emissivity layer at room temperature is less than 0.5.

A radio-frequency module includes a mount board, an acoustic wave filter, a metal block, a resin layer, and a shield layer. The mount board has a first principal surface and a second principal surface opposite to each other, and has a ground layer. The acoustic wave filter is mounted on the first principal surface of the mount board. The metal block is disposed on the first principal surface of the mount board, and is connected to the ground layer. The resin layer is disposed on the first principal surface of the mount board, and covers the periphery of the acoustic wave filter and the periphery of the metal block. The shield layer covers the principal surface, which is on the opposite side to the mount board side, of the acoustic wave filter, the resin layer, and the metal block. The metal block is in contact with the shield layer.

Heat dissipating characteristics of an acoustic wave filter is improved. A high frequency module includes a mounting substrate, an acoustic wave filter, a resin layer, and a shield layer. The mounting substrate has a first main surface and a second main surface that face each other. The acoustic wave filter is arranged near the first main surface of the mounting substrate. The resin layer is arranged on the first main surface of the mounting substrate and covers an outer peripheral surface of the acoustic wave filter. The shield layer covers the resin layer and the acoustic wave filter. The shield layer is in contact with a second main surface of the acoustic wave filter that is far from the mounting substrate.